Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics.

This paper reports an array-designed C84-embedded Si substrate fabricated using a controlled self-assembly method in an ultra-high vacuum chamber. The characteristics of the C84-embedded Si surface, such as atomic resolution topography, local electronic density of states, band gap energy, field emission properties, nanomechanical stiffness, and surface magnetism, were examined using a variety of surface analysis techniques under ultra, high vacuum (UHV) conditions as well as in an atmospheric system. Experimental results demonstrate the high uniformity of the C84-embedded Si surface fabricated using a controlled self-assembly nanotechnology mechanism, represents an important development in the application of field emission display (FED), optoelectronic device fabrication, MEMS cutting tools, and in efforts to find a suitable replacement for carbide semiconductors. Molecular dynamics (MD) method with semi-empirical potential can be used to study the nanoindentation of C84-embedded Si substrate. A detailed description for performing MD simulation is presented here. Details for a comprehensive study on mechanical analysis of MD simulation such as indentation force, Young's modulus, surface stiffness, atomic stress, and atomic strain are included. The atomic stress and von-Mises strain distributions of the indentation model can be calculated to monitor deformation mechanism with time evaluation in atomistic level.

Investigation of fullerene embedded silicon surfaces with scanning probe microscopy.

This study examines the intramolecular structures of individual fullerene molecules on a Si(111)-7 x 7 surface using an ultra-high vacuum scanning tunneling microscope. This study also discusses possible configurations of fullerene molecules with related orientations and electronic states of fullerene. A self-assembled layer of fullerene on a Si(111) surface is produced using special annealing treatments. The resulting electronic states and band gap energy can be estimated from I-V curves. Finally the field emission parameters, such as turn-on field and field enhancement factor beta, are determined using a traditional detecting system.