DFT Investigation of the Structural, Electronic, and Optical Properties of AsTi (Bi)-Phase ZnO under Pressure for Optoelectronic Applications.

Pressure-induced phases of ZnO have attracted considerable attention owing to their excellent electronic and optical properties. This study provides a vital insight into the electronic structure, optical characteristics, and structural properties of the AsTi (Bi) phase of ZnO under high pressure via the DFT-based first-principles approach. The phase transformation from BN(Bk) to the Bi phase of ZnO is estimated at 16.1 GPa using local density approximation, whereas the properties are explored precisely by the hybrid functional B3LYP. The electronic structure exploration confirms that the Bi phase is an insulator with a wider direct bandgap, which expands by increasing pressure. The dielectric function evidenced that the Bi phase behaves as a dielectric in the visible region and a metallic material at 18 eV. Optical features such as the refractive index and loss function revealed the transparent nature of the Bi phase in the UV range. Moreover, the considered Bi phase is found to possess a high absorption coefficient in the ultraviolet region. This research provides strong theoretical support for the development of Bi-phase ZnO-based optoelectronic and photovoltaic devices.

Universal Principle for Large-Scale Production of a High-Quality Two-Dimensional Monolayer via Positive Charge-Driven Exfoliation.

On the basis of the intrinsic characteristics of the layered materials, here we report a universal principle for the production of intact monolayers via layer-by-layer exfoliation from their bulk via positive charge doping. At experimental accessible densities (nc) of ∼1014 cm-2, various multilayer crystals, including graphite, hexagonal boron nitride, transition metal dichalcogenides, MXenes, and black phosphorus, can be exfoliated into the corresponding monolayers through ab initio density functional theory stimulations. The carrier critical thresholds for exfoliating are found to be nearly independent of thickness but dependent on surface size. The universality of positive charge-driven exfoliation originates from the common intrinsic characteristics of electronic structures for layered materials. The positively doped charges that preferentially accumulate near the surface induce interlayer repulsion, leading to layer-by-layer exfoliation when repulsion surpasses interlayer van der Waals force. This strategy may open the possibility of producing diverse high-quality two-dimensional monolayers with a small number of defects toward large-scale manufacturing.

Helium-induced damage in U3Si5 by first-principles studies.

Uranium silicide U3Si5 has been explored as an advanced nuclear fuel component for light water reactor to enhance the accident tolerance. In this paper, in order to understand the fuel performance of U3Si5, the primary point defects, secondary point defects, and the dissolution of He gas were studied by first-principles methods. Compared with U atoms and another type of Si2 atoms, Si1 atoms far from intrinsic Si vacancies are more likely to form point defects, implying that Si vacancies are prone to form separate single vacancies rather than vacancy clusters in the initial stage. From the calculated anti-site defect energies, it can be predicted that non-stoichiometric U-rich phase of U3Si5 are more likely to be formed than Si-rich phase, which are consistent with the chemical analysis of experimentally sintered Si-lean U3Si5 sample. It can be found that a single He atom favors residence in the interstitial site in the U layer directly above/below the intrinsic vacancy. It can also be seen that Vac-U, Vac-Si1, and Vac-Si2 vacancies can energetically accommodate up to 4, 0, and 3 He atoms, respectively. The formation of secondary vacancy defects is strongly dependent on the helium concentration. The current results show that the He-filled vacancy can promote the formation of adjacent secondary vacancy, leading to the formation of gas bubbles. This work may provide theoretical insights into the He irradiation-induced damage in U3Si5 as well as provide valuable clues for improving the design of the UN-U3Si5 composite fuel.

Correction: Helium-induced damage in U3Si5 by first-principles studies.

[This corrects the article DOI: 10.1039/D1RA04031F.].

5-Azacytidine suppresses EC9706 cell proliferation and metastasis by upregulating the expression of SOX17 and CDH1.

