The Leptogenys Roger, 1861 (Formicidae, Ponerinae) of Hong Kong SAR with additional records from Guangdong, China.

Leptogenys is the most diverse genus of the ant subfamily Ponerinae and is widely distributed across the world's tropical and subtropical regions. More than 40 species are known from the Oriental realm displaying a wide range of ecologies, although their life history traits remain poorly understood, and new species are frequently discovered. Here, a faunal review of the genus from Hong Kong SAR, southern China is provided. A total of nine species are recorded, with one new species, Leptogenysgrohli Hamer, Lee & Guénard, sp. nov. described. Ecological and biogeographic information, including new information on reproductive modes for two species are provided with the ergatoids of L.binghamii Forel, 1900 and L.rufidaZhou et al., 2012 described. Additional records for five of these species within the neighbouring province of Guangdong are also provided. Finally, an illustrated key to species known from Hong Kong is presented, as well as notes on each species' distribution, ecology, and behaviour. An updated provincial distributional checklist of the Leptogenys species of Mainland China and Taiwan is also supplied.

Tunnel junctions based on interfacial two dimensional ferroelectrics.

Van der Waals heterostructures have opened new opportunities to develop atomically thin (opto)electronic devices with a wide range of functionalities. The recent focus on manipulating the interlayer twist angle has led to the observation of out-of-plane room temperature ferroelectricity in twisted rhombohedral bilayers of transition metal dichalcogenides. Here we explore the switching behaviour of sliding ferroelectricity using scanning probe microscopy domain mapping and tunnelling transport measurements. We observe well-pronounced ambipolar switching behaviour in ferroelectric tunnelling junctions with composite ferroelectric/non-polar insulator barriers and support our experimental results with complementary theoretical modelling. Furthermore, we show that the switching behaviour is strongly influenced by the underlying domain structure, allowing the fabrication of diverse ferroelectric tunnelling junction devices with various functionalities. We show that to observe the polarisation reversal, at least one partial dislocation must be present in the device area. This behaviour is drastically different from that of conventional ferroelectric materials, and its understanding is an important milestone for the future development of optoelectronic devices based on sliding ferroelectricity.

Strumigenys emmae (Emery, 1890) (Myrmicinae) new to Britain, with an updated key to the known Strumigenys of the West Palaearctic.

The ant genus Strumigenys is a hyper diverse pantropical group of specialised predatory leaf litter dwelling ants. Species richness peaks within tropics, with few species extending into the West Palaearctic realm. A significant proportion of Strumigenys species known from the West Palaearctic are non-native, spread via human commerce, and predominately establishing populations within artificially heated greenhouses. In Britain, two Strumigenys species were previously known, S. rogeri Emery, 1890 and S. perplexa (Smith, 1876). Here we add a third species, S. emmae (Emery, 1890) based upon specimens from the humid tropical biomes at the Eden Project, Cornwall (UK). A single record outlined here is noted as the earliest known record of S. emmae from Europe thus far, pre-dating previous records by four years. We provide high resolution images, measurements, and discussion on the ecology of the species. In addition, an updated key to the Strumigenys of the Europe is supplied.

A checklist of Nylanderia (Hymenoptera: Formicidae: Formicinae) from Hong Kong and Macao SARs, with an illustrated identification key for species in Southeast China and Taiwan.

Species of the ant genus Nylanderia constitute some of the most common ground dwelling Formicinae in tropical and subtropical areas. The genus includes numerous species introduced into new regions, especially within urban or disturbed environments. Here, we review the Nylanderia species found within Hong Kong and Macao, which are both highly urbanized regions and of critical importance to Southern China's policy-makers and non-governmental actors concerned with the regional spread of non-native species. A total of 11 species and 2 morphospecies are recorded in Hong Kong and 6 species and 2 morphospecies are recorded in Macao. We also provide a list of new records for the genus in Hong Kong and Macao, along with taxonomic accounts for all the species recorded. Additionally, the present work provides an illustrated identification key for the species of Nylanderia occurring in Southeast Mainland China and Taiwan. We briefly discuss the possible biogeographical implications of our findings, providing additional support to the exotic status of N. bourbonica in continental Southeast Asia. Lastly, we give our perspective on the ramifications of local inaccessibility to type specimens to current taxonomic practices.

Interfacial ferroelectricity in marginally twisted 2D semiconductors.

Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of new metamaterials. Here we demonstrate a room temperature ferroelectric semiconductor that is assembled using mono- or few-layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crystals, enables ferroelectric domains with alternating out-of-plane polarization arranged into a twist-controlled network. The last can be moved by applying out-of-plane electrical fields, as visualized in situ using channelling contrast electron microscopy. The observed interfacial charge transfer, movement of domain walls and their bending rigidity agree well with theoretical calculations. Furthermore, we demonstrate proof-of-principle field-effect transistors, where the channel resistance exhibits a pronounced hysteresis governed by pinning of ferroelectric domain walls. Our results show a potential avenue towards room temperature electronic and optoelectronic semiconductor devices with built-in ferroelectric memory functions.

Moiré Superlattice Effects and Band Structure Evolution in Near-30-Degree Twisted Bilayer Graphene.

In stacks of two-dimensional crystals, mismatch of their lattice constants and misalignment of crystallographic axes lead to formation of moiré patterns. We show that moiré superlattice effects persist in twisted bilayer graphene (tBLG) with large twists and short moiré periods. Using angle-resolved photoemission, we observe dramatic changes in valence band topology across large regions of the Brillouin zone, including the vicinity of the saddle point at M and across 3 eV from the Dirac points. In this energy range, we resolve several moiré minibands and detect signatures of secondary Dirac points in the reconstructed dispersions. For twists θ > 21.8°, the low-energy minigaps are not due to cone anticrossing as is the case at smaller twist angles but rather due to moiré scattering of electrons in one graphene layer on the potential of the other which generates intervalley coupling. Our work demonstrates the robustness of the mechanisms which enable engineering of electronic dispersions of stacks of two-dimensional crystals by tuning the interface twist angles. It also shows that large-angle tBLG hosts electronic minigaps and van Hove singularities of different origin which, given recent progress in extreme doping of graphene, could be explored experimentally.

Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers.

III-VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy. We present the N-dependence of both intralayer vibrations within each atomic layer, as well as of the interlayer shear and layer breathing modes. A linear chain model can be used to describe the evolution of the peak positions as a function of N, consistent with first principles calculations.

Strongly Absorbing Nanoscale Infrared Domains within Strained Bubbles at hBN-Graphene Interfaces.

Graphene has great potential for use in infrared (IR) nanodevices. At these length scales, nanoscale features, and their interaction with light, can be expected to play a significant role in device performance. Bubbles in van der Waals heterostructures are one such feature, which have recently attracted considerable attention, thanks to their ability to modify the optoelectronic properties of two-dimensional (2D) materials through strain. Here, we use scattering-type scanning near-field optical microscopy (sSNOM) to measure the nanoscale IR response from a network of variously shaped bubbles in hexagonal boron nitride (hBN)-encapsulated graphene. We show that within individual bubbles there are distinct domains with strongly enhanced IR absorption. The IR domain boundaries coincide with ridges in the bubbles, which leads us to attribute them to nanoscale strain domains. We further validate the strain distribution in the graphene by means of confocal Raman microscopy and vector decomposition analysis. This shows intricate and varied strain configurations, in which bubbles of different shape induce more bi- or uniaxial strain configurations. This reveals pathways toward future strain-based graphene IR devices.

Atomic Resolution Imaging of CrBr3 Using Adhesion-Enhanced Grids.

Suspended specimens of 2D crystals and their heterostructures are required for a range of studies including transmission electron microscopy (TEM), optical transmission experiments, and nanomechanical testing. However, investigating the properties of laterally small 2D crystal specimens, including twisted bilayers and air-sensitive materials, has been held back by the difficulty of fabricating the necessary clean suspended samples. Here we present a scalable solution that allows clean free-standing specimens to be realized with 100% yield by dry-stamping atomically thin 2D stacks onto a specially developed adhesion-enhanced support grid. Using this new capability, we demonstrate atomic resolution imaging of defect structures in atomically thin CrBr3, a novel magnetic material that degrades in ambient conditions.

Enhanced Superconductivity in Few-Layer TaS2 due to Healing by Oxygenation.

