Therapeutic strategies for retention of cranioplasty titanium mesh after mesh exposure.

BACKGROUND: Titanium mesh exposure after cranioplasty is a possible complication and is usually managed by mesh removal and flap transfer, but the advantages of the rigid prosthesis are then lost. This study aimed to present our experience with negative pressure wound therapy combined with soft tissue dilation for retaining the titanium mesh in patients with mesh exposure after cranioplasty. METHODS: This retrospective study included patients treated between 01/2016 and 05/2019 at the Jiangyin Hospital Affiliated to Southeast University School of Medicine. The wound was cleaned, and a cystic space was created for the tissue dilator, which was used with a self-designed negative pressure dressing. After the target dilation was achieved, the repair was conducted while retaining the titanium mesh. RESULTS: Eight patients were included (seven males and one female; 53.6 ± 8.8 (range, 43-65) years of age). The exposed mesh area ranged from 1 × 1 to 4 × 5.5 cm. The thinning scalp area around the exposed mesh ranged from 3.6 × 3.8 to 4 × 5.5 cm. Five patients had positive wound cultures and received sensitive antibiotics. The dilator embedding time was 20-28 days. The time of negative pressure wound therapy was 25-33 days. The hospital stay was 30-41 days. Primary wound healing was achieved in all eight patients. There were no signs of recurrence after 6-18 months of follow-up. The cranial CT scans were unremarkable. CONCLUSIONS: Negative pressure wound therapy combined with soft tissue dilation for exposed titanium mesh after cranioplasty might help retain the titanium mesh.

LRTM effect and electronic crystal imaging on silicon surface.

Some interesting phenomena have been observed in the laser reflecting Talbot magnification (LRTM) effect discovered at first, in which the high-order nonlinear imaging and the plasmonic structures imaging occur. The LRTM effect images were obtained on the 1D and 2D photonic crystals fabricated by using nanosecond pulsed laser etching on silicon surface, where the high-order nonlinear imaging on the 1D and 2D photonic crystals was observed interestingly. The theory result is consistent with the experimental one, which exhibits that the suitable wave-front shape of injection beam selected in optical route can effectively enlarge the magnification rate and elevate the resolution of the Talbot image. Especially the periodic plasmonic structures on silicon surface have been observed in the LRTM effect images, which have a good application in the online detection of pulsed laser etching process. The temporary reflecting Talbot images exhibit that the electrons following with photonic frequency float on plasma surface to form electronic crystal observed on silicon at first, which is similar with the Wigner crystal structure.

[Advances in the Action Mechanism of Classical Pathways IKKα and IKKß in Hematological Tumors and Drug Therapy Blocking Their Effect--Review].

In recent years, it is found that the classical IKKα and IKKß pathway were closely relates with hematological tumors, except the classical pathogenesis, moreover the classical IKKß pathway is deeply studied. The studies indicated that the IKKßis activated to phosphorylate the NF-κB through multiple cascades under the effect of extracellular IL-6, TNF-α and other stimulating factors. At the cellular level, the classical IKKßcan promote the tumor cell survival and proliferation, reduce the cell apoptosis, and promote the angiogenesis and cell transfer. Although the classical IKKα plays a role in regulating IKKß activity, but its role in non-classical pathway is more prominent. This review briefly summarizes the latest advance of researches on the pathogenesis of hematological malignancies in term of IKKα and IKKßpathway, so as to provide the theoretic basis for deeply understanding and studying the pathogenesis of hematologic tumors. At present, blocking the classical IKKα and IKKß pathway has become a new target for treatment of hematological tumors, moreover, some specific inhibitor for IKKα and IKKßpathway have been developed, for example, LY2409881, BMS 345541 and so on. Most of these drugs are in clinical trials and display some good anti-tumor effects.

[Research Progress on Immune Mechanism of Immune Thrombocytopenia--Review].

Abstract　　Immune thrombocytopenia (ITP) is an acquired autoimmune hemorrhagic disease, although the ITP pathogenesis is completely unknown, but in terms of the current view, the immune tolerance is main reason for the onset of ITP. In recent years, more and more immune cell subsets, cytokines and the new approacher were found to be closely related with the ITP, such as saliva acid, B cell activating factor, dysfunction of regulatory B cells and Th1/Th2 balance drift, CD4+ CD25+ T cell function defect, IL-23/Th17 pathway regulation, etc., In this paper, the latest research progress on the immune pathogenesis of ITP are reviewed, so as to provide theoretical basis and research direction for further understanding the pathogenesis of ITP.

