Coexistence of distinct skyrmion phases observed in hybrid ferromagnetic/ferrimagnetic multilayers.

Materials hosting magnetic skyrmions at room temperature could enable compact and energetically-efficient storage such as racetrack memories, where information is coded by the presence/absence of skyrmions forming a moving chain through the device. The skyrmion Hall effect leading to their annihilation at the racetrack edges can be suppressed, for example, by antiferromagnetically-coupled skyrmions. However, avoiding modifications of the inter-skyrmion distances remains challenging. As a solution, a chain of bits could also be encoded by two different solitons, such as a skyrmion and a chiral bobber, with the limitation that it has solely been realized in B20-type materials at low temperatures. Here, we demonstrate that a hybrid ferro/ferri/ferromagnetic multilayer system can host two distinct skyrmion phases at room temperature, namely tubular and partial skyrmions. Furthermore, the tubular skyrmion can be converted into a partial skyrmion. Such systems may serve as a platform for designing memory applications using distinct skyrmion types.

Microscopic Origin of Magnetization Reversal in Nanoscale Exchange-Coupled Ferri/Ferromagnetic Bilayers: Implications for High Energy Density Permanent Magnets and Spintronic Devices.

Giant exchange bias shifts of several Tesla have been reported in ferrimagnetic/ferromagnetic bilayer systems, which could be highly beneficial for contemporary high energy density permanent magnets and spintronic devices. However, the lack of microscopic studies of the reversal owing to the difficulty of measuring few nanometer-wide magnetic structures in high fields precludes the assessment of the lateral size of the inhomogeneity in relation to the intended application. In this study, the magnetic reversal process of nanoscale exchange-coupled bilayer systems, consisting of a ferrimagnetic TbFeCo alloy layer and a ferromagnetic [Co/Ni/Pt] N multilayer, was investigated. In particular, minor loop measurements, probing solely on the reversal characteristics of the softer ferromagnetic layer, reveal two distinct reversal mechanisms, which depend critically on the thickness of the ferromagnetic layer. For thick layers, irreversible switching of the macroscopic minor loop is observed. The underlying microscopic origin of this reversal process was studied in detail by high-resolution magnetic force microscopy, showing that the reversal is triggered by in-plane domain walls propagating through the ferromagnetic layer. In contrast, thin ferromagnetic layers show a hysteresis-free reversal, which is nucleation-dominated due to grain-to-grain variations in magnetic anisotropy of the Co/Ni/Pt multilayer and an inhomogeneous exchange coupling with the magnetically hard TbFeCo layer, as confirmed by micromagnetic simulations.

Understanding the microstructural evolution and mechanical properties of transparent Al-O-N and Al-Si-O-N films.

Optically transparent, colorless Al-O-N and Al-Si-O-N coatings with discretely varied O and Si contents were fabricated by reactive direct current magnetron sputtering (R-DCMS) from elemental Al and Si targets and O2 and N2 reactive gases. The Si/Al content was adjusted through the electrical power on the Si and Al targets, while the O/N content was controlled through the O2 flow piped to the substrate in addition to the N2 flow at the targets. The structure and morphology of the coatings were studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM), while the elemental composition was obtained from Rutherford backscattering spectrometry (RBS) and heavy ion elastic recoil detection analysis (ERDA). The chemical states of the elements in the coatings were analyzed by X-ray photoelectron spectroscopy (XPS). Based on analytical results, a model describing the microstructural evolution of the Al-O-N and also previously studied Al-Si-N [1, 2, 3, 4] coatings with O and Si content, respectively, is established. The universality of the microstructural evolution of these coatings with the concentration of the added element is attributed to the extra valence electron (e-) that must be incorporated into the AlN wurtzite host lattice. In the case of Al-O-N, this additional valence charge arises from the e - acceptor O replacing N in the AlN wurtzite lattice, while the e - donor Si substituting Al fulfills that role in the Al-Si-N system. In view of future applications of ternary Al-O-N and quaternary Al-Si-O-N transparent protective coatings, their mechanical properties such as residual stress (σ), hardness (HD) and Young's modulus (E) were obtained from the curvature of films deposited onto thin substrates and by nanoindentation, respectively. Moderate compressive stress levels between -0.2 and -0.5 GPa, which suppress crack formation and film-substrate delamination, could be obtained together with HD values around 25 GPa.

Atomic contact potential variations of Si(111)-7 x 7 analyzed by Kelvin probe force microscopy.

We studied atomic contact potential variations of Si(111)-7 x 7 by Kelvin probe force microscopy with the amplitude modulation technique at the second resonance of a silicon cantilever. Enhanced sensitivity due to the high mechanical quality factor in ultra-high vacuum enabled local contact potential difference (LCPD) measurements of individual adatoms. The contrast of the measured LCPD map became stronger by reducing the tip-sample distance, and the averaged LCPD value shifted to more negative. The short-range interaction, arising from the covalent bonding interactions, strongly affects the LCPD measurement. Theoretical calculations indicate that the amplitude modulation method has a higher sensitivity than the frequency modulation method in practical cases. The tip-sample distance dependence of LCPD was investigated by numerical calculations.