Anomalous enhancement of thermoelectric power factor in multiple two-dimensional electron gas system.

Toward drastic enhancement of thermoelectric power factor, quantum confinement effect proposed by Hicks and Dresselhaus has intrigued a lot of researchers. There has been much effort to increase power factor using step-like density-of-states in two-dimensional electron gas (2DEG) system. Here, we pay attention to another effect caused by confining electrons spatially along one-dimensional direction: multiplied 2DEG effect, where multiple discrete subbands contribute to electrical conduction, resulting in high Seebeck coefficient. The power factor of multiple 2DEG in GaAs reaches the ultrahigh value of ~100 µWcm-1 K-2 at 300 K. We evaluate the enhancement rate defined as power factor of 2DEG divided by that of three-dimensional bulk. The experimental enhancement rate relative to the theoretical one of conventional 2DEG reaches anomalously high (~4) in multiple 2DEG compared with those in various conventional 2DEG systems (~1). This proposed methodology for power factor enhancement opens the next era of thermoelectric research.

Boosting Thermoelectric Performance in Epitaxial GeTe Film/Si by Domain Engineering and Point Defect Control.

This study demonstrates a simultaneous realization of ultralow thermal conductivity and high thermoelectric power factor in epitaxial GeTe thin films/Si substrates by a combination of the interface introduction by domain engineering and the suppression of Ge vacancy generation by point defect control. We formed epitaxial Te-poor GeTe thin films having low-angle grain boundaries with a misorientation angle close to 0° or twin interfaces with a misorientation angle close to 180°. The control of interfaces and point defects gave rise to ultralow lattice thermal conductivity of ∼0.7 ± 0.2 W m-1 K-1. This value was the same in the order of magnitude as the theoretical minimum lattice thermal conductivity of ∼0.5 W m-1 K-1 calculated by the Cahill-Pohl model. At the same time, the GeTe thin films exhibited a high thermoelectric power factor because of the suppression of Ge vacancy generation and a small contribution of grain boundary carrier scattering. The outstanding combined technique of domain engineering and point defect control can be a great approach for developing high-performance thermoelectric films.

Curcumin tautomerization in the mechanism of pentameric amyloid- ß42 oligomers disassembly.

Alzheimer's disease is a neurologic disorder characterized by the accumulation of extracellular deposits of amyloid-ß (Aß) fibrils in the brain of patients. The key etiologic agent in Alzheimer's disease is not known; however oligomeric Aß appears detrimental to neuronal functions and increases Aß fibrils deposition. Previous research has shown that curcumin, a phenolic pigment of turmeric, has an effect on Aß assemblies, although the mechanism remains unclear. In this study, we demonstrate that curcumin disassembles pentameric oligomers made from synthetic Aß42 peptides (pentameric oAß42), using atomic force microscopy imaging followed by Gaussian analysis. Since curcumin shows keto-enol structural isomerism (tautomerism), the effect of keto-enol