Your browser doesn't support javascript.
loading
Mostrar: 20 | 50 | 100
Resultados 1 - 2 de 2
Filtrar
Mais filtros










Base de dados
Intervalo de ano de publicação
1.
Phys Chem Chem Phys ; 25(21): 14918-14927, 2023 May 31.
Artigo em Inglês | MEDLINE | ID: mdl-37199718

RESUMO

As a typical layered oxide material, Li2TiO3 has attracted considerable attention in the energy revolution and military industries, owing to its lithium-rich and "zero-strain" characteristics. However, its phase-transition behavior under high pressure remains unclear. Herein, we report a second-order phase transition from the monoclinic phase to a higher-symmetry phase in nano-polycrystalline Li2TiO3 at 43 GPa by in situ high-pressure Raman experiments and first-principles calculations at 300 K. As validated by the experiments and calculations, the distortion of layered oxide-TiO6 in Li2TiO3 is crucial in the phase transition. By modulating the gap between octahedral-TiO6 layers, we propose a potential Li2TiO3 structural model for improving the electrochemical performance of lithium-ion batteries. Our findings suggest that, based on its high-pressure phase, Li2TiO3 is a promising candidate for layered cathode materials and solid tritium breeding materials for lithium-ion batteries.

2.
J Phys Condens Matter ; 28(4): 045403, 2016 Feb 03.
Artigo em Inglês | MEDLINE | ID: mdl-26751337

RESUMO

Single-crystal B4.3C boron carbide is investigated through the pressure-dependence and inter-relation of atomic distances, optical properties and Raman-active phonons up to ~70 GPa. The anomalous pressure evolution of the gap width to higher energies is striking. This is obtained from observations of transparency, which most rapidly increases around 55 GPa. Full visible optical transparency is approached at pressures of >60 GPa indicating that the band gap reaches ~3.5 eV; at high pressure, boron carbide is a wide-gap semiconductor. The reason is that the high concentration of structural defects controlling the electronic properties of boron carbide at ambient conditions initially decreases and finally vanishes at high pressures. The structural parameters and Raman-active phonons indicate a pressure-dependent phase transition in single-crystal (nat)B4.3C boron carbide near 40 GPa, likely related to structural changes in the C-B-C chains, while the basic icosahedral structure appears to be less affected.

SELEÇÃO DE REFERÊNCIAS
DETALHE DA PESQUISA
...