In Situ Radiation Hardness Study of Amorphous Zn-In-Sn-O Thin-Film Transistors with Structural Plasticity and Defect Tolerance.

Solution-processed metal-oxide thin-film transistors (TFTs) with different metal compositions are investigated for ex situ and in situ radiation hardness experiments against ionizing radiation exposure. The synergetic combination of structural plasticity of Zn, defect tolerance of Sn, and high electron mobility of In identifies amorphous zinc-indium-tin oxide (Zn-In-Sn-O or ZITO) as an optimal radiation-resistant channel layer of TFTs. The ZITO with an elemental blending ratio of 4:1:1 for Zn/In/Sn exhibits superior ex situ radiation resistance compared to In-Ga-Zn-O, Ga-Sn-O, Ga-In-Sn-O, and Ga-Sn-Zn-O. Based on the in situ irradiation results, where a negative threshold voltage shifts and a mobility increase as well as both off current and leakage current increase are observed, three factors are proposed for the degradation mechanisms: (i) increase of channel conductivity, (ii) interface-trapped and dielectric-trapped charge buildup, and (iii) trap-assisted tunneling in the dielectric. Finally, in situ radiation-hard oxide-based TFTs are demonstrated by employing a radiation-resistant ZITO channel, a thin dielectric (50 nm SiO2), and a passivation layer (PCBM for ambient exposure), which exhibit excellent stability with an electron mobility of ∼10 cm2/V s and aΔVth of <3 V under real-time (15 kGy/h) gamma-ray irradiation in an ambient atmosphere.

Development and Characterization of Solution-Processable Dithieno[3,2-b : 2',3'-d]thiophenes Derivatives with Various End-capped Groups for Organic Field-Effect Transistors.

In this paper, four organic materials based on dithieno[3,2-b : 2',3'-d]thiophene (DTT) core structure with end-capping groups (phenyl and thienyl) and linker (acetylenic and olefinic) between DTT-core and end-capping groups were synthesized and characterized as solution-processable organic semiconductors (OSCs) for organic field-effect transistors (OFETs). Thermal, optical, and electrochemical properties of the corresponding materials were determined. Next, all DTT-derivatives were coated by solution-shearing method, and the thin-film microstructures and morphologies were investigated. To investigate the electrical performance of four newly synthesized DTT-derivatives, bottom-gate/top-contact OFETs were fabricated and characterized in ambient condition. It was found that substitution of acetylenic for olefinic linkers between DTT-cores and end-capping groups enhanced device performance. Especially, the resulting OFETs based on the compound containing phenylacetylene exhibited the highest hole mobility of 0.15 cm2 /Vs and current on/off ratio of ∼106 , consistent with film morphology and texture showing long range interconnected crystalline grains and strong diffraction peaks.

Synthesis, Characterization, and Thin-Film Transistor Response of Benzo[i]pentahelicene-3,6-dione.

Organic semiconductors hold the promise of simple, large area solution deposition, low thermal budgets as well as compatibility with flexible substrates, thus emerging as viable alternatives for cost-effective (opto)-electronic devices. In this study, we report the optimized synthesis and characterization of a helically shaped polycyclic aromatic compound, namely benzo[i]pentahelicene-3,6-dione, and explored its use in the fabrication of organic field effect transistors. In addition, we investigated its thermal, optical absorption, and electrochemical properties. Finally, the single crystal X-ray characterization is reported.

A Solution-Processable meso-Phenyl-BODIPY-Based n-Channel Semiconductor with Enhanced Fluorescence Emission.

The molecular design, synthesis, and characterization of an acceptor-donor-acceptor (A-D-A) semiconductor BDY-Ph-2T-Ph-BDY comprising a central phenyl-bithiophene-phenyl π-donor and BODIPY π-acceptor end-units is reported. The semiconductor shows an optical band gap of 2.32 eV with a highly stabilized HOMO/LUMO (-5.74 eV/-3.42 eV). Single-crystal X-ray diffraction (XRD) reveals D-A dihedral angle of ca. 66° and strong intermolecular "C-H ⋅⋅⋅ π (3.31 Å)" interactions. Reduced π-donor strength, increased D-A dihedral angle, and restricted intramolecular D-A rotations allows for both good fluorescence efficiency (ΦF =0.30) and n-channel OFET transport (µe =0.005 cm2 /V ⋅ s; Ion /Ioff =104 -105 ). This indicates a much improved (6-fold) fluorescence quantum yield compared to the meso-thienyl BODIPY semiconductor BDY-4T-BDY. Photophysical studies reveal important transitions between locally excited (LE) and twisted intramolecular charge-transfer (TICT) states in solution and the solid state, which could be controlled by solvent polarity and nano-aggregation. This is the first report of such high emissive characteristics for a BODIPY-based n-channel semiconductor.

BODIPY-Based Semiconducting Materials for Organic Bulk Heterojunction Photovoltaics and Thin-Film Transistors.

The rapid emergence of organic (opto)electronics as a promising alternative to conventional (opto)electronics has been achieved through the design and development of novel π-conjugated systems. Among various semiconducting structural platforms, 4,4-difluoro-4-bora-3a,4a-diaza-s-indacene (BODIPY) π-systems have recently attracted attention for use in organic thin-films transistors (OTFTs) and organic photovoltaics (OPVs). This Review article provides an overview of the developments in the past 10 years on the structural design and synthesis of BODIPY-based organic semiconductors and their application in OTFT/OPV devices. The findings summarized and discussed here include the most recent breakthroughs in BODIPYs with record-high charge carrier mobilities and power conversion efficiencies (PCEs). The most up-to-date design rationales and discussions providing a strong understanding of structure-property-function relationships in BODIPY-based semiconductors are presented. Thus, this review is expected to inspire new research for future materials developments/applications in this family of molecules.