Super-selective cryogenic etching for sub-10 nm features.

Plasma etching is a powerful technique for transferring high-resolution lithographic masks into functional materials. Significant challenges arise with shrinking feature sizes, such as etching with thin masks. Traditionally this has been addressed with hard masks and consequently additional costly steps. Here we present a pathway to high selectivity soft mask pattern transfer using cryogenic plasma etching towards low-cost high throughput sub-10 nm nanofabrication. Cryogenic SF(6)/O(2) gas chemistry is studied for high fidelity, high selectivity inductively coupled plasma etching of silicon. Selectivity was maximized on large features (400 nm-1.5 µm) with a focus on minimizing photoresist etch rates. An overall anisotropic profile with selectivity around 140:1 with a photoresist mask for feature size 1.5 µm was realized with this clean, low damage process. At the deep nanoscale, selectivity is reduced by an order of magnitude. Despite these limits, high selectivity is achieved for anisotropic high aspect ratio 10 nm scale etching with thin polymeric masks. Gentler ion bombardment resulted in planar-dependent etching and produced faceted sub-100 nm features.

Sub-10 nm nanofabrication via nanoimprint directed self-assembly of block copolymers.

Directed self-assembly (DSA) of block copolymers (BCPs), either by selective wetting of surface chemical prepatterns or by graphoepitaxial alignment with surface topography, has ushered in a new era for high-resolution nanopatterning. These pioneering approaches, while effective, require expensive and time-consuming lithographic patterning of each substrate to direct the assembly. To overcome this shortcoming, nanoimprint molds--attainable via low-cost optical lithography--were investigated for their potential to be reusable and efficiently template the assembly of block copolymers (BCPs) while under complete confinement. Nanoimprint directed self-assembly conveniently avoids repetitive and expensive chemical or topographical prepatterning of substrates. To demonstrate this technique for high-resolution nanofabrication, we aligned sub-10 nm resolution nanopatterns using a cylinder-forming, organic-inorganic hybrid block copolymer, polystyrene-block-polydimethylsiloxane (PS-b-PDMS). Nanopatterns derived from oxidized PDMS microdomains were successfully transferred into the underlying substrate using plasma etching. In the development phase of this procedure, we investigated the role of mold treatments and pattern geometries as DSA of BCPs are driven by interfacial chemistry and physics. In the optimized route, silicon molds treated with PDMS surface brushes promoted rapid BCP alignment and reliable mold release while appropriate mold geometries provided a single layer of cylinders and negligible residual layers as required for pattern transfer. Molds thus produced were reusable to the same efficacy between nanoimprints. We also demonstrated that shear flow during the nanoimprint process enhanced the alignment of the BCP near open edges, which may be engineered in future schemes to control the BCP microdomain alignment kinetics during DSA.

Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires.

Resistive-switching memory (RRAM) is an emerging nanoscale device based on the localized metal-insulator transition within a few-nanometer-sized metal oxide region. RRAM is one of the most promising memory technologies for the ultimate downscaling of nonvolatile memory. However, to develop memory arrays with densities approaching 1 Tb cm(-2) , bottom-up schemes based on synthesis and assembly of metal oxide nanowires (NWs) must be demonstrated. A RRAM memory device based on core-shell Ni-NiO NWs is presented, in which the Ni core plays the role of the metallic interconnect, while the NiO shell serves as the active switching layer. A resistance change of at least two orders of magnitude is shown on electrical operation of the device, and the metal-insulator switching is unequivocally demonstrated to take place in the NiO shell at the crossing between two NWs or between a NW and a gold electrode strip. Since the fabrication of the NW crossbar device is not limited by lithography, this approach may provide a basis for high-density, low-cost crossbar memory with long-term storage stability.

Ultra-flat coplanar electrodes for controlled electrical contact of molecular films.

Reliable measurement of electrical charge transport in molecular layers is a delicate task that requires establishing contacts with electrodes without perturbing the molecular structure of the film. We show how this can be achieved by means of novel device consisting of ultra-flat electrodes separated by insulating material to support the molecular film. We show the fabrication process of these electrodes using a replica technique where gold electrodes are embedded in a silicon oxide film deposited on the angstrom-level flat surface of a silicon wafer. Importantly, the co-planarity of the electrode and oxide areas of the substrate was in the sub-nanometer range. We illustrate the capabilities of the system by mapping the distribution of electrical transport pathways in molecular thin films of self-assembled oligothiophene derivatives using conductive atomic force microscopy. In comparison with traditional bottom contact non-coplanar electrodes, the films deposited on our electrodes exhibited contact resistances lower by a factor of 40 than that of the similar but non-coplanar electrodes.

Electrostatic force assisted exfoliation of prepatterned few-layer graphenes into device sites.

We present a novel fabrication method for incorporating nanometer to micrometer scale few-layer graphene (FLG) features onto substrates with electrostatic exfoliation. We pattern highly oriented pyrolytic graphite using standard lithographic techniques and subsequently, in a single step, exfoliate and transfer-print the prepatterned FLG features onto a silicon wafer using electrostatic force. We have successfully demonstrated the exfoliation/printing of 18 nm wide FLG nanolines and periodic arrays of 1.4 mum diameter pillars. Furthermore, we have fabricated graphene nanoribbon transistors using the patterned graphene nanoline. Our electrostatic force assisted exfoliation/print process does not need additional adhesion layers and could be stepped and repeated to deliver the prepatterned graphitic material over wafer-sized areas and allows the construction of graphene-based integrated circuits.

Tuning magnetic domain structure in nanoscale La0.7Sr0.3MnO3 islands.

The realization of spin-based devices requires high density, ordered arrays of magnetic materials with a high degree of spin polarization at surfaces. We have synthesized, for the first time, highly spin polarized complex magnetic oxide nanostructures embedded in a paramagnetic matrix by electron beam lithography and ion implantation. Imaging the magnetic domains with X-ray photoemission electron microscopy and magnetic force microscopy reveals a delicate balance between magnetocrystalline, magnetoelastic, and magnetostatic energies that can be tuned by the choice of SrTiO3 substrate orientation, film thickness, island size, and island shape.

Soft X-ray microscopy at a spatial resolution better than 15 nm.

Analytical tools that have spatial resolution at the nanometre scale are indispensable for the life and physical sciences. It is desirable that these tools also permit elemental and chemical identification on a scale of 10 nm or less, with large penetration depths. A variety of techniques in X-ray imaging are currently being developed that may provide these combined capabilities. Here we report the achievement of sub-15-nm spatial resolution with a soft X-ray microscope--and a clear path to below 10 nm--using an overlay technique for zone plate fabrication. The microscope covers a spectral range from a photon energy of 250 eV (approximately 5 nm wavelength) to 1.8 keV (approximately 0.7 nm), so that primary K and L atomic resonances of elements such as C, N, O, Al, Ti, Fe, Co and Ni can be probed. This X-ray microscopy technique is therefore suitable for a wide range of studies: biological imaging in the water window; studies of wet environmental samples; studies of magnetic nanostructures with both elemental and spin-orbit sensitivity; studies that require viewing through thin windows, coatings or substrates (such as buried electronic devices in a silicon chip); and three-dimensional imaging of cryogenically fixed biological cells.

20-nm resolution x-ray microscopy demonstrated by use of multilayer test structures [corrected].

A spatial resolution of 20 nm is demonstrated at 2.07-nm wavelength by use of a soft x-ray microscope based on Fresnel zone plate lenses and partially coherent illumination. Nanostructural test patterns, formed by sputtered multilayer coatings and transmission electron microscopy thinning techniques, provide clear experimental results.