RESUMO
A series of the p-Al(x)Ga(1-x)N/Al(y)Ga(1-y)N super lattice (SL) structures has been examined as the p-contact and transparent layer for different ultra-violet light-emitting-diodes (UVLEDs) with a self-consistent 1D Poisson and Schrödinger solver. The recommended solution for designing the suitable SL structure in UVLEDs with different UV wavelength has been found. By calculating the absorption coefficient of the SL structure, we confirmed that the proper SL structure has the enormous potential of being the transparent p-contact layer in AlGaN UVLED, especially in UV-C band (< 280 nm). The suitable emission wavelengths of UVLEDs ranging from 219 nm to 353 nm are found. The influences of different well and barrier thickness on SL structures are discussed as well.