When approaching the atomically thin limit, defects and disorder play an increasingly important role in the properties of two-dimensional (2D) materials. While defects are generally thought to negatively affect superconductivity in 2D materials, here we demonstrate the contrary in the case of oxygenation of ultrathin tantalum disulfide (TaS2). Our first-principles calculations show that incorporation of oxygen into the TaS2 crystal lattice is energetically favorable and effectively heals sulfur vacancies typically present in these crystals, thus restoring the electronic band structure and the carrier density to the intrinsic characteristics of TaS2. Strikingly, this leads to a strong enhancement of the electron-phonon coupling, by up to 80% in the highly oxygenated limit. Using transport measurements on fresh and aged (oxygenated) few-layer TaS2, we found a marked increase of the superconducting critical temperature (Tc) upon aging, in agreement with our theory, while concurrent electron microscopy and electron-energy loss spectroscopy confirmed the presence of sulfur vacancies in freshly prepared TaS2 and incorporation of oxygen into the crystal lattice with time. Our work thus reveals the mechanism by which certain atomic-scale defects can be beneficial to superconductivity and opens a new route to engineer Tc in ultrathin materials.

Ultra-thin van der Waals crystals as semiconductor quantum wells.

Control over the quantization of electrons in quantum wells is at the heart of the functioning of modern advanced electronics; high electron mobility transistors, semiconductor and Capasso terahertz lasers, and many others. However, this avenue has not been explored in the case of 2D materials. Here we apply this concept to van der Waals heterostructures using the thickness of exfoliated crystals to control the quantum well dimensions in few-layer semiconductor InSe. This approach realizes precise control over the energy of the subbands and their uniformity guarantees extremely high quality electronic transport in these systems. Using tunnelling and light emitting devices, we reveal the full subband structure by studying resonance features in the tunnelling current, photoabsorption and light emission spectra. In the future, these systems could enable development of elementary blocks for atomically thin infrared and THz light sources based on intersubband optical transitions in few-layer van der Waals materials.

Author Correction: Resonantly hybridized excitons in moiré superlattices in van der Waals heterostructures.

An Amendment to this paper has been published and can be accessed via a link at the top of the paper.

Formation and Healing of Defects in Atomically Thin GaSe and InSe.

Two dimensional III-VI metal monochalcogenide materials, such as GaSe and InSe, are attracting considerable attention due to their promising electronic and optoelectronic properties. Here, an investigation of point and extended atomic defects formed in mono-, bi-, and few-layer GaSe and InSe crystals is presented. Using state-of-the-art scanning transmission electron microscopy, it is observed that these materials can form both metal and selenium vacancies under the action of the electron beam. Selenium vacancies are observed to be healable: recovering the perfect lattice structure in the presence of selenium or enabling incorporation of dopant atoms in the presence of impurities. Under prolonged imaging, multiple point defects are observed to coalesce to form extended defect structures, with GaSe generally developing trigonal defects and InSe primarily forming line defects. These insights into atomic behavior could be harnessed to synthesize and tune the properties of 2D post-transition-metal monochalcogenide materials for optoelectronic applications.

Resonantly hybridized excitons in moiré superlattices in van der Waals heterostructures.

Atomically thin layers of two-dimensional materials can be assembled in vertical stacks that are held together by relatively weak van der Waals forces, enabling coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation1,2. Consequently, an overarching periodicity emerges in the local atomic registry of the constituent crystal structures, which is known as a moiré superlattice3. In graphene/hexagonal boron nitride structures4, the presence of a moiré superlattice can lead to the observation of electronic minibands5-7, whereas in twisted graphene bilayers its effects are enhanced by interlayer resonant conditions, resulting in a superconductor-insulator transition at magic twist angles8. Here, using semiconducting heterostructures assembled from incommensurate molybdenum diselenide (MoSe2) and tungsten disulfide (WS2) monolayers, we demonstrate that excitonic bands can hybridize, resulting in a resonant enhancement of moiré superlattice effects. MoSe2 and WS2 were chosen for the near-degeneracy of their conduction-band edges, in order to promote the hybridization of intra- and interlayer excitons. Hybridization manifests through a pronounced exciton energy shift as a periodic function of the interlayer rotation angle, which occurs as hybridized excitons are formed by holes that reside in MoSe2 binding to a twist-dependent superposition of electron states in the adjacent monolayers. For heterostructures in which the monolayer pairs are nearly aligned, resonant mixing of the electron states leads to pronounced effects of the geometrical moiré pattern of the heterostructure on the dispersion and optical spectra of the hybridized excitons. Our findings underpin strategies for band-structure engineering in semiconductor devices based on van der Waals heterostructures9.

Indirect to Direct Gap Crossover in Two-Dimensional InSe Revealed by Angle-Resolved Photoemission Spectroscopy.

Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductors that feature a strong variation of their band gap as a function of the number of layers in the crystal and, specifically for InSe, an expected crossover from a direct gap in the bulk to a weakly indirect band gap in monolayers and bilayers. Here, we apply angle-resolved photoemission spectroscopy with submicrometer spatial resolution (µARPES) to visualize the layer-dependent valence band structure of mechanically exfoliated crystals of InSe. We show that for one-layer and two-layer InSe the valence band maxima are away from the Γ-point, forming an indirect gap, with the conduction band edge known to be at the Γ-point. In contrast, for six or more layers the band gap becomes direct, in good agreement with theoretical predictions. The high-quality monolayer and bilayer samples enable us to resolve, in the photoluminescence spectra, the band-edge exciton (A) from the exciton (B) involving holes in a pair of deeper valence bands, degenerate at Γ, with a splitting that agrees with both µARPES data and the results of DFT modeling. Due to the difference in symmetry between these two valence bands, light emitted by the A-exciton should be predominantly polarized perpendicular to the plane of the two-dimensional crystal, which we have verified for few-layer InSe crystals.

Scalable Patterning of Encapsulated Black Phosphorus.

Atomically thin black phosphorus (BP) has attracted considerable interest due to its unique properties, such as an infrared band gap that depends on the number of layers and excellent electronic transport characteristics. This material is known to be sensitive to light and oxygen and degrades in air unless protected with an encapsulation barrier, limiting its exploitation in electrical devices. We present a new scalable technique for nanopatterning few layered BP by direct electron beam exposure of encapsulated crystals, achieving a spatial resolution down to 6 nm. By encapsulating the BP with single layer graphene or hexagonal boron nitride (hBN), we show that a focused electron probe can be used to produce controllable local oxidation of BP through nanometre size defects created in the encapsulation layer by the electron impact. We have tested the approach in the scanning transmission electron microscope (STEM) and using industry standard electron beam lithography (EBL). Etched regions of the BP are stabilized by a thin passivation layer and demonstrate typical insulating behavior as measured at 300 and 4.3 K. This new scalable approach to nanopatterning of thin air sensitive crystals has the potential to facilitate their wider use for a variety of sensing and electronics applications.

Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures.

Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications.

Nanometer Resolution Elemental Mapping in Graphene-Based TEM Liquid Cells.

We demonstrate a new design of graphene liquid cell consisting of a thin lithographically patterned hexagonal boron nitride crystal encapsulated on both sides with graphene windows. The ultrathin window liquid cells produced have precisely controlled volumes and thicknesses and are robust to repeated vacuum cycling. This technology enables exciting new opportunities for liquid cell studies, providing a reliable platform for high resolution transmission electron microscope imaging and spectral mapping. The presence of water was confirmed using electron energy loss spectroscopy (EELS) via the detection of the oxygen K-edge and measuring the thickness of full and empty cells. We demonstrate the imaging capabilities of these liquid cells by tracking the dynamic motion and interactions of small metal nanoparticles with diameters of 0.5-5 nm. We further present an order of magnitude improvement in the analytical capabilities compared to previous liquid cell data with 1 nm spatial resolution elemental mapping achievable for liquid encapsulated bimetallic nanoparticles using energy dispersive X-ray spectroscopy (EDXS).

Observing Imperfection in Atomic Interfaces for van der Waals Heterostructures.

Vertically stacked van der Waals heterostructures are a lucrative platform for exploring the rich electronic and optoelectronic phenomena in two-dimensional materials. Their performance will be strongly affected by impurities and defects at the interfaces. Here we present the first systematic study of interfaces in van der Waals heterostructure using cross-sectional scanning transmission electron microscope (STEM) imaging. By measuring interlayer separations and comparing these to density functional theory (DFT) calculations we find that pristine interfaces exist between hBN and MoS2 or WS2 for stacks prepared by mechanical exfoliation in air. However, for two technologically important transition metal dichalcogenide (TMDC) systems, MoSe2 and WSe2, our measurement of interlayer separations provide the first evidence for impurity species being trapped at buried interfaces with hBN interfaces that are flat at the nanometer length scale. While decreasing the thickness of encapsulated WSe2 from bulk to monolayer we see a systematic increase in the interlayer separation. We attribute these differences to the thinnest TMDC flakes being flexible and hence able to deform mechanically around a sparse population of protruding interfacial impurities. We show that the air sensitive two-dimensional (2D) crystal NbSe2 can be fabricated into heterostructures with pristine interfaces by processing in an inert-gas environment. Finally we find that adopting glovebox transfer significantly improves the quality of interfaces for WSe2 compared to processing in air.