Retraction Note: Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure.

RETRACTION NOTE: The Editor has retracted this article [1] due to significant overlap in text and figures with a previous article published in another journal [2]. The authors do not agree with the retraction.

Curved surface effect and manipulation of electronic states in nanosilicon.

It is interesting in low-dimensional nanostructures of silicon that the two quantum effects play different roles in nanosilicon emission, in which the quantum confinement (QC) effect opens band gap and makes emission shift into shorter wavelengths (blue-shift) as the size of the nanocrystals is reduced; however the breaking symmetry originating from impurities on nanosilicon produces the localized electronic states in band gap and makes emission shift into longer wavelengths (red-shift). The results of experiment and calculation demonstrated that the energy levels of nanosilicon can be manipulated through these quantum effects, where the curved surface (CS) effect of impurity atoms bonding on nanosilicon is important in breaking symmetry of nanosilicon system. Here, the CS effect plays an important role on impuritied nanosilicon in smaller scale with larger surface curvature, in which a few characteristic parameters have been found to describe the breaking symmetry of nanosilicon system, such as bonding angle and projecting length of bonds on curved surface. More interesting, the coupling ways between the QC effect and the CS effect determinate the levels position of localized states in band gap and manipulate emission wavelength, where a few new phenomena were explored.

Localized states and quantum effect of photo-generated carriers in photovoltaic system.

We have fabricated the multiple nanolayers impuritied on silicon pillars for Si solar cells to pick up photons in ultraviolet and infrared region of solar spectra, in which the localized states originated from nanosilicon doped with oxygen are built to avoid Auger recombination, and some interesting quantum phenomena in the localized states have been observed. The quantum effect of photo-generated carriers has been observed in I-V curve measurement on the photovoltaic sample prepared in oxygen by using nanosecond pulsed laser. More interesting, the twin states of quantum vibration are measured in the localized states originated from the impuritied nanosilicon, which provides a stable reservoir for electrons in the photovaltaic system. It should be noted that the amplitude change of the quantum vibration occurs under magnetic field with 0.33T on the sample prepared in oxygen, owing to the electron spin in the localized states. The photoluminescence (PL) spectra measured from 300 nm to 1700 nm exhibit the localized states in various regions in the photovoltaic system, in which the electrons can stand in the localized states with longer lifetime to be uneasy into Auger recombination.

Electronic States of Nanocrystal Doped with Oxygen and Visible Emission on Black Silicon Prepared by ns-Laser.

We fabricated the black silicon (BS) structures by using nanosecond pulsed laser (ns-laser) in vacuum or in oxygen environment. It is interesting that the enhanced visible emission occurs in the photoluminescence (PL) spectra measured at room temperature and at lower temperature on the BS surface after annealing, in which lasing near 600 nm is observed on the BS surface with Purcell cavity structure. It is demonstrated in the PL spectra analysis that the electronic states in the nanocrystal doped with oxygen play a main role in the visible emission on the BS surface. The origin of the visible emission near 400, 560, or 700 nm is univocally revealed in the PL spectra analysis. A visible emission is promising for the development of the white light device on the BS.

Electronic states of defect with impurity and infrared emission on black silicon prepared by an ns-laser.

It is found that the optimum annealing temperature is about 1000°C for the infrared emission of defect states at room temperature on black silicon (BS) prepared by using a nanosecond-pulsed laser. In addition, it is observed that the suitable annealing time is 6∼8 min at 1000°C for the emission on the BS. The crystallizing proceeding in annealing on the BS can be used to explain the above annealing effect. It is interesting that the emission band becomes intensive and broader on the BS prepared in oxygen atmosphere than that prepared in vacuum in the analysis of photoluminescence spectra, where the electronic states localized at the defects from D1 to D4 doped with oxygen play an important role in the emission with the broader band which are obviously enhanced in the room temperature.

Lasing with Pumping Levels of Si Nanocrystals on Silicon Wafer.

It is reported that the silicon nanocrystals (NCs) are fabricated by using self-assembly growth method with the annealing and the electron beam irradiation processes in the pulsed laser depositing, on which the visible lasing with higher gain (over 130 cm-1) and the enhanced emission in optical telecommunication window are measured in photoluminescence (PL). It is interesting that the enhanced visible electroluminescence (EL) on silicon nanocrystals (Si-NCs) is obviously observed by the naked eyes, and the light-emitting diode (LED) of the Si-NCs with external quantum efficiency of 20% is made on silicon chip in our laboratory. A four-level system is built for emission model in nanosilicon, in which the PL and EL measurement and transmission electron microscope (TEM) analysis demonstrate that the pumping levels with shorter lifetime from the rising energy of the Si quantum dots due to the quantum confinement effect occur, and the electronic localized states with longer lifetime owing to impurities bonding on Si-NCs surface are formed in the crystallized process to produce the inversion of population for lasing, where the optical gain is generated.

