Efficient Solar Energy Conversion Using CaCu3Ti4O12 Photoanode for Photocatalysis and Photoelectrocatalysis.

A highly efficient third generation catalyst, CaCu3Ti4O12 (CCTO) shows excellent photoelectrochemical (PEC) and photocatalytic ability. As only 4% part of the solar spectrum covers UV light, thus it is highly desirable to develop visible light active photocatalyst materials like CCTO for effective solar energy conversion. A direct band transition with a narrow band gap (1.5 eV) was observed. Under light irradiation, high photocurrent density was found to be 0.96 mA/cm(2), indicating the visible light induced photocatalytic ability of CCTO. Visible light mediated photocatalytic and photoelectrocatalytic degradation efficiency of CaCu3Ti4O12 pellets (CCTO) was investigated for three classes of pharmaceutical waste: erythrosin (dye), ciprofloxacin (antibiotic) and estriol (steroid). It is found that the degradation process follows first order kinetic reaction in electrocatalysis, photocatalysis and photoelectrocatalysis and high kinetic rate constant was observed in photoelectrocatalysis. This was quite high in comparison to previously reported methods.

Excitonic properties of wurtzite InP nanowires grown on silicon substrate.

In order to investigate the optical properties of wurtzite (Wz) InP nanowires grown on Si(001) by solid source molecular beam epitaxy with the vapour-liquid-solid method, the growth temperature and V/III pressure ratio have been optimized to remove any zinc-blende insertion. These pure Wz InP nanowires have been investigated by photoluminescence (PL), time-resolved PL and PL excitation. Direct observation of the second and third valence band in Wz InP nanowires using PL spectroscopy at high excitation power have been reported and, from these measurements, a crystal field splitting of 74 meV and a spin-orbit interaction energy of 145 meV were extracted. Based on the study of temperature-dependent optical properties, we have performed an investigation of the thermal escape processes of carriers and the electron-phonon coupling strength.

Wurtzite InP/InAs/InP core-shell nanowires emitting at telecommunication wavelengths on Si substrate.

Optical properties of wurtzite InP/InAs/InP core-shell nanowires grown on silicon substrates by solid source molecular beam epitaxy are studied by means of photoluminescence and microphotoluminescence. The growth conditions were optimized to obtain purely wurtzite radial quantum wells emitting in the telecom bands with a radiative lifetime in the 5-7 ns range at 14 K. Optical studies on single nanowires reveal that the polarization is mainly parallel to the growth direction. A 20-fold reduction of the photoluminescence intensity is observed between 14 and 300 K confirming the very good quality of the nanowires.

Temperature dependent photoluminescence properties of InAs/InP quantum dashes subjected to low energy phosphorous ion implantation and subsequent annealing.

We report on the impact of phosphorous ion-implantation-induced band gap tuning on the temperature dependent photoluminescence (PL) properties of InAs/InP quantum dashes (QDas). The high temperature range carriers' activation energy, extracted from Arrhenius plots, is found to decrease from 238 to 42 meV when the ion implantation dose increases from 10(11) cm(-2) to 5 x 10(14) cm(-2) which is consistent with the observed emission energy blueshift increase with increasing the ion implantation doses. This effect is attributed to the As/P exchange which reduces the carrier confining potential depth. For intermediate ion implantation doses the reduced carrier confining potential barrier combined with the non-uniform intermixing process, that causes an increased QDas size dispersion, result in anomalous temperature-dependent PL properties. Indeed, the temperature induced PL emission energy redshift measured between 10 K and 300 K is found to be strongly affected by the carrier redistribution within the broadened localized QDas states.

Inhomogeneous broadening and alloy intermixing in low proton dose implanted InAs/GaAs self-assembled quantum dots.

In this work, low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) experiments have been carried out to investigate the optical and electronic properties of InAs/GaAs quantum dots (QDs) subjected to room-temperature proton implantation at various doses (5 × 10(10)-10(14) ions cm(-2)) and subsequent thermal annealing. The energy shift of the main QD emission band is found to increase with increasing implantation dose. Our measurements show clear evidence of an inhomogeneous In/Ga intermixing at low proton implantation doses (≤5 × 10(11) ions cm(-2)), giving rise to the coexistence of intermixed and non-intermixed QDs. For higher implantation doses, a decrease of both the PL linewidth and the intersublevel spacing energy have been found to occur, suggesting that the dot-size, dot-composition and dot-strain distributions evolve towards more uniform ones.