RESUMO
The energy required to generate ultrashort pulses with petawatt peak power from a Ti:sapphire laser system is a few tens of joules. To achieve this, the final amplifier must have a gain region of around 5 cm diameter that is uniformly pumped at high fluence. The high level of amplified spontaneous emission (ASE) in such an amplifier will seriously degrade its performance unless care is taken to minimise the transverse gain and the internal reflections from the crystal edges. In developing the amplifiers for the Astra Gemini laser system, we have combined the techniques of beam homogenisation and double-pass pumping of a lightly-doped crystal with a new index-matched absorber liquid. Our results demonstrate that this combined approach successfully overcomes the problem of gain depletion by ASE in a high-energy Ti:sapphire amplifier.
Assuntos
Óxido de Alumínio/química , Amplificadores Eletrônicos , Desenho Assistido por Computador , Lasers , Modelos Teóricos , Titânio/química , Simulação por Computador , Desenho de Equipamento , Análise de Falha de EquipamentoRESUMO
The development of high peak power and energy laser systems require the assurance that any backscattered radiation will not lead to damage of the laser system. We present the characterization of the backscattered radiation for different target types and conditions at petawatt power levels and intensities (>10(20)W/cm2). We observe that radiation is generated between 700 and 900 nm, as well as the expected self emission and laser fundamental. The percentage of the incident light backscattered reduces as a function of the incident energy and is typically <1% for petawatt laser interactions.
