Actively tunable THz filter based on an electromagnetically induced transparency analog hybridized with a MEMS metamaterial.

Electromagnetically induced transparency (EIT) analogs in classical oscillator systems have been investigated due to their potential in optical applications such as nonlinear devices and the slow-light field. Metamaterials are good candidates that utilize EIT-like effects to regulate optical light. Here, an actively reconfigurable EIT metamaterial for controlling THz waves, which consists of a movable bar and a fixed wire pair, is numerically and experimentally proposed. By changing the distance between the bar and wire pair through microelectromechanical system (MEMS) technology, the metamaterial can controllably regulate the EIT behavior to manipulate the waves around 1.832 THz, serving as a dynamic filter. A high transmittance modulation rate of 38.8% is obtained by applying a drive voltage to the MEMS actuator. The dispersion properties and polarization of the metamaterial are also investigated. Since this filter is readily miniaturized and integrated by taking advantage of MEMS, it is expected to significantly promote the development of THz-related practical applications such as THz biological detection and THz communications.

Surface-plasmon-coupled optical force sensors based on metal-insulator-metal metamaterials with movable air gap.

We proposed surface-plasmon-coupled optical force sensors based on metal-insulator-metal (MIM) metamaterials with a movable air gap as an insulator layer. The MIM metamaterial was composed of an air gap sandwiched by a metal nanodot array and a metal diaphragm, the resonant wavelength of which was red-shifted when the air gap was narrowed by applying a normal force. We designed and fabricated a prototype of the proposed sensor and confirmed that the MIM metamaterial could be used as a force sensor with larger sensitivity than a force sensor based on Fabry-Pérot interferometer (FPI).

MEMS-based wearable eyeglasses for eye health monitoring.

A large number of world population suffer from vision related diseases/defects. Visual health supervision is important for detection, prevention and treatment of eyes disorders. Images of retina/fundus are important for diagnosis of eye diseases. In this paper we report on design and development of a wearable eyeglass type retinal imaging system using a 2D MEMS scanner for ocular health monitoring. Several wearability criteria for instance weight and size factor should be taken into account while designing a wearable health monitoring system. The 2D-MEMS scanner used in the system is small in size, that helps to fabricate an easy to use and lightweight wearable imaging device. The net weight of fabricated system including optical components is 150 g. Sensitivity of the system was estimated by measuring the signal-to-noise ratio for high and low reflectance materials. Signal-to-noise ratio was 7 for high reflectance material and about 4 for biological samples. Imaging results were obtained by scanning a model eye, ham slice and enucleated swine eye in real time by custom made LabVIEW program. The fabricated system has adequate sensitivity and resolution for the observation of retinal arteries and optic disc for detection of eye diseases.

Miniature Spectroscopes with Two-Dimensional Guided-Mode Resonant Metal Grating Filters Integrated on a Photodiode Array.

A small spectroscope with 25 color sensors was fabricated by combining metamaterial color filters and Si photodiodes. The metamaterial color filters consisted of guided-mode resonant metal gratings with subwavelength two-dimensional periodic structures. Transmittance characteristics of the color filters were designed to obtain peak wavelengths proportional to grating periods. For each color sensor, a peak wavelength of the spectral sensitivity could be tuned in the range of visible wavelengths by adjusting each grating period. By performing spectrum reconstruction using Tikhonov regularization, the spectrum of an incident light was obtained from the signal of photodiodes. Several monochromatic lights were made incident on the fabricated device and the spectral characteristics of the incident light were reconstructed from the output signals obtained from the respective color sensors. The peak wavelengths of the reconstructed spectra were in good agreement with the center wavelengths of the monochromatic lights.

GaN microring waveguide resonators bonded to silicon substrate by a two-step polymer process.

Using a polymer bonding technique, GaN microring waveguide resonators were fabricated on a Si substrate for future hybrid integration of GaN and Si photonic devices. The designed GaN microring consisted of a rib waveguide having a core of 510 nm in thickness, 1000 nm in width, and a clad of 240 nm in thickness. A GaN crystalline layer of 1000 nm in thickness was grown on a Si(111) substrate by metal organic chemical vapor deposition using a buffer layer of 300 nm in thickness for the compensation of lattice constant mismatch between GaN and Si crystals. The GaN/Si wafer was bonded to a Si(100) wafer by a two-step polymer process to prevent it from trapping air bubbles. The bonded GaN layer was thinned from the backside by a fast atom beam etching to remove the buffer layer and to generate the rib waveguides. The transmission characteristics of the GaN microring waveguide resonators were measured. The losses of the straight waveguides were measured to be 4.0±1.7 dB/mm around a wavelength of 1.55 µm. The microring radii ranged from 30 to 60 µm, where the measured free-spectral ranges varied from 2.58 to 5.30 nm. The quality factors of the microring waveguide resonators were from 1710 to 2820.

Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE.

Structure shift of GaN nanowall network, nanocolumn, and compact film were successfully obtained on Si (111) by plasma-assisted molecular beam epitaxy (MBE). As is expected, growth of the GaN nanocolumns was observed in N-rich condition on bare Si, and the growth shifted to compact film when the Ga flux was improved. Interestingly, if an aluminum (Al) pre-deposition for 40 s was carried out prior to the GaN growth, GaN grows in the form of the nanowall network. Results show that the pre-deposited Al exits in the form of droplets with typical diameter and height of ~ 80 and ~ 6.7 nm, respectively. A growth model for the nanowall network is proposed and the growth mechanism is discussed. GaN grows in the area without Al droplets while the growth above Al droplets is hindered, resulting in the formation of continuous GaN nanowall network that removes the obstacles of nano-device fabrication.

Silicon photonic microelectromechanical switch using lateral adiabatic waveguide couplers.

A silicon photonic waveguide switch using adiabatic couplers with lateral comb-drive actuators is designed, fabricated, and tested for microelectromechanical optical matrix switch. One of the waveguides of the adiabatic coupler is moved laterally by three actuators for varying the coupler gap, which enables to switch the path of the waveguides. The coupler waveguides with 250 nm thickness consist of a movable tapered waveguide from 400 nm to 500 nm in width and 50 µm in length and a straight waveguide of 400 nm in width. The three actuators are ultra-small electrostatic comb-drive and move the two movable tapered waveguides. The switch's transmission characteristics were measured as a function of the coupler gap. Around a coupler gap of 109 nm, the port isolation of 16.7 dB was obtained. The switch's insertion loss was roughly estimated to be less than 1 dB. The switching time was 36.7 µsec under the present experimental condition. Moreover, 64 switches were arrayed in a 125 µm period square mash waveguide and an 8 x 8 matrix switch was composed. The matrix switch was also tested.

Confocal laser displacement sensor using a micro-machined varifocal mirror.

A confocal laser displacement sensor using a micro-machined varifocal mirror is reported. The focal length modulation is a key function of the confocal sensor. The mechanism of the focal length modulation determines the measurement speed and range. Here, we propose application of the micro-machined varifocal mirror for the modulation. The varifocal mirror can realize faster modulation, small size, and low energy consumption for the confocal displacement sensor. The electrostatically actuated varifocal mirror made by single crystalline silicon is used. The working distance of the sensor is designed to be 31 mm. The actuating range at 7 kHz is 310 µm. The linearity error in the actuating range is from -1.1% to 1.2%.

Scanning Micro-Mirror with an Electrostatic Spring for Compensation of Hard-Spring Nonlinearity.

A scanning micro-mirror operated at the mechanical resonant frequency often suffer nonlinearity of the torsion-bar spring. The torsion-bar spring becomes harder than the linear spring with the increase of the rotation angle (hard-spring effect). The hard-spring effect of the torsion-bar spring generates several problems, such as hysteresis, frequency shift, and instability by oscillation jump. In this paper, a scanning micro-mirror with an electrostatic-comb spring is studied for compensation of the hard-spring effect of the torsion-bar spring. The hard-spring effect of the torsion-bar spring is compensated with the equivalent soft-spring effect of the electrostatic-comb spring. The oscillation curve becomes symmetric at the resonant frequency although the resonant frequency increases. Theoretical analysis is given for roughly explaining the compensation. A 0.5 mm square scanning micro-mirror having two kinds of combs, i.e., an actuator comb and a compensation comb, is fabricated from a silicon-on-insulator wafer for testing the compensation of the hard-spring in a vacuum and in atmospheric air. The bending of the oscillation curve is compensated by applying a DC voltage to the electrostatic-comb spring in vacuum and atmosphere. The compensation is attributed by theoretical approach to the soft-spring effect of the electrostatic-comb spring.

25 nm Single-Crystal Silicon Nanowires Fabricated by Anisotropic Wet Etching.