5-Azacytidine is a well-known anticancer drug that is clinically used in the treatment of breast cancer, melanoma and colon cancer. It has been reported that 5-azacytidine suppresses the biological behavior of esophageal cancer cells. However, corresponding mechanisms remain unclear. In this study, using Transwell invasion and cell proliferation assays, we demonstrated that 5-azacytidine significantly inhibited the metastasis and proliferation of EC9706 cells, and upregulated the expression of cadherin 1 (CDH1) and SRY-box containing gene 17 (SOX17). Moreover, the inhibition of the metastasis of the 5-azacytidine-treated EC9706 cells was impaired following transfection with siRNA targeting CDH1 (CDH1 siRNA), and the inhibition of cell proliferation was attenuated following the downregulation of SOX17 by siRNA targeting SOX17 (SOX17 siRNA). Furthermore, 5-azacytidine remarkably reduced the CDH1 and SOX17 promoter methylation levels, suggesting that 5-azacytidine upregulates the expression of SOX17 and CDH1 by inhibiting the methylation of the SOX17 and CDH1 promoter. The findings of our study confirm that 5-azacytidine suppresses the proliferation and metastasis of EC9706 esophageal cancer cells by upregulating the expression of CDH1 and SOX17. The expression levels of CDH1 and SOX17 negatively correlate with the promoter methylation levels. CDH1 and SOX17 are potential indicators of the clinical application of 5-azacytidine.

The thermal and electrical properties of the promising semiconductor MXene Hf2CO2.

With the growing interest in low dimensional materials, MXenes have also attracted considerable attention recently. In this work, the thermal and electrical properties of oxygen-functionalized M2CO2 (M = Ti, Zr, Hf) MXenes are investigated using first-principles calculations. Hf2CO2 is determined to exhibit a thermal conductivity better than MoS2 and phosphorene. The room-temperature thermal conductivity along the armchair direction is determined to be 86.25~131.2 Wm(-1) K(-1) with a flake length of 5~100 µm. The room temperature thermal expansion coefficient of Hf2CO2 is 6.094 × 10(-6) K(-1), which is lower than that of most metals. Moreover, Hf2CO2 is determined to be a semiconductor with a band gap of 1.657 eV and to have high and anisotropic carrier mobility. At room temperature, the Hf2CO2 hole mobility in the armchair direction (in the zigzag direction) is determined to be as high as 13.5 × 10(3) cm(2)V(-1)s(-1) (17.6 × 10(3) cm(2)V(-1)s(-1)). Thus, broader utilization of Hf2CO2, such as the material for nanoelectronics, is likely. The corresponding thermal and electrical properties of Ti2CO2 and Zr2CO2 are also provided. Notably, Ti2CO2 presents relatively lower thermal conductivity but much higher carrier mobility than Hf2CO2. According to the present results, the design and application of MXene based devices are expected to be promising.

Characterization of chemical speciation in ultrathin uranium oxide layered films.

A unique approach to detect chemical speciation and distribution on nanometer-scale nuclear materials has been achieved by the combination of neutron reflectometry and shell-isolated surface-enhanced Raman spectroscopy. Both surface and underlying layers of the uranium oxide materials were determined with angstrom-level resolution. Our results reveal that the UO(x) film is composed of three sublayers: an ∼38 Å thick layer of U(3)O(8) formed along the UO(x)/substrate interface; the adjacent sublayer consists of an ∼900 Å thick single phase of α-UO(3), and the top layer is γ-UO(3) with a thickness of ∼115 Å.

Raman spectroscopic studies of defect structures and phase transition in hyper-stoichiometric UO(2+x).

A method to determine the defect structures in hyper-stoichiometric UO(2+x) using a combination of XRD and Raman spectroscopy has been developed. A sequence of phase transitions, from cubic to tetragonal symmetry, occurs with increasing degree of non-stoichiometry. This sequence proceeds from a cubic phase through an intermediate t''-type tetragonal (axial ratio c/a = 1) phase to a final t-type tetragonal (c/a not = 1) phase. Four distinct structural defect regions can be identified in the stoichiometry range, UO(2) to U(3)O(7): (i) a random point defect structure (x (in UO(2+x)) < or = 0.05); (ii) a non-stoichiometry region (0.05 < or = x < or = 0.15) over which point defects are gradually eliminated and replaced by the Willis 2:2:2 cluster; (iii) a mixture of Willis and cuboctahedral clusters (0.15 < or = x < or = 0.23); (iv) the cuboctahedral cluster (x > or = 0.23). The geometry and steric arrangement of these defects is primarily determined by the concentration of the excess-oxygen interstitials.