RESUMO
Doped EuO is an attractive material for the fabrication of proof-of-concept spintronic devices. Yet for decades its use has been hindered by its instability in air and the difficulty of preparing and patterning high-quality thin films. Here, we establish EuO as the pre-eminent material for the direct integration of a carrier-concentration-matched half-metal with the long-spin-lifetime semiconductors silicon and GaN, using methods that transcend these difficulties. Andreev reflection measurements reveal that the spin polarization in doped epitaxial EuO films exceeds 90%, demonstrating that EuO is a half-metal even when highly doped. Furthermore, EuO is epitaxially integrated with silicon and GaN. These results demonstrate the high potential of EuO for spintronic devices.
