Enhancing Thickness Uniformity of Nb2O5/SiO2 Multilayers Using Shadow Masks for Flexible Color-Filtering Applications.

Using a stainless shadow mask combined with a magnetron-ion-assisted deposition (IAD) sputtering system, we investigate the surface morphologies and optical properties of microfilms. Optimal color-filter (CF) coating microfilms with niobium pent-oxide (Nb2O5)/silicon dioxide (SiO2) multilayers on a hard polycarbonate (HPC) substrate, grown at 85 °C and 50 SCCM oxygen flow, can obtain a fairly uniform thickness (with an average roughness of 0.083 and 0.106 nm respectively for Nb2O5 and SiO2 films) through all positions. On a flexible HPC substrate with the Nb2O5/SiO2 microfilms, meanwhile, the peak transmittances measured in the visible range are 95.70% and 91.47%, respectively, for coatings with and without a shadow mask for this new-tech system. For the optimal CF application with a shadow mask, transmittance on each 100 nm band-pass wavelength is enhanced by 4.04% absolute (blue), 2.96% absolute (green), and 2.12% absolute (red). Moreover, the developed new-tech system not only enhances the quality of the films by achieving smoother and uniform surfaces but also reduces deposition time, thereby improving overall process efficiency. For the with-shadow-mask condition, there is little shift at 50% transmittance (T50%), and high transmittance (~97%) is maintained after high-temperature (200 °C) baking for 12 h. These results are well above the commercial CF standard (larger than 90%) and demonstrate reliability and good durability for flexible optical applications.

Optoelectronic Effects of Copper-Indium-Gallium-Sulfur (CIGS2)-Solar Cells Prepared by Three-Stage Co-Evaporation Process Technology.

In this paper, the performance of Cu-(In,Ga)-S2 (CIGS2) solar cells with adjusting composite [Cu]/([Ga] + [In]) (CGI)-ratio absorber was explored and compared through an improved three-stage co-evaporation technique. For co-evaporating CIGS2 absorber as a less toxic alternative to Cd-containing film, we analyzed the effect of the CGI-ratio stoichiometry and crystallinity, and explored its opto-electric sensing characteristic of individual solar cell. The results of this research signified the potential of high-performance CIGS2-absorption solar cells for photovoltaic (PV)-module industrial applications. For the optimal CIGS2-absorption film (CGI = 0.95), the Raman main-phase signal (A1) falls at 291 cm-1, which was excited by the 532 nm line of Ar+-laser. Using photo-luminescence (PL) spectroscopy, the corresponding main-peak bandgaps measured was 1.59 eV at the same CGI-ratio film. Meanwhile, the best conversion efficiency (η = 3.212%) and the average external quantum efficiency (EQE = 51.1% in the visible-wavelength region) of photo-electric properties were achieved for the developed CIGS2-solar cells (CGI = 0.95). The discoveries of this CIGS2-absorption PV research provided a new scientific understanding of solar cells. Moreover, this research undeniably contributes to a major advancement towards practical PV-module applications and can help more to build an eco-friendly community.

Performance of High Efficiency Avalanche Poly-SiGe Devices for Photo-Sensing Applications.

This paper explores poly-silicon-germanium (poly-SiGe) avalanche photo-sensors (APSs) involving a device of heterojunction structures. A low pressure chemical vapor deposition (LPCVD) technique was used to deposit epitaxial poly-SiGe thin films. The thin films were subjected to annealing after the deposition. Our research shows that the most optimal thin films can be obtained at 800 °C for 30 min annealing in the hydrogen atmosphere. Under a 3-µW/cm2 incident light (with a wavelength of 550 nm) and up to 27-V biased voltage, the APS with a n+-n-p-p+ alloy/SiO2/Si-substrate structure using the better annealed poly-SiGe film process showed improved performance by nearly 70%, 96% in responsivity, and 85% in quantum efficiency, when compared to the non-annealed APS. The optimal avalanche multiplication factor curve of the APS developed under the exponent of n = 3 condition can be improved with an increase in uniformity corresponding to the APS-junction voltage. This finding is promising and can be adopted in future photo-sensing and optical communication applications.

Ion-assisted sputtering deposition of antireflection film coating for flexible liquid-crystal display applications.

The optical properties and surface morphologies of sputtering films both without and with use of the ion-assisted deposition (IAD) technique are investigated and compared. Optimal antireflection (AR) coating films with SiO2/Nb2O5 layers, which are grown at 80 degrees C with a 15 cm distance between target and substrate, 55 SCCM oxygen flow (SCCM denotes cubic centimeters per minute at STP), and 1250 W magnetron sputtering power with use of the IAD technique, are used to study the optical performance. By using an atomic force microscope to investigate the surface of the sputtered Nb2O5 films, we find that the films' roughness is 0.185 nm. On a flexible hardness polycarbonate (HPC) substrate with the multilayer AR films, the peak transmittances measured in the visible range are 95.89% and 93.40%, respectively, for coatings with and without use of the IAD sputtering technology. These results are better than those measured with a bare HPC substrate (91.25%) and are well above the commercial liquid-crystal display standard (90%) and flexible application.