Optical inhomogeneity and microstructure of ZrO(2) thin films prepared by ion-assisted deposition.

The index inhomogeneity and the microstructure of ZrO(2) films prepared by Ar-ion-assisted deposition are investigated. The results show that as the Ar-ion momentum transferred to the growing film increases, the average refractive index increases, the vacuum-to-air spectral shift becomes almost zero, the sign of relative inhomogeneity transits from negative to positive, and the void fraction of the top layer next to air becomes smaller than that of the bottom one. These optical properties result from the improved packing density and denser outer region next to air. The Ar-ion bombardment also induces the changes in microstructure of ZrO(2) films, such as the preferential (111) orientation of cubic phase, increase in compressive stress, and reduction of surface roughness.

Ion assisted deposition of thermally evaporated Ag and Al films.

Optical, electrical, and microstructural effects of Ar-ion bombardment and Ar incorporation on thermally evaporated Ag and Al thin films are investigated. The results show that as the momentum supplied to the growing films by the bombarding ions per arriving metal atom increases, the refractive index at 632.8 nm increases and the extinction coefficient decreases, lattice spacing expands, grain size decreases, electrical resistivity increases, and trapped Ar increases slightly. In Ag films, stress reverses from tensile to compressive and in Al films compressive stress increases. In the Al films the change in optical constants can be explained by the variation in void volume. The reversal of stress from tensile to compressive in Ag films requires a threshold level of momentum. The increase in electrical resistivity is related to the decrease in grain size and increase in trapped Ar in both types of film. Many of these properties correlate well with the momentum transferred, suggesting that the momentum is an important physical parameter in describing the influence of ion beam on growing thin films and determining the characteristics of thin metal films prepared by ion assisted deposition.

Reactive ion assisted deposition of aluminum oxynitride thin films.

Optical properties, stoichiometry, chemical bonding states, and crystal structure of aluminum oxynitride (AlO(x)N(y)) thin films prepared by reactive ion assisted deposition were investigated. The results show that by controlling the amount of reactive gases the refractive index of aluminum oxynitride films at 550 nm is able to be varied from 1.65 to 1.83 with a very small extinction coefficient. Variations of optical constants and chemical bonding states of aluminum oxynitride films are related to the stoichiometry. From an x-ray photoelectron spectroscopy analysis it is observed that our aluminum oxynitride film is not simply a mixture of aluminum oxide and aluminum nitride but a continuously variable compound. The aluminum oxynitride films are amorphous from an x-ray diffraction analysis. A rugate filter using a step index profile of aluminum oxynitride films was fabricated by nitrogen ion beam bombardment of a growing Al film with backfill oxygen pressure as the sole variation. This filter shows a high resistivity to atmospheric moisture adsorption, suggesting that the packing density of aluminum oxynitride films is close to unity and the energetic ion bombardment densifies the film as well as forming the compound.