Enhanced Emission of Quantum System in Si-Ge Nanolayer Structure.

It is very interesting that the enhanced peaks near 1150 and 1550 nm are observed in the photoluminescence (PL) spectra in the quantum system of Si-Ge nanolayer structure, which have the emission characteristics of a three-level system with quantum dots (QDs) pumping and emission of quasi-direct-gap band, in our experiment. In the preparing process of Si-Ge nanolayer structure by using a pulsed laser deposition method, it is discovered that the nanocrystals of Si and Ge grow in the (100) and (111) directions after annealing or electron beam irradiation. The enhanced PL peaks with multi-longitudinal-mode are measured at room temperature in the super-lattice of Si-Ge nanolayer quantum system on SOI.

Emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional structure.

In our experiment, it was observed that the emission of direct-gap band in germanium with Ge-GeSn layers on one-dimensional (1D) structure. The results of experiment and calculation demonstrate that the uniaxial tensile strain in the (111) and (110) direction can efficiently transform Ge to a direct bandgap material with the bandgap energy useful for technological application. It is interested that under the tensile strain from Ge-GeSn layers on 1D structure in which the uniaxial strain could be obtained by curved layer (CL) effect, the two bandgaps EΓg and ELg in the (111) direction become nearly equal at 0.83 eV related to the emission of direct-gap band near 1500 nm in the experiments. It is discovered that the red-shift of the peaks from 1500 nm to 1600 nm occurs with change of the uniaxial tensile strain, which proves that the peaks come from the emission of direct-gap band.

[Clincial effect of 3D printing-assisted minimal invasive surgery through a small incision lateral to the rectus abdominis for pelvic fracture].

OBJECTIVE: To evaluate the clinical effect of 3D printing-assisted minimal invasive surgery on pelvic fracture by plate internal fixation through a small incision lateral to the rectus abdominis. METHODS: This retrospective study was conducted among 50 patients with pelvic fracture undergoing anteromedial plate internal fixation between September, 2013 and June, 2015. Thin-layer computed tomography scan data of the patients were input into Mimics software in DICOM format for 3D editing and virtual surgery before the operation. The pelvic model was created by 3D printing. Simulated operation was performed to design the optimum location of the plate screw, prelflex of the plate, screw length measurement and screwing approach. Diaplasis and internal fixation were performed through the extraperitoneal space with a small incision lateral to the rectus abdominis. Matta standard was employed for diaplasis evaluation, and Majeed assessment was used for function evaluation 6 months after the operation. RESULTS: According to Matta standard, excellent and good diaplases were achieved in 96% of the cases, as compared with 94% according to Majeed assessment. Radiographic examination showed a good consistency between the internal fixation and simulated operation. No screw entry into the hip joint cavity occurred in these cases. The mean operation time was 127 min in these cases with a mean intraoperative blood loss of 728 mL and a mean incision length of 8.4 cm. Based on the postoperative VAS score, 12 patients reported severe pain, 28 reported moderate pain and 10 reported mild pain. All the patients were advised for early functional exercise after the operation and clinical healing was achieved in a mean of 8 weeks. CONCLUSIONS: 3D printing with simulated operation can improve the accuracy and safety of the operation. Preoperative simulation of plate preflex and screw length measurement can shorten the operation time. A small incision lateral to the rectus abdominis allows minimally invasive operation for pelvic fractures.

Silicon nanocrystal growth under irradiation of electron beam.

In our experiment, it was observed that silicon nanocrystal rapidly grows with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition, and shape of silicon nanocrystal is usually sphere in smaller nanoscale with less exposure time under electron beam, in which the quantum dots are prepared in nanoscale near 3 nm. In the electron interaction process, it was investigated that the various crystals structures in different orientations occur in the same time and the condensed structures of silicon nanocrystal are changed with different impurity atoms in silicon film.

Magic electron affection in preparation process of silicon nanocrystal.

