Ultrafast evanescently coupled waveguide MUTC-PDs with high responsivity.

Novel evanescently coupled waveguide modified uni-traveling carrier photodiodes (MUTC-PDs) employing a thick multi-layer coupling waveguide are reported. To improve the optical-to-electrical (O/E) conversion efficiency, a thick multi-layer coupling waveguide with a gradually increased refractive index from the bottom layer to the absorption layer is utilized. The refractive index profile facilitates the upward transmission of incident light into the absorption region, thereby enhancing the evanescent coupling efficiency. Meanwhile, the coupling waveguide, with a total thickness of 1.75 µm, expands the mode field diameter, thereby reducing the input coupling loss. Additionally, the top layer of the coupling waveguide also serves as the drift layer. This configuration facilitates efficient light absorption within a short PD length, thus ensuring ultrawide bandwidth and high O/E conversion efficiency simultaneously. Without an additional spot size coupler or anti-reflection coating, the measured responsivity is as high as 0.38 A/W for the PD with an active area of 5 × 6 µm2. Meanwhile, an ultrawide 3-dB bandwidth of 153 GHz has been demonstrated.

Extended ray-mapping method based on differentiable ray-tracing for non-paraxial and off-axis freeform illumination lens design.

The ray-mapping method has been widely used for designing freeform illumination lenses. However, in non-paraxial or off-axis situations, it remains challenging to obtain an integrable ray-mapping, often requiring a complex iterative correction process for the initial mapping. To address this challenge, we propose an extended ray-mapping method that incorporates differentiable ray-tracing into the design pipeline of the ray-mapping method. This enables accurate surface construction according to ray-mapping and efficient shape correction based on irradiance distribution. The proposed method involves two optimization stages. In the first stage, the freeform surface is preliminarily optimized to closely match the optimal transport mapping. The obtained freeform surface is then further optimized in the second stage to minimize the divergence between the target and simulated irradiance distributions. Additionally, the mean curvature of the freeform surface is also constrained in the second stage to facilitate the fabrication of the final freeform surface. Non-paraxial illumination lenses and off-axis illumination lenses have been designed using the proposed method within ten minutes, and simulations demonstrate that the approach is effective and robust.

Ultrafast MUTC photodiodes over 200†GHz with high saturation power.

Novel back-illuminated modified uni-traveling-carrier photodiodes (MUTC-PDs) with wide bandwidth and high saturation power are demonstrated. The effect of cliff layer doping on the electric field distribution is investigated to achieve fast carrier transport. MUTC-PDs with miniaturized device diameter and low contact resistance are fabricated to improve the RC-limited bandwidth. Meanwhile, inductive peaking is implemented to further extend the bandwidth. PDs with 3-µm and 3.6-µm-diameter exhibit a ultrawide bandwidth of 230 GHz and 200 GHz, together with -4.94 dBm and -2.14 dBm saturation power at 220 GHz and 200 GHz, respectively.

Simple and accurate dispersion measurement of GaN microresonators with a fiber ring.

The dispersion characteristics of a microresonator are important for applications in nonlinear optics, and precise measurement of the dispersion profile is crucial to device design and optimization. Here we demonstrate the dispersion measurement of high-quality-factor gallium nitride (GaN) microrings by a single-mode fiber ring, which is simple and convenient to access. Once the dispersion parameters of the fiber ring have been determined by the opto-electric modulation method, the dispersion can be obtained from the microresonator dispersion profile by polynomial fitting. To further verify the accuracy of the proposed method, the dispersion of the GaN microrings is also evaluated with frequency comb-based spectroscopy. Dispersion profiles obtained with both methods are in good agreement with simulations based on the finite element method.

Evaluation of socio-economic-ecological environmental benefits of urban renewal projects based on the coupling coordination degree.

