Jet Electrochemical Micromilling of Ti-6Al-4V Using NaCl-Ethylene Glycol Electrolyte.

Titanium alloys are widely used in aerospace and biomedicine because of their excellent mechanical characteristics, but these properties also make such alloys difficult to cut. Jet electrochemical micromilling (JEMM) is based on the principle of electrochemical anodic dissolution; it has some inherent advantages for the machining of titanium alloy microstructures. However, titanium oxidizes readily, forming an oxide film that impedes a uniform dissolution during electrochemical machining. Therefore, a high voltage and an aqueous NaCl electrolyte are usually used to break the oxide film, which can lead to severe stray corrosion. To overcome this problem, the present study investigated the JEMM of Ti-6Al-4V using a NaCl-ethylene glycol (NaCl-EG) electrolyte. Electrochemical testing showed that Ti-6Al-4V exhibits a better corrosion resistance in the NaCl-EG electrolyte compared to the aqueous NaCl electrolyte, thereby reducing stray corrosion. The localization and surface quality of the grooves were enhanced significantly when using JEMM with a NaCl-EG electrolyte. A multiple-pass strategy was adopted during JEMM to improve the aspect ratio, and the effects of the feed depth and number of passes on the multiple-pass machining performance were investigated. Ultimately, a square annular microstructure with a high geometric dimensional consistency and a smooth surface was obtained via JEMM with multiple passes using the optimal parameters.

Closed-loop process for selective leaching and recovery of palladium from spent auto-exhaust catalysts using iodotrihalide ionic liquids.

The recovery of palladium from spent auto-exhaust catalysts (SAE-catalysts) is of great significance for resource sustainability. Herein, we proposed an efficient closed-loop leaching and recovery method for palladium from SAE-catalysts using iodotrihalide ionic liquids (ILs). Recovery design was explored aimed at green leaching and process simplification. Iodotrihalide ILs exhibited exceptional performance in terms of leaching efficiency (99.1%), selectivity (selectivity > 6.8 ×103) and reusability (over 6 cycles). The mechanism study revealed that excellent leaching performance was attributed to the redox and complexation. Additionally, the chemical reaction-controlled model was best suited to describe the leaching process. Notably, under the optimal conditions determined by the response surface methodology, a high-purity Pd(II) solution (purity > 99.8%) was obtained. More significantly, it was ideal for practical applications due to the low-viscosity (36.0 cP), mild (55 °C) and one-step leaching and recovery. In conclusion, this work provides an eco-friendly method for recovering palladium from SAE-catalysts with its non-high corrosiveness and low environmental impact.

Air-Stable and High-Performance Unipolar n-Type Conjugated Semiconducting Polymers Prepared by a "Strong Acceptor-Weak Donor" Strategy.

Unipolar n-type conjugated polymer materials with long-term stable electron transport upon direct exposure to the air atmosphere are very challenging to prepare. In this study, three unipolar n-type donor-acceptor (D-A) conjugated polymer semiconductors (abbreviated as PNVB, PBABDFV, and PBAIDV) were successfully developed through a "strong acceptor-weak donor" strategy. The weak electron donation of the donor units in all three polymers successfully lowered the molecular energy levels by the acceptor units that strongly attracted electrons. Cyclic voltammetry demonstrated that all three polymers had low highest occupied molecular orbital and lowest unoccupied molecular orbital energy levels near -6.0 and -4.0 eV, respectively. These results were consistent with the density functional theory calculations. The as-prepared polymers were then used to manufacture organic field-effect transistor (OFET) devices in bottom-gate/top-contact (BG/TC) configuration without any packaging protection. As expected, all devices exhibited unipolar electron transport properties. PBABDFV-based devices showed excellent field-effect performance and air stability, beneficial for straight-line molecular chain and closest π-π stacking distance to prevent water vapor and oxygen from diffusion into the active layer. This led to a maximum electron mobility (µe,max) of 0.79 cm2 V-1 s-1 under air conditions. In addition, 0.50 cm2 V-1 s-1 was still maintained after 27 days of storage in ambient environment. The near-ideal transfer curve of the PBABDFV-based OFET device in BG/TC configuration under vacuum was obtained with average mobility reliability factor (rave) reaching 88%.

Flexible, Low-Voltage, and n-Type Infrared Organic Phototransistors with Enhanced Photosensitivity via Interface Trapping Effect.

Flexible and low-voltage near-infrared organic phototransistors (NIR OPTs) were prepared with a low-band gap donor-acceptor conjugated polymer as the semiconductor layer and n-octadecyl phosphonic acid modified anodic alumina (AlO x/ODPA) as the insulating layer. The phototransistors exhibit the typical n-type transistor characteristics at a voltage below 5 V. The photosensitivity of phototransistors can be enhanced by regulating the packing densities of the ODPA self-assembled monolayers and forming different trap states. The enhanced OPTs exhibit good photosensitivity to 808-980 nm NIR with the photocurrent/dark current ratio and photoresponsivity as high as 5 × 103 and 20 mA W-1, respectively, benefiting from the charge-trapping effect at the AlO x/ODPA interface. The OPTs also present a fast optical switching speed of 20/30 ms and an excellent mechanical flexibility. The outstanding performance of the NIR OPTs indicates that the development of wearable electronics is, indeed, possible.