We report a top-down method for fabricating ultra-high aspect ratio single-crystal silicon nanowires. The fabrication method is based on the standard photolithography technique and anisotropic wet etching of the single-crystal silicon in KOH solution. SiO2 mask nanolines used for patterning single-crystal silicon nanowires are formed by the undercut etching of thin SiO2 layer in buffered hydrofluoric solution. The minimum width of the SiO2 mask nanolines are 50 nm. The length of SiO2 mask nanolines is 2 cm. The single-crystal silicon nanowires have been successfully transferred from the SiO2 mask nanolines by KOH anisotropic wet-chemical etching. The minimum width of the silicon nanowire has obtained to be 25 nm. The fabricated single-crystal silicon nanowires have trapezoidal and triangular cross sections, which are useful for applications in nanoelectronic and nanophotonic elements.

Demonstration of sharp multiple Fano resonances in optical metamaterials.

We experimentally demonstrated multiple Fano resonances in optical metamaterials. By combination of two different sized asymmetric-double-bar (ADB) structures, triple Fano resonance was observed in the near-infrared region. In addition to Fano resonance due to anti-phase modes in isolated ADB structures, an anti-phase mode due to coupling among different sized ADBs was observed. Dependence of characteristics of resonances on size difference was also investigated. At specific conditions of size difference, quality factors of three Fano resonances were improved compared with ADB metamaterials consisting of one kind of ADBs. The results will help to realize applications using metamaterial resonators with multiple functionalities and high performance.

All-optical guided resonance tuning in hybrid GaN/Si microring induced by non-radiatively trapped injected hot electrons.

Advanced Si/III-V nanophotonics that emerged in the last decade has already founded the on-chip optical interconnect technology for future integrated systems on chip. New possibilities of light-on-chip applications beside signal transmissions, such as, all-optical sensing, have been given but small attention. Here, all-optical ultraviolet (UV)-sensitive guided resonance tuning in a hybrid GaN/Si microring resonator (HMR) was studied. Resonance redshifting by free-space UV pumping resulted in a 12 dB guided-mode modulation at the 1560 nm telecommunication wavelength. Investigations by experiments, theory, and simulations indicated the origin of the tuning mechanism from hot-electron heat extraction via defects-assisted non-radiative recombinations and electron-phonon interactions. A photothermal tuning efficiency of 73 pm/mW was attained at a pump power of 850 µW, thank to photothermal energy directly generated in the HMR. The UV-sensitive visible-blind all-optical tuning in the HMR may benefit all-optical UV sensing for the optical data era to come.

Resonant Varifocal Micromirror with Piezoresistive Focus Sensor.

This paper reports a microelectromechanical systems (MEMS) resonant varifocal mirror integrated with piezoresistive focus sensor. The varifocal mirror is driven electrostatically at a resonant frequency of a mirror plate to obtain the wide scanning range of a focal length. A piezoresistor is used to monitor the focal length of the varifocal mirror. The device is made of a silicon-on-insulator (SOI) wafer and a glass wafer. A mirror plate and a counter electrode are fabricated by a top silicon layer of the SOI wafer and on the glass wafer, respectively. The piezoresistor is fabricated by ion implantation on a supporting beam of the mirror plate. The stress variation of the beam, which is detected by the piezoresistor, correspond the focal length of the varifocal mirror. The focus length varies from -41 to 35 mm at the resonant frequency of 9.5 kHz. The focal length of the varifocal mirror is monitored by the piezoresistor in real time.

AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy.

AlN nanowall structures were grown on Si (111) substrate using molecular beam epitaxy at substrate temperature of 700 °C with N/Al flux ratios ranging from 50 to 660. A few types of other AlN nanostructures were also grown under the nitrogen-rich conditions. The AlN nanowalls were ranged typically 60-120 nm in width and from 190 to 470 nm in length by changing N/Al flux ratio. The AlN nanowall structures grown along the c-plane consisted of AlN (0002) crystal with full-width at half maximum of the rocking curve about 5000 arcsec.

Reflection color filters of the three primary colors with wide viewing angles using common-thickness silicon subwavelength gratings.

We fabricated reflection color filters of the three primary colors with wide viewing angles using silicon two-dimensional subwavelength gratings on the same quartz substrate. The grating periods were 400, 340, and 300 nm for red, green, and blue filters, respectively. All of the color filters had the same grating thickness of 100 nm, which enabled simple fabrication of a color filter array. Reflected colors from the red, green, and blue filters under s-polarized white-light irradiation appeared in the respective colors at incident angles from 0 to 50°. By rigorous coupled-wave analysis, the dimensions of each color filter were designed, and the calculated reflectivity was compared with the measured reflectivity.