It is very interesting that magic electron affection promotes growth of nanocrystals due to nanoscale characteristics of electronic de Broglie wave which produces resonance to transfer energy to atoms. In our experiment, it was observed that silicon nanocrystals rapidly grow with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition (PLD), and silicon nanocrystals almost occur in sphere shape on smaller nanocrystals with less irradiation time of electron beam. In the process, it was investigated that condensed structures of silicon nanocrystals are changed with different impurity atoms in silicon film, in which localized states emission was observed. Through electron beam irradiation for 15 min on amorphous Si film doped with oxygen impurity atoms by PLD process, enhanced photoluminescence emission peaks are observed in visible light. And electroluminescence emission is manipulated into the optical communication window on the bigger Si-Yb-Er nanocrystals after irradiation of electron beam for 30 min.

[Influence of the depth of retained denatured dermis on the survival rate of grafted skin in burn swine with deep partial-thickness burn].

OBJECTIVE: To explore the influence of the thickness of retained denatured dermis on the survival rate of grafted skin in swine with deep partial-thickness burn. METHODS: Four deep partial-thickness wounds were reproduced respectively on both sides of spine in 7 Chinese domestic pigs. The wounds of 6 pigs were divided into 0.25, 0.50, 0.75, and 1.00 mm groups with 12 wounds in each group according to the random number table. Tangential excision and auto-skin grafting were performed. Before the tangential excision, 1 tissue specimen was harvested from the center of each remaining wound for the estimation of the depth of burn, and histological observation was done. After the tangential excision, 1 tissue specimen was harvested from the area near the center of each wound for the measurement of the depth of retained denatured dermis with histological examination. The 8 wounds of one pig were set as the control group, and the operation was done, and then they were treated with exposure treatment after biopsy specimens were taken with above-mentioned method. The general condition of wounds in 5 groups was observed from immediately after injury to post injury month (PIM) 3. On post injury day (PID) 7, the survival rate of grafted skin was observed in 0.25, 0.50, 0.75, and 1.00 mm groups. Wound healing time was recorded. At PIM 3, the specimens were harvested from the wounds of 5 groups, and their ultra microstructures were observed by transmission electron microscope. Data were processed with rank-sum test, one-way analysis of variance, and LSD test. RESULTS: The depth of the burn tissue was (1.120 ± 0.211) mm. The depths of retained denatured dermis in 0.25, 0.50, 0.75, and 1.00 mm groups were respectively (0.830 ± 0.031), (0.701 ± 0.010), (0.382 ± 0.031), and (0.141 ± 0.040) mm. At PID 8, all grafted skin in 0.25 and 0.50 mm groups became necrotic; most grafted skin in 0.75 mm group was necrotic; most grafted skin in 1.00 mm group survived with only a few became necrotic and separated from the wounds. The scabs were gradually separated from the wounds of control group. On PID 15, the grafted skin which did not survive in 0.25, 0.50, and 0.75 mm groups was gradually separated from the wounds with exudate forming scab on the surface in varying degrees, while the wounds in 1.00 mm group were all healed, and the incidence of scabs formation was highest in control group. At PIM 3, scar contraction was found in 0.25, 0.50, 0.75 mm groups and control group, while no obvious scar was observed in 1.00 mm group. There were statistically significant differences in the survival rate of grafted skin in 0.25, 0.50, 0.75, and 1.00 mm groups (χ(2) = 19.421, P < 0.001). The survival rate was the highest in 1.00 mm group [70% (60%, 80%)], while the survival rate was 20% (0, 30%) in 0.75 mm group, and it was in both 0.25 and 0.50 mm groups with non-survival of all the grafted skin. There were statistically significant differences in the wound healing time among 5 groups (F = 41.450, P < 0.001). The wound healing time in 0.25 and 0.50 mm groups were respectively (18.2 ± 1.5), and (18.7 ± 2.3) d, not statistically significant different from that of control group [(18.4 ± 1.7) d, P values both above 0.05]. The wound healing time in 0.75 mm group [(14.9 ± 2.6) d] was significantly different from those of 0.25, 0.50 mm groups and control group (P values all below 0.01). The wound healing time in 1.00 mm group [(9.5 ± 1.2) d] was significantly shorter compared with that of the other 4 groups (P values all below 0.01). Before tangential excision, the zone of infiltration of the inflammatory cells was observed in the deep dermis of wounds in 5 groups. After tangential excision and before auto-skin grafting, the depth from the fault surface to the zone of infiltration of the inflammatory cells varied in 0.25, 0.50, 0.75, and 1.00 mm groups while more inflammatory cells were observed in control group. At PIM 3, many fibroblasts were observed in the dermis of wounds in 1.00 mm group with abundant rough endoplasmic reticulum and basically intact organelles. CONCLUSIONS: Performing autologous skin grafting on deep partial-thickness burn, in which the depth of retained denatured dermis was 0.10 mm, may help regenerate dermal function and alleviate scar formation.

