1.
Phys Rev Lett
; 102(21): 217003, 2009 May 29.
Artigo
em Inglês
| MEDLINE
| ID: mdl-19519130
RESUMO
We demonstrate that the third elemental group-IV semiconductor, germanium, exhibits superconductivity at ambient pressure. Using advanced doping and annealing techniques of state-of-the-art semiconductor processing, we have fabricated a highly Ga-doped Ge (GeratioGa) layer in near-intrinsic Ge. Depending on the detailed annealing conditions, we demonstrate that superconductivity can be generated and tailored in the doped semiconducting Ge host at temperatures as high as 0.5 K. Critical-field measurements reveal the quasi-two-dimensional character of superconductivity in the approximately 60 nm thick GeratioGa layer. The Cooper-pair density in GeratioGa appears to be exceptionally low.
2.
Phys Rev B Condens Matter
; 52(22): 15776-15784, 1995 Dec 01.
Artigo
em Inglês
| MEDLINE
| ID: mdl-9980952