Experimental demonstration of sharp Fano resonance in optical metamaterials composed of asymmetric double bars.

We experimentally demonstrated Fano resonance in metamaterials composed of asymmetric double bars (ADBs) in the optical region. ADB metamaterials were fabricated by a lift-off method, and the optical spectra were measured. Around a wavelength of 1100 nm, measured optical spectra clearly showed sharp Fano resonance due to weak asymmetry of the ADB structures. The highest-quality factor (Q-factor) of the Fano resonance was 7.34. Calculated spectra showed the same tendency as the experimental spectra. Moreover, in a Fano resonant condition, out of phase of induced current flowing along each bar was revealed by electromagnetic field calculations. These antiphase currents decreased radiative loss of the Fano mode, resulting in a high Q-factor of the Fano resonance in ADB metamaterials. As the degree of asymmetry became small, the Q-factor decreased, and the Fano resonance disappeared because the effect of Joule loss became significant.

Comparison of electromagnetically induced transparency between silver, gold, and aluminum metamaterials at visible wavelengths.

Electromagnetically induced transparency (EIT)-like effects in silver, gold, and aluminum metamaterials consisting of dipole resonators and quadrupole resonators were demonstrated at visible wavelengths. Optical characteristics of the metamaterials could be controlled by the gap distance between the two resonators. EIT-like effects were observed at wavelengths between 603 and 789 nm, 654 and 834 nm, and 462 and 693 nm for the silver, gold, and aluminum EIT metamaterials, respectively. At wavelengths longer than around 650 nm, the silver metamaterials had better EIT-like features. At wavelengths shorter than around 650 nm, on the other hand, the aluminum metamaterials showed promising EIT-like results.

A tunable notch filter using microelectromechanical microring with gap-variable busline coupler.

A microelectromechanical tunable notch filter using silicon-photonic freestanding waveguides is proposed, and the basic characteristics are experimentally investigated. The proposed filter is composed of a wavelength-tunable silicon microring resonator and a busline switch. The tunable microring consists of freestanding single-mode waveguides and air-gap directional waveguide couplers. The optical path length of the microring is varied physically by a displacement of electrostatic comb-drive actuator. The busline switch consists of a gap-variable waveguide coupling mechanism, which enables coupling the tunable microring with the busline by another electrostatic comb-drive actuator. During the wavelength tuning of microring, the busline can be disconnected from the microring. Therefore, the proposed device operates as a hitless wavelength-selective switch if they are connected in series. The waveguides are 320 nm in width and 340 nm in thickness. The resonant wavelength shift of the microring is 9.96 nm at the voltage of 26 V with the actuator displacement of 1.0 µm. The coupling to busline is adjusted from the switch-off state at the gap of 600 nm to the switch-on state corresponding to the critical coupling condition at the gap of 383 nm. The whole size of the wavelength-tunable filter with hitless mechanism is about 150 µm by 80 µm. Due to the capacitive operation of the comb-drive actuators, the power consumption is negligibly small.

Fabrication of antireflection subwavelength gratings at the tips of optical fibers using UV nanoimprint lithography.

Antireflection (AR) layers at the tips of optical fibers are indispensable in high efficiency and low noise applications. We realized the AR structures with two-dimensional binary subwavelength gratings (SWGs) at the tips of optical fibers by using a dedicated UV nanoimprint machine. Using this technique, ideal AR structures with desired refractive indices can be realized at low cost in principle. The SWG with the period of 700 nm was fabricated at the tip of a single-mode optical fiber for optical communications system. The reflectance was decreased to less than 0.27% at measured wavelengths between 1460 nm and 1580 nm.

Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy.

GaN nanowall network was epitaxially grown on Si (111) substrate by molecular beam epitaxy. GaN nanowalls overlap and interlace with one another, together with large numbers of holes, forming a continuous porous GaN nanowall network. The width of the GaN nanowall can be controlled, ranging from 30 to 200 nm by adjusting the N/Ga ratio. Characterization results of a transmission electron microscope and X-ray diffraction show that the GaN nanowall is well oriented along the C axis. Strong band edge emission centered at 363 nm is observed in the spectrum of room temperature photoluminescence, indicating that the GaN nanowall network is of high quality. The sheet resistance of the Si-doped GaN nanowall network along the lateral direction was 58 Ω/. The conductive porous nanowall network can be useful for integrated gas sensors due to the large surface area-to-volume ratio and electrical conductivity along the lateral direction by combining with Si micromachining.