RESUMO
We have developed a three-dimensional data-acquisition system with which pulse heights from an array of detectors can be multi-scaled with dwell times as short as 31 ns. The main part of the system consists of three ADCs of SAR (Successive Approximation Register) type, a 32 MHz oscillation clock and DRAM (Dynamic Random Access Memory) of 192 Mbyte capacity. The clock time is determined by count the clock pulse generated by 28 bits synchronous counter. Both the pulse height and the time information are stored at an array of DRAM, of 40-bits width, 12-bits for pulse height and 28-bits for clock time. The technique is particularly suitable for experiments such as both double and triple coincidence distributions are required. Virtues of the method are demonstrated by measuring the activity of 14C with a 3-PM liquid scintillation counting system. The computer discrimination together with the MCTS (multi-channel time scaling) technique is applied for efficiency variation method in the analysis.
RESUMO
Correlation effects due to the cascade transition of gamma-rays with gates on the relevant peaks have been studied in activity measurement of 59Fe using the bi-dimensional coincidence counting method. Extrapolation curves were obtained at three gamma gates of 1099.2 keV, 1291.6 keV, and that covering both photo-peaks by a computer discrimination method. Of these extrapolation curves, only that obtained at (950-1350) keV gamma gate shows a linear variation, but those of two single gamma gates are not linearly varied in the high efficiency region. This nonlinearity obtained at the gamma gate of 1099.2 keV photo-peak was caused by the correlation effects due to 1-3 coincidence relation via unobserved 192 keV gamma-ray transitions.
RESUMO
Low-field tunneling magnetoresistance was observed in films of half-metallic CrO2 that were grown by high-pressure thermal decomposition of CrO3. High-temperature annealing treatments modified the intergrain barriers of the as-grown films through surface decomposition of CrO2 into insulating Cr2O3, which led to a threefold enhancement of the low-field magnetoresistance. This enhancement indicates the potential of this simple method to directly control the interface barrier characteristics that determine the magnetotransport properties.