The success of urban renewal projects is attributed to the synergistic development of economic, social, and environmental sustainability. However, people often seek unilateral economic benefits and ignore the coupling and coordination degree of economy-social ecological and environmental benefits. This paper attempts to evaluate the success and sustainability of urban renewal projects based on the coupling coordination degree (CCD) of economic-social-ecological benefits. Firstly, this study relies on a literature review and structural interviews to build a coupling indicator system of economic-social-ecological benefits of urban renewal projects and calculates the weight of evaluation indicators based on the entropy method. Taking 15 urban renewal projects in Guangzhou as objects, this research measures their CCD and explores the coupling relationship. The research results show that (1) among the 60 comprehensive benefit evaluation indicator elements of urban renewal projects, the indicator element with a larger weight is " Education support facilities," the economic benefit indicator element with greater weight is "Regional housing price of renewal areas," and the ecological benefit indicator element with a large weight is "Vitality, and health of the urban landscape, and the characteristics of meeting the needs of residents of all ages." (2) From the project dimension, the evaluation value of the social, economic, and ecological environment benefits of different reconstruction projects have certain differences. From the perspective of the regional dimension, the CCD of comprehensive benefits of urban renewal projects has obvious regional differences. The projects with a high CCD are mostly distributed in the most economically developed regions. The economic and social benefits of the renewal projects located in the economic core of the city center are usually higher, but their eco-environmental benefits are not necessarily the highest. (3) The government should innovate the reconstruction mode of diversified development, improve the public participation mechanism, and build an efficient urban renewal ecosystem. This study concludes that the government should introduce relevant urban renewal policies to provide a theoretical basis and guidance for enterprises to participate in urban renewal projects.

Membrane multiple quantum well electro-optical modulator employing low loss high-k radio-frequency slot waveguides.

A membrane multiple quantum well (MQW) electro-optical (EO) modulator exploiting low loss high-k radio-frequency (RF) slot waveguides is proposed for sub-terahertz bandwidth. By employing high-k barium titanate (BTO) claddings in place of doped InP cladding layers in traditional InP-based MQW modulators, the proposed modulator exhibits enhanced modulation efficiency and bandwidth as well as reduced insertion loss. A low half-wave voltage-length product of 0.24 V·cm is estimated, together with over 240 GHz bandwidth for a 2-mm-long modulation region, thus allowing sub-terahertz operation.

Atomic-scale probing of heterointerface phonon bridges in nitride semiconductor.

Interface phonon modes that are generated by several atomic layers at the heterointerface play a major role in the interface thermal conductance for nanoscale high-power devices such as nitride-based high-electron-mobility transistors and light-emitting diodes. Here we measure the local phonon spectra across AlN/Si and AlN/Al interfaces using atomically resolved vibrational electron energy-loss spectroscopy in a scanning transmission electron microscope. At the AlN/Si interface, we observe various interface phonon modes, of which the extended and localized modes act as bridges to connect the bulk AlN modes and bulk Si modes and are expected to boost the phonon transport, thus substantially contributing to interface thermal conductance. In comparison, no such phonon bridge is observed at the AlN/Al interface, for which partially extended modes dominate the interface thermal conductivity. This work provides valuable insights into understanding the interfacial thermal transport in nitride semiconductors and useful guidance for thermal management via interface engineering.

A single-chip multi-beam steering optical phased array: design rules and simulations.

A waveguide-based multi-beam steering device is proposed for light detection and ranging (LIDAR). The device integrates binary gratings with an optical phased array (OPA), thus enabling a single-chip LIDAR system. The device can provide an N×M beam array that covers a wide angular range while phase shifters help realize steering over a narrow angle range between the beams. The antenna structure for 1D beam splitting is realized by combining the design of a grating coupler and a beam splitter grating, and a uniform beam splitting is achieved along the other dimension using non-uniformly distributed antennas. To illustrate the design, an OPA with an 11×11 beam array is designed at a wavelength of 905 nm. The OPA achieves a wide total field of view (FOV) of 68.8° × 77° with a narrow beam-array-steering angle of 6.5°, enabling a wide-FOV 3D sensing with a high frame rate.

Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core-Shell Structure.

GaN quantum dots embedded in nanowires have attracted much attention due to their superior optical properties. However, due to the large surface-to-volume ratio of the nanowire, the impacts of surface states are the primary issue responsible for the degradation of internal quantum efficiency (IQE) in heterostructured dot-in-nanowires. In this paper, we investigate the carrier recombination mechanism of GaN/AlN dot-in-nanowires with an in situ grown AlN shell structure. Ultraviolet photoelectron spectroscopy (UPS) measurements were performed to describe the band bending effect on samples with different shell thicknesses. Temperature-dependent photoluminescence (TDPL) data support that increasing the AlN shell thickness is an efficient way to improve internal quantum efficiency. Detailed carrier dynamics was analyzed and combined with time-resolved photoluminescence (TRPL). The experimental data are consistent with our physical model that the AlN shell can effectively flatten the band bending near the surface and isolate the surface non-radiative recombination center. Our systematic research on GaN/AlN quantum dots in nanowires with a core-shell structure may significantly advance the development of a broad range of nanowire-based optoelectronic devices.

Van der Waals Epitaxy of III-Nitride Semiconductors Based on 2D Materials for Flexible Applications.

III-nitride semiconductors have attracted considerable attention in recent years owing to their excellent physical properties and wide applications in solid-state lighting, flat-panel displays, and solar energy and power electronics. Generally, GaN-based devices are heteroepitaxially grown on c-plane sapphire, Si (111), or 6H-SiC substrates. However, it is very difficult to release the GaN-based films from such single-crystalline substrates and transfer them onto other foreign substrates. Consequently, it is difficult to meet the ever-increasing demand for wearable and foldable applications. On the other hand, sp2 -bonded two-dimensional (2D) materials, which exhibit hexagonal in-plane lattice arrangements and weakly bonded layers, can be transferred onto flexible substrates with ease. Hence, flexible III-nitride devices can be implemented through such 2D release layers. In this progress report, the recent advances in the different strategies for the growth of III-nitrides based on 2D materials are reviewed, with a focus on van der Waals epitaxy and transfer printing. Various attempts are presented and discussed herein, including the different kinds of 2D materials (graphene, hexagonal boron nitride, and transition metal dichalcogenides) used as release layers. Finally, current challenges and future perspectives regarding the development of flexible III-nitride devices are discussed.

Laser frequency noise characterization by self-heterodyne with both long and short delay.

We propose a novel approach to laser frequency noise characterization by delayed self-heterodyne. Compared with the traditional treatment, our method applies to both long and short delay, corresponding to uncorrelated and correlated self-heterodyne. In the case of long delay, it overcomes the influence of 1/f noise on the intrinsic linewidth extraction from a broadened spectrum, and the results are more accurate than Voigt profile fitting. For short delayed correlated heterodyne, it eliminates artifact peaks at multiples of the reciprocal of delay time introduced by transferring measured RF phase noise to laser phase noise, thus extending the measurement range. In addition, it calibrates the frequency noise overestimation caused by a finite noise floor. This method remains valid when the delay and the coherence time are comparable. Experimental results are presented to demonstrate the effectiveness of the proposed approach in characterizing lasers with intrinsic linewidth ranging from sub-100 Hz to megahertz.

Abnormal Stranski-Krastanov Mode Growth of Green InGaN Quantum Dots: Morphology, Optical Properties, and Applications in Light-Emitting Devices.

