Effect of Surface Chemistry on the Electrical Double Layer in a Long-Chain Ionic Liquid.

Room temperature ionic liquids (ILs) can create a strong accumulation of charges at solid interfaces by forming a very thin and dense electrical double layer (EDL). The structure of this EDL has important consequences in numerous applications involving ILs, for example, in supercapacitors, sensors, and lubricants, by impacting the interfacial capacitance, the charge carrier density of semiconductors, as well as the frictional properties of the interfaces. We have studied the interfacial structure of a long chain imidazolium-based IL (1-octyl-3-methylimidazolium dicyanamide) on several substrates: mica, silica, silicon, and molybdenum disulfide (MoS2), using atomic force microscopy (AFM) experiments and molecular dynamics (MD) simulations. We have observed 3 types of interfacial structures for the same IL, depending on the chemistry of the substrate and the water content, showing that the EDL structure is not an intrinsic property of the IL. We evidenced that at a low water content, neutral and apolar (thus hydrophobic) substrates promote a thin layer structure, where the ions are oriented parallel to the substrate and cations and anions are mixed in each layer. In contrast, a strongly charged (thus hydrophilic) substrate yields an extended structuration into several bilayers, while a heterogeneous layering with loose bilayer regions was observed on an intermediate polar and weakly charged substrate and on an apolar one at a high bulk water content. In the latter case, water contamination favors the formation of bilayer patches by promoting the segregation of the long chain IL into polar and apolar domains.

Magnetic, Structural, and Chemical Properties of Cobalt Nanoparticles Synthesized in Ionic Liquids.

Cobalt nanoparticles (CoNPs) exhibit quite unique magnetic, catalytic, and optical properties. In this work, imidazolium-based ionic liquids (ILs) are successfully used to elaborate magnetically responsive suspensions of quite monodisperse CoNPs with diameters below 5 nm. The as-synthesized CoNPs adopt the noncompact and metastable structure of ϵ-Co that progressively evolves at room temperature toward the stable hexagonal close-packed allotrope of Co. Accordingly, magnetization curves are consistent with zero-valent Co. As expected in this size range, the CoNPs are superparamagnetic at room temperature. Their blocking temperature is found to depend on the size of the IL cation. The CoNPs produced in an IL with a large cation exhibit a very high anisotropy, attributed to an enhanced dipolar coupling of the NPs, even though a larger interparticle distance is observed in this IL. Finally, the presence of surface hydrides on the CoNPs is assessed and paves the way toward the synthesis for Co-based bimetallic NPs.

Impact of Surface Chemistry on Copper Deposition in Mesoporous Silicon.

An easy, efficient, and safe process is developed to metallize mesoporous silicon (PSi) with Cu from the decomposition of a solution of mesitylcopper (CuMes) in an imidazolium-based ionic liquid (IL), [C1C4Im][NTf2]. The impregnation of a solution of CuMes in IL affords the deposition of metallic islands not only on the surface but also deep within the pores of a mesoporous Si layer with small pores below 10 nm. Therefore, this process is well suited to efficiently and completely metallize PSi layers. An in-depth mechanistic study shows that metal deposition is due to the reduction of CuMes by surface silane groups rather than by Si oxidation as observed in aqueous or water-containing media. This could open a new route to the chemical metallization of PSi by less-noble metals difficult to attain by a conventional displacement reaction.

An Efficient, Versatile, and Safe Access to Supported Metallic Nanoparticles on Porous Silicon with Ionic Liquids.

The metallization of porous silicon (PSi) is generally realized through physical vapor deposition (PVD) or electrochemical processes using aqueous solutions. The former uses a strong vacuum and does not allow for a conformal deposition into the pores. In the latter, the water used as solvent causes oxidation of the silicon during the reduction of the salt precursors. Moreover, as PSi is hydrophobic, the metal penetration into the pores is restricted to the near-surface region. Using a solution of organometallic (OM) precursors in ionic liquid (IL), we have developed an easy and efficient way to fully metallize the pores throughout the several-µm-thick porous Si. This process affords supported metallic nanoparticles characterized by a narrow size distribution. This process is demonstrated for different metals (Pt, Pd, Cu, and Ru) and can probably be extended to other metals. Moreover, as no reducing agent is necessary (the decomposition in an argon atmosphere at 50 °C is fostered by surface silicon hydride groups borne by PSi), the safety and the cost of the process are improved.

Alkoxysilane layers compatible with copper deposition for advanced semiconductor device applications.

Alkoxysilane having various functional headgroups (amino and mercapto) and morphologies was deposited by supercritical CO(2) onto a porous dielectric material to replace the metallic barrier used in semiconductor devices. These organic layers were successfully coated with Cu. The morphologies of the stacks were investigated by X-ray and neutron reflectometry and atomic force microscopy. Whereas PVD Cu deposition is not adapted to silanized dielectric material with mercapto and aminopropyltrimethoxysilane but acceptable with aminoethylaminopropyltrimethoxysilane, the MOCVD process is more interesting. XRR and NR data clearly indicate that silane layers remain intact after copper deposition and, depending on the Cu immobilization capability of the chemical function of the silane and its orientation into the layer, the Cu film morphologies are different. Dense, thin films having small Cu grains were obtained with an aminoethylaminopropyltrimethoxysilane layer, and thick films having a low density and large Cu grains were obtained with an aminopropyltrimethoxysilane layer. Nucleation and growth mechanisms are discussed.