Enhanced orbital magnetic moments in magnetic heterostructures with interface perpendicular magnetic anisotropy.

We have studied the magnetic layer thickness dependence of the orbital magnetic moment in magnetic heterostructures to identify contributions from interfaces. Three different heterostructures, Ta/CoFeB/MgO, Pt/Co/AlOx and Pt/Co/Pt, which possess significant interface contribution to the perpendicular magnetic anisotropy, are studied as model systems. X-ray magnetic circular dichroism spectroscopy is used to evaluate the relative orbital moment, i.e. the ratio of the orbital to spin moments, of the magnetic elements constituting the heterostructures. We find that the relative orbital moment of Co in Pt/Co/Pt remains constant against its thickness whereas the moment increases with decreasing Co layer thickness for Pt/Co/AlOx, suggesting that a non-zero interface orbital moment exists for the latter system. For Ta/CoFeB/MgO, a non-zero interface orbital moment is found only for Fe. X-ray absorption spectra shows that a particular oxidized Co state in Pt/Co/AlOx, absent in other heterosturctures, may give rise to the interface orbital moment in this system. These results show element specific contributions to the interface orbital magnetic moments in ultrathin magnetic heterostructures.

Electrical detection of millimeter-waves by magnetic tunnel junctions using perpendicular magnetized L10-FePd free layer.

Spin dynamics excited by spin-polarized current in magnetic tunnel junctions (MTJs) is potentially useful in nanoscale electrical oscillation sources and detection devices. A spin oscillator/detector should work at a high frequency, such as that of a millimeter-wave, where the quality of a semiconductor device is restricted by carrier mobility, the CR time constant, and so on. Developers of spin systems for practical use need to find out how to excite spin dynamics (i) in the millimeter-wave region, (ii) with low power consumption (ex: no external magnetic field, low damping material), and (iii) for broad frequency modulation. Here L10-ordered FePd alloy with perpendicular magnetocrystalline anisotropy (PMA) and a low damping constant, 0.007, was used for the free layer in the MTJs, and a homodyne-detected ferromagnetic resonance (FMR) signal was obtained at around 30 GHz together with the possibility of one-octave frequency modulation. The FMR signal in out-of-plane magnetized L10-ordered FePd free layer could be excited without an external magnetic field by injecting in-plane spin polarized alternating current. This study shows the potential utility of L10-ordered alloy materials such as FePt, CoPt, MnAl, and MnGa in a variety of millimeter-wave spin devices.

Fabrication of spintronics device by direct synthesis of single-walled carbon nanotubes from ferromagnetic electrodes.

We describe an alternative method for realizing a carbon nanotube spin field-effect transistor device by the direct synthesis of single-walled carbon nanotubes (SWNTs) on substrates by alcohol catalytic chemical vapor deposition. We observed hysteretic magnetoresistance (MR) at low temperatures due to spin-dependent transport. In these devices, the maximum ratio in resistance variation of MR was found to be 1.8%.