PINK: a tender X-ray beamline for X-ray emission spectroscopy.

A high-flux beamline optimized for non-resonant X-ray emission spectroscopy (XES) in the tender X-ray energy range has been constructed at the BESSY II synchrotron source. The beamline utilizes a cryogenically cooled undulator that provides X-rays over the energy range 2.1 keV to 9.5 keV. This energy range provides access to XES [and in the future X-ray absorption spectroscopy (XAS)] studies of transition metals ranging from Ti to Cu (Kα, Kß lines) and Zr to Ag (Lα, Lß), as well as light elements including P, S, Cl, K and Ca (Kα, Kß). The beamline can be operated in two modes. In PINK mode, a multilayer monochromator (E/ΔE ≃ 30-80) provides a high photon flux (1014 photons s-1 at 6 keV and 300 mA ring current), allowing non-resonant XES measurements of dilute substances. This mode is currently available for general user operation. X-ray absorption near-edge structure and resonant XAS techniques will be available after the second stage of the PINK commissioning, when a high monochromatic mode (E/ΔE ≃ 10000-40000) will be facilitated by a double-crystal monochromator. At present, the beamline incorporates two von Hamos spectrometers, enabling time-resolved XES experiments with time scales down to 0.1 s and the possibility of two-color XES experiments. This paper describes the optical scheme of the PINK beamline and the endstation. The design of the two von Hamos dispersive spectrometers and sample environment are discussed here in detail. To illustrate, XES spectra of phosphorus complexes, KCl, TiO2 and Co3O4 measured using the PINK setup are presented.

At-wavelength inspection of sub-40 nm defects in extreme ultraviolet lithography mask blank by photoemission electron microscopy.

A new at-wavelength inspection technology to probe nanoscale defects buried underneath Mo/Si multilayers on an extreme ultraviolet (EUV) lithography mask blank has been implemented using EUV photoemission electron microscopy (EUV-PEEM). EUV-PEEM images of programmed defect structures of various lateral and vertical sizes recorded at an ~13.5 nm wavelength show that 35 nm wide and 4 nm high buried line defects are clearly detectable. The imaging technique proves to be sensitive to small phase jumps, enhancing the edge visibility of the phase defects, which is explained in terms of a standing wave enhanced image contrast at resonant EUV illumination.