Thymosin beta4 and AcSDKP inhibit the proliferation of HL-60 cells and induce their differentiation and apoptosis.

Our previous works have shown that bone marrow stromal cells secrete thymosin beta4 (Tbeta4) and AcSDKP. Tbeta4 and AcSDKP are existed in the conditioned medium of bone marrow endothelial cells. They exerted inhibitory effects on hematopoietic cells and then had protective effect on the early hematopoietic cells, which were cultured in the presence of hematopoietic stimulators. Thymosin beta4 consists of 43 peptides with a molecular weight of 4963. It contains at its N-terminal end the sequence of the acetylated tetrapeptide Ac-N-Ser-Asp-Lys-Pro (AcSDKP). This study was performed to evaluate the effect of Tbeta4 and AcSDKP on the growth of HL-60 cells. It was showed that Tbeta4 (10(-11)-10(-7)mol/L) and AcSDKP (10(-11)-10(-7)mol/L) had the dose-dependent inhibitory effect on the proliferation of HL-60 cells. Based on cell morphology and NBT reduction, Tbeta4 and AcSDKP induced differentiation of HL-60 cells. Morphologic and DNA fragment analysis proved that Tbeta4 and AcSDKP induced apoptosis of HL-60 cells. In order to analyze the mechanism of the effects of Tbeta4 and AcSDKP, intracellular free Ca(2+) concentration ([Ca(2+)](i)) of HL-60 leukemic cells was tested and Atlas cDNA Expression Array was performed. The results showed that Tbeta4 and AcSDKP could increased [Ca(2+)](i) by stimulating the release of Ca(2+) from intracellular Ca(2+) pool. Moreover, AcSDKP could also elicit a potent extracelluar calcium influx in HL-60 cells. Tbeta4 could also change apoptotic-related gene expression in leukemic cells, and resulted in the inhibition of proliferation and induction of differentiation and apoptosis of leukemic cells.

Intracellular localisation of human HIF-1 alpha hydroxylases: implications for oxygen sensing.

Hypoxia-inducible factor1 (HIF-1) is an essential transcription factor for cellular adaptation to decreased oxygen availability. In normoxia the oxygen-sensitive alpha-subunit of HIF-1 is hydroxylated on Pro564 and Pro402 and thus targeted for proteasomal degradation. Three human oxygen-dependent HIF-1 alpha prolyl hydroxylases (PHD1, PHD2, and PHD3) function as oxygen sensors in vivo. Furthermore, the asparagine hydroxylase FIH-1 (factor inhibiting HIF) has been found to hydroxylate Asp803 of the HIF-1 C-terminal transactivation domain, which results in the decreased ability of HIF-1 to bind to the transcriptional coactivator p300/CBP. We have fused these enzymes to the N-terminus of fluorescent proteins and transiently transfected the fusion proteins into human osteosarcoma cells (U2OS). Three-dimensional 2-photon confocal fluorescence microscopy showed that PHD1 was exclusively present in the nucleus, PHD2 and FIH-1 were mainly located in the cytoplasm and PHD3 was homogeneously distributed in cytoplasm and nucleus. Hypoxia did not influence the localisation of any enzyme under investigation. In contrast to FIH-1, each PHD inhibited nuclear HIF-1 alpha accumulation in hypoxia. All hydroxylases suppressed activation of a cotransfected hypoxia-responsive luciferase reporter gene. Endogenous PHD2mRNA and PHD3mRNA were hypoxia-inducible, whereas expression of PHD1mRNA and FIH-1mRNA was oxygen independent. We propose that PHDs and FIH-1 form an oxygen sensor cascade of distinct subcellular localisation.

Expression of Thymosin beta4 in Murine Bone Marrow Endothelial Cells, HL-60 Cells and Human Peripheral Blood Mononuclear Cells.

To investigate the relationship between the growth situation of the cells and the expression level of thymosin beta4, the specific primer of thymosin beta4 was selected to test the expression of thymosin-beta gene in murine bone marrow endothelial cells in different proliferation states and in HL-60 cells and peripheral blood mononuclear cells by RT-PCR. The results showed that the expression level of thymosin beta4 in the murine bone marrow endothelial cells with active proliferation was high, otherwise it was low. The thymosin beta4 gene expression level was higher in HL-60 cells than that in human peripheral blood mononuclear cells. It was suggested that the expression level of thymosin beta4 mRNA is closely related to cell growth.