Machine Learning for Human Motion Intention Detection.

The gait pattern of exoskeleton control conflicting with the human operator's (the pilot) intention may cause awkward maneuvering or even injury. Therefore, it has been the focus of many studies to help decide the proper gait operation. However, the timing for the recognization plays a crucial role in the operation. The delayed detection of the pilot's intent can be equally undesirable to the exoskeleton operation. Instead of recognizing the motion, this study examines the possibility of identifying the transition between gaits to achieve in-time detection. This study used the data from IMU sensors for future mobile applications. Furthermore, we tested using two machine learning networks: a linearfFeedforward neural network and a long short-term memory network. The gait data are from five subjects for training and testing. The study results show that: 1. The network can successfully separate the transition period from the motion periods. 2. The detection of gait change from walking to sitting can be as fast as 0.17 s, which is adequate for future control applications. However, detecting the transition from standing to walking can take as long as 1.2 s. 3. This study also find that the network trained for one person can also detect movement changes for different persons without deteriorating the performance.

InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO2 patterned GaN film.

In this study, GaN-based light-emitting diodes (LEDs) with naturally formed oblique sidewall facets (OSFs) were fabricated through a selective regrowth process. The SiO2 mask layer was patterned on a heavily doped n-GaN template layer rather than on a sapphire substrate. As a result, the periphery of the LED included several OSFs around the regrown GaN mesa. While processing the device, dry etching was unnecessary for exposing the n-GaN underlying layer in order to form the n-type Ohmic contacts. This could be attributed to the fact that the n-GaN template layer with an electron concentration of around 8 × 10¹8/cm³ was exposed after the removal of the SiO2 mask layer. With an injection current of 20 mA, GaN-based LEDs with OSFs exhibited a 21% enhancement in light output compared with those that have vertical sidewall facets. The enhancement is attributed to the fact that photons extracted from OSFs can reduce internal absorption loss.