Stranski-Krastanov (SK) growth mode is widely adopted for the self-assembled growth of semiconductor quantum dots (QDs), wherein a relatively large critical thickness is essential and a thick wetting layer (WL) is formed beneath the QD layer. In this paper, we report the metal organic vapor phase epitaxy of green InGaN QDs, employing a growth interruption method to decrease the critical thickness and improve the morphology of QDs. The QDs exhibit similar photoluminescence properties with those grown by conventional SK mode, implying the existence of a WL. We experimentally verify that the formation of QDs, whether based on the SK mode or the growth interruption method, conforms to the phase separation theory. However, the density of QDs grown by the interruption method exhibits abnormal dependence on the strain when a quantum well (QW) is inserted beneath the QD layer. Furthermore, the underlying QW not only influences the morphology of the QDs but also plays as a reservoir of electrons, which helps enhance the photoluminescence and the electroluminescence of the QDs. The method of QD growth with improved morphology and luminescence by introducing the QW-QD coupled nanostructure is universally applicable to similar material systems. Furthermore, a 550 nm green light-emitting diode (LED) and a 526 nm superluminescent LED based on the nanostructure are demonstrated.

Improving modulation bandwidth of c-plane GaN-based light-emitting diodes by an ultra-thin quantum wells design.

The GaN-based light emitting diodes (LEDs) have a great potential for visible light communication (VLC) due to their ubiquitous application in general lighting, but the modulation bandwidth of conventional c-plane LEDs is limited by carrier recombination rate in InGaN quantum wells (QWs) due to the polarization-field-induced quantum confined Stark effect (QCSE). Furthermore, the high modulation bandwidth on c-plane sapphire substrates can only be achieved at high current densities. Here, blue LEDs with ultra-thin InGaN QWs (1nm) and GaN barriers (3nm) are grown on c-plane sapphire substrate to suppress QCSE and extend the cut-off frequency from 214 MHz for conventional LEDs to 536 MHz at a current density of 2.5 kA/cm2, which is comparable to devices grown on semi-polar substrates.

An InP-based vortex beam emitter with monolithically integrated laser.

Semiconductor devices capable of generating a vortex beam with a specific orbital angular momentum (OAM) order are highly attractive for applications ranging from nanoparticle manipulation, imaging and microscopy to fiber and quantum communications. In this work, an electrically pumped integrated OAM emitter operating at telecom wavelengths is fabricated by monolithically integrating an optical vortex emitter with a distributed feedback laser on the same InGaAsP/InP epitaxial wafer. A single-step dry-etching process is adopted to complete the OAM emitter, equipped with specially designed top gratings. The vortex beam emitted by the integrated device is captured and its OAM mode purity characterized. The integrated OAM emitter eliminates the external laser required by silicon- or silicon-on-insulator-based OAM emitters, thus demonstrating great potential for applications in communication systems and the quantum domain.

A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes.

Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current density perplexes the development of high-power solid-state lighting. Although the relevant study has lasted for about 10 years, its mechanism is still not thoroughly clear, and consequently its solution is also unsatisfactory up to now. Some emerging applications, e.g., high-speed visible light communication, requiring LED working under extremely high current density, makes the influence of efficiency droop become more serious. This paper reviews the experimental measurements on LED to explain the origins of droop in recent years, especially some new results reported after 2013. Particularly, the carrier lifetime of LED is analyzed intensively and its effects on LED droop behaviors are uncovered. Finally, possible solutions to overcome LED droop are discussed.

A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures.

Based on carrier rate equation, a new model is proposed to explain the non-exponential nature of time-resolved photoluminescence (TRPL) decay curves in the polar InGaN/GaN multi-quantum-well structures. From the study of TRPL curves at different temperatures, it is found that both radiative and non-radiative recombination coefficients vary from low temperature to room temperature. The variation of the coefficients is compatible with the carrier density of states distribution as well as the carrier localization process. These results suggest that there is a novel method to calculate the internal quantum efficiency, which is a complement to the traditional one based on temperature dependent photoluminescence measurement.

Aluminum nitride-on-sapphire platform for integrated high-Q microresonators.

