Massively parallel direct writing of nanoapertures using multi-optical probes and super-resolution near-fields.

Laser direct-writing enables micro and nanoscale patterning, and is thus widely used for cutting-edge research and industrial applications. Various nanolithography methods, such as near-field, plasmonic, and scanning-probe lithography, are gaining increasing attention because they enable fabrication of high-resolution nanopatterns that are much smaller than the wavelength of light. However, conventional methods are limited by low throughput and scalability, and tend to use electron beams or focused-ion beams to create nanostructures. In this study, we developed a procedure for massively parallel direct writing of nanoapertures using a multi-optical probe system and super-resolution near-fields. A glass micro-Fresnel zone plate array, which is an ultra-precision far-field optical system, was designed and fabricated as the multi-optical probe system. As a chalcogenide phase-change material (PCM), multiple layers of Sb65Se35 were used to generate the super-resolution near-field effect. A nanoaperture was fabricated through direct laser writing on a large-area (200 × 200 mm2) multi-layered PCM. A photoresist nanopattern was fabricated on an 8-inch wafer via near-field nanolithography using the developed nanoaperture and an i-line commercial exposure system. Unlike other methods, this technique allows high-throughput large-area nanolithography and overcomes the gap-control issue between the probe array and the patterning surface.

Quasicrystalline phase-change memory.

Phase-change memory utilizing amorphous-to-crystalline phase-change processes for reset-to-set operation as a nonvolatile memory has been recently commercialized as a storage class memory. Unfortunately, designing new phase-change materials (PCMs) with low phase-change energy and sufficient thermal stability is difficult because phase-change energy and thermal stability decrease simultaneously as the amorphous phase destabilizes. This issue arising from the trade-off relationship between stability and energy consumption can be solved by reducing the entropic loss of phase-change energy as apparent in crystalline-to-crystalline phase-change process of a GeTe/Sb2Te3 superlattice structure. A paradigm shift in atomic crystallography has been recently produced using a quasi-crystal, which is a new type of atomic ordering symmetry without any linear translational symmetry. This paper introduces a novel class of PCMs based on a quasicrystalline-to-approximant crystalline phase-change process, whose phase-change energy and thermal stability are simultaneously enhanced compared to those of the GeTe/Sb2Te3 superlattice structure. This report includes a new concept that reduces entropic loss using a quasicrystalline state and takes the first step in the development of new PCMs with significantly low phase-change energy and considerably high thermal stability.

Ultra-low Energy Phase Change Memory with Improved Thermal Stability by Tailoring the Local Structure through Ag Doping.

Although Sb2Te3, as a candidate material for next-generation memory devices, has attractive properties such as higher operation speed and lower power consumption than Ge2Sb2Te5, its poor stability prevents its application to commercial memory devices. Transition metal dopants provide enhancements in its phase change characteristics, improving both thermal stability and operation energy. However, the enhancement mechanism remains to be sufficiently investigated, and standard properties need to be achieved. Herein, the phase change properties of Sb2Te3 are confirmed to be enhanced by the incorporation of a heavy transition metal element such as Ag. The crystallization temperature increases by nearly 40%, and the operation energy is reduced by approximately 60%. These enhancements are associated with the changes in the local Sb2Te3 structure caused by Ag incorporation. As the incorporated Ag atoms substitute Sb in the Sb-Te octahedron, this turns into a Ag-Te defective tetrahedron with a strong Ag-Te bond that induces distortion in the crystal lattice. The formation of this bond is attributed to the electron configuration of Ag and its fully filled d orbital. Thus, Ag-doped Sb2Te3 is a promising candidate for practical phase change memory devices with high stability and high operation speed.