Scalable method for the fabrication and testing of glass-filled, three-dimensionally sculpted extraordinary transmission apertures.

This Letter features a new, scalable fabrication method and experimental characterization of glass-filled apertures exhibiting extraordinary transmission. These apertures are fabricated with sizes, aspect ratios, shapes, and side-wall profiles previously impossible to create. The fabrication method presented utilizes top-down lithography to etch silicon nanostructures. These nanostructures are oxidized to provide a transparent template for the deposition of a plasmonic metal. Gold is deposited around these structures, reflowed, and the surface is planarized. Finally, a window is etched through the substrate to provide optical access. Among the structures created and tested are apertures with height to diameter aspect ratios of 8:1, constructed with rectangular, square, cruciform, and coupled cross sections, with tunable polarization sensitivity and displaying unique properties based on their sculpted side-wall shape. Transmission data from these aperture arrays is collected and compared to examine the role of spacing, size, and shape on their overall spectral response. The structures this Letter describes can have a variety of novel applications from the creation of new types of light sources to massively multiplexed biosensors to subdiffraction limit imaging techniques.

Three-dimensional etching of silicon for the fabrication of low-dimensional and suspended devices.

In order to expand the use of nanoscaled silicon structures we present a new etching method that allows us to shape silicon with sub-10 nm precision. This top-down, CMOS compatible etching scheme allows us to fabricate silicon devices with quantum behavior without relying on difficult lateral lithography. We utilize this novel etching process to create quantum dots, quantum wires, vertical transistors and ultra-high-aspect ratio structures. We believe that this etching technique will have broad and significant impacts and applications in nano-photonics, bio-sensing, and nano-electronics.

Tunable visible and near-IR emission from sub-10 nm etched single-crystal Si nanopillars.

Visible and near-IR photoluminescence (PL) is reported from sub-10 nm silicon nanopillars. Pillars were plasma etched from single crystal Si wafers and thinned by utilizing strain-induced, self-terminating oxidation of cylindrical structures. PL, lifetime, and transmission electron microscopy were performed to measure the dimensions and emission characteristics of the pillars. The peak PL energy was found to blue shift with narrowing pillar diameter in accordance with a quantum confinement effect. The blue shift was quantified using a tight binding method simulation that incorporated the strain induced by the thermal oxidation process. These pillars show promise as possible complementary metal oxide semiconductor compatible silicon devices in the form of light-emitting diode or laser structures.