3D-Printed Soft Temperature Sensors Based on Thermoelectric Effects for Fast Mapping of Localized Temperature Distributions.

We propose a novel design of thermoelectric (TE) effect-based soft temperature sensors for directly monitoring localized subtle temperature stimuli. This design integrates rheology-engineered three-dimensional (3D) printing of high-performance carbon-based TE materials and polymer-based viscoelastic materials with low thermal conductivity. Rheological engineering of carbon nanotube (CNT) TE inks ensures the 3D printing of highly sensitive TE sensing units on directly written 3D soft platforms. Additionally, we pre-dope CNT inks with p- and n-type organic dopants to achieve high sensitivity and a fast response to temperature changes. The introduced 3D soft platforms with low thermal conductivity lead to an efficient thermal gradient on TE sensing units in the out-of-plane direction. Furthermore, encapsulating the temperature sensor array with the same polymer-based materials as the 3D soft platforms facilitates independent detection of localized temperature stimuli by minimizing thermal interaction between sensing units, resulting in precise temperature mapping by localized detection. Our 3D-printed soft temperature sensors exhibit high sensitivity to relatively small temperature changes, with a minimum sensing resolution of 0.1 K within tens of milliseconds. Moreover, the temperature sensor array not only detects localized temperature stimuli by imaging the temperature distribution but also demonstrates remarkable mechanical reliability against repetitive deformation with high accuracy.

High temporal resolution transparent thermoelectric temperature sensors for photothermal effect sensing.

We propose inkjet-printed high-speed and transparent temperature sensors based on the thermoelectric effect for direct monitoring of the photothermal effect. They consist of highly transparent organic thermoelectric materials that allow excellent biocompatibility and sub-ms temporal resolution, simultaneously. Our transparent thermoelectric temperature sensors can be used to advance various photothermal biomedical applications.

Direct patterning of colloidal quantum dots with adaptable dual-ligand surface.

Colloidal quantum dots (QDs) stand at the forefront of a variety of photonic applications given their narrow spectral bandwidth and near-unity luminescence efficiency. However, integrating luminescent QD films into photonic devices without compromising their optical or transport characteristics remains challenging. Here we devise a dual-ligand passivation system comprising photocrosslinkable ligands and dispersing ligands to enable QDs to be universally compatible with solution-based patterning techniques. The successful control over the structure of both ligands allows the direct patterning of dual-ligand QDs on various substrates using commercialized photolithography (i-line) or inkjet printing systems at a resolution up to 15,000 pixels per inch without compromising the optical properties of the QDs or the optoelectronic performance of the device. We demonstrate the capabilities of our approach for QD-LED applications. Our approach offers a versatile way of creating various structures of luminescent QDs in a cost-effective and non-destructive manner, and could be implemented in nearly all commercial photonics applications where QDs are used.

Enhanced Output Performance of All-Solution-Processed Organic Thermoelectrics: Spray Printing and Interface Engineering.

We report two organocompatible strategies to enhance the output performance of all-solution-processed poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thermoelectric generators (TEGs): introducing an additive spray printing process and functionalized polymer interlayers to reduce the module resistance. The spray printing enabled the deposition of 1-µm-thick PEDOT:PSS layers with a high degree of design freedom, resulting in a significantly reduced sheet resistance of 16 Ω sq-1 that is closely related to the thermoelectric output performance. Also, by inserting an ultrathin silane-terminated polystyrene (PS) interlayer between the PEDOT:PSS thermoelectric layers and inkjet-printed Ag interconnects selectively, the contact resistivity extracted by the transmission line method was reduced from 6.02 × 10-2 to 2.77 × 10-2 Ω cm2. We found that the PS interlayers behaved as a thin tunneling layer, which facilitated the carrier injection from the inkjet-printed Ag electrodes into the PEDOT:PSS films by field emission with an effectively lowered energy barrier. The activation energy was also extracted using the Richardson equation, resulting in a reduction of 2.59 ± 0.04 meV after the PS treatment. Scalable plastic-compatible processability and selective interface engineering enabled to demonstrate the flexible 74-leg PEDOT:PSS TEGs exhibiting the open-circuit voltage of 9.21 mV and the output power of 2.23 nW at a temperature difference of 10 K.

Transparent ZnO Thin-Film Deposition by Spray Pyrolysis for High-Performance Metal-Oxide Field-Effect Transistors.

Solution-based metal oxide semiconductors (MOSs) have emerged, with their potential for low-cost and low-temperature processability preserving their intrinsic properties of high optical transparency and high carrier mobility. In particular, MOS field-effect transistors (FETs) using the spray pyrolysis technique have drawn huge attention with the electrical performances compatible with those of vacuum-based FETs. However, further intensive investigations are still desirable, associated with the processing optimization and operational instabilities when compared to other methodologies for depositing thin-film semiconductors. Here, we demonstrate high-performing transparent ZnO FETs using the spray pyrolysis technique, exhibiting a field-effect mobility of ~14.7 cm2 V-1 s-1, an on/off ratio of ~109, and an SS of ~0.49 V/decade. We examine the optical and electrical characteristics of the prepared ZnO films formed by spray pyrolysis via various analysis techniques. The influence of spray process conditions was also studied for realizing high quality ZnO films. Furthermore, we measure and analyze time dependence of the threshold voltage (Vth) shifts and their recovery behaviors under prolonged positive and negative gate bias, which were expected to be attributed to defect creation and charge trapping at or near the interface between channel and insulator, respectively.