We demonstrate aluminum nitride (AlN) on sapphire as a novel platform for integrated optics. High-confinement AlN microring resonators are realized by adopting a partially etched (pedestal) waveguide to relax the required etching selectivity for exact pattern transfer. A wide taper is employed at the chip end facets to ensure a low fiber-to-chip coupling loss of ~2.8 dB/facet for both transverse-electric (TE) and transverse-magnetic (TM) modes. Furthermore, the intrinsic quality factors (Qint) recorded with a high-resolution linewidth measurement are up to ~2.5 and 1.9 million at telecom band for fundamental TE00 and TM00 modes, corresponding to a low intracavity propagation loss of ~0.14 and 0.2 dB/cm as well as high resonant buildup of 473 and 327, respectively. Such high-Q AlN-on-sapphire microresonators are believed to be very promising for on-chip nonlinear optics.

Study on spin and optical polarization in a coupled InGaN/GaN quantum well and quantum dots structure.

The spin and optical polarization based on a coupled InGaN/GaN quantum well (QW) and quantum dots (QDs) structure is investigated. In this structure, spin-electrons can be temporarily stored in QW, and spin injection from the QW into QDs via spin-conserved tunneling is enabled. Spin relaxation can be suppressed owing to the small energy difference between the initial state in the QW and the final states in the QDs. Photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements are carried out on optical spin-injection and -detection. Owing to the coupled structure, spin-conserved tunneling mechanism plays a significant role in preventing spin relaxation process. As a result, a higher circular polarization degree (CPD) (~49.1%) is achieved compared with conventional single layer of QDs structure. Moreover, spin relaxation time is also extended to about 2.43 ns due to the weaker state-filling effect. This coupled structure is believed an appropriate candidate for realization of spin-polarized light source.

Low-temperature-dependent property in an avalanche photodiode based on GaN/AlN periodically-stacked structure.

In ultra-high sensitive APDs, a vibrate of temperature might bring a fatal decline of the multiplication performance. Conventional method to realize a temperature-stable APD focuses on the optimization of device structure, which has limited effects. While in this paper, a solution by reducing the carrier scattering rate based on an GaN/AlN periodically-stacked structure (PSS) APD is brought out to improve temperature stability essentially. Transport property is systematically investigated. Compared with conventional GaN homojunction (HJ) APDs, electron suffers much less phonon scatterings before it achieves ionization threshold energy and more electrons occupy high energy states in PSS APD. The temperature dependence of ionization coefficient and energy distribution is greatly reduced. As a result, temperature stability on gain is significantly improved when the ionization happens with high efficiency. The change of gain for GaN (10 nm)/AlN (10 nm) PSS APD from 300 K to 310 K is about 20% lower than that for HJ APD. Additionally, thicker period length is found favorable to ionization coefficient ratio but a bit harmful to temperature stability, while increasing the proportion of AlN at each period in a specific range is found favorable to both ionization coefficient ratio and temperature stability.

Light extraction efficiency enhancement of GaN-based blue LEDs based on ITO/ InxO ohmic contacts with microstructure formed by annealing in oxygen.

Indium tin oxide (ITO)/ indium oxide (InxO) double layer structure was adopted as the transparent conduction and light scattering function layer to improve the light extraction efficiency of the GaN-based blue LEDs. The double layer structure was first deposited in one run by electron beam evaporation using ITO and Indium as the source respectively, and then annealed in an oxygen environment. This method can fabricate transparent electrode with microstructure and low specific contact resistivity one time free from lithography and etching, which makes the fabrication process simple and at a ower cost. For the 220 nm ITO/ 170 nm InxO double layer sample annealed at 600°C for 15 min in oxygen, measurement results show that its root mean square of roughness of the surface microstructure can be as high as 85.2 nm which introduces the strongest light scattering. Its light transmittance at 450 nm can maintain 92.4%. At the same time, it can realize lower specific contact resistivity with p-InGaN. Compared with the GaN-based blue LEDs with only 220 nm ITO electrode, the light output power of the LEDs with 220 nm ITO/ 170 nm InxO double layer structure can be increased about 58.8%, and working voltage at 20 mA injection current is decreased about 0.23 V due to the enhanced current spreading capability. The light output power improvement is also theoretically convinced by finite difference time domain simulations.