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1.
Lab Chip ; 7(11): 1469-74, 2007 Nov.
Artigo em Inglês | MEDLINE | ID: mdl-17960273

RESUMO

Microfluidic diaphragm valves and pumps capable of surviving conditions required for unmanned spaceflight applications have been developed. The Pasteur payload of the European ExoMars Rover is expected to experience temperatures ranging between -100 degrees C and +50 degrees C during its transit to Mars and on the Martian surface. As such, the Urey instrument package, which contains at its core a lab-on-a-chip capillary electrophoresis analysis system first demonstrated by Mathies et al., requires valving and pumping systems that are robust under these conditions before and after exposure to liquid samples, which are to be analyzed for chemical signatures of past or present living processes. The microfluidic system developed to meet this requirement uses membranes consisting of Teflon and Teflon AF as a deformable material in the valve seat region between etched Borofloat glass wafers. Pneumatic pressure and vacuum, delivered via off-chip solenoid valves, are used to actuate individual on-chip valves. Valve sealing properties of Teflon diaphragm valves, as well as pumping properties from collections of valves, are characterized. Secondary processing for embossing the membrane against the valve seats after fabrication is performed to optimize single valve sealing characteristics. A variety of different material solutions are found to produce robust devices. The optimal valve system utilizes a membrane of mechanically cut Teflon sandwiched between two thin spun films of Teflon AF-1600 as a composite "laminated" diaphragm. Pump rates up to 1600 nL s(-1) are achieved with pumps of this kind. These high pumping rates are possible because of the very fast response of the membranes to applied pressure, enabling extremely fast pump cycling with relatively small liquid volumes, compared to analogous diaphragm pumps. The developed technologies are robust over extremes of temperature cycling and are applicable in a wide range of chemical environments.


Assuntos
Cáusticos , Temperatura Baixa , Microfluídica/instrumentação , Politetrafluoretileno , Desenho de Equipamento
2.
Nano Lett ; 6(5): 942-7, 2006 May.
Artigo em Inglês | MEDLINE | ID: mdl-16683830

RESUMO

We describe the fabrication and characterization of a nanoelectromechanical (NEM) switch based on carbon nanotubes. Our NEM structure consists of single-walled nanotubes (SWNTs) suspended over shallow trenches in a SiO(2) layer, with a Nb pull electrode beneath. The nanotube growth is done on-chip using a patterned Fe catalyst and a methane chemical vapor deposition (CVD) process at 850 degrees C. Electrical measurements of these devices show well-defined ON and OFF states as a dc bias up to a few volts is applied between the CNT and the Nb pull electrode. The CNT switches were measured to have speeds that are 3 orders of magnitude higher than MEMS-based electrostatically driven switches, with switching times down to a few nanoseconds, while at the same time requiring pull voltages less than 5 V.


Assuntos
Nanotubos de Carbono/química , Eletroquímica , Microscopia Eletrônica de Varredura , Nanotubos de Carbono/ultraestrutura
3.
Nano Lett ; 5(7): 1469-74, 2005 Jul.
Artigo em Inglês | MEDLINE | ID: mdl-16178259

RESUMO

We have demonstrated Schottky diodes using semiconducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse bias breakdown voltages of greater than -15 V. To decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) potentially comparable to that of the state-of-the-art gallium arsenide solid-state Schottky diodes, in the range of 10(-13) W/ radical Hz.


Assuntos
Microeletrodos , Nanotecnologia/instrumentação , Nanotubos de Carbono/química , Nanotubos de Carbono/ultraestrutura , Platina/química , Semicondutores , Titânio/química , Impedância Elétrica , Eletroquímica/instrumentação , Eletroquímica/métodos , Desenho de Equipamento , Análise de Falha de Equipamento , Teste de Materiais , Nanotecnologia/métodos , Nanotubos de Carbono/análise , Ondas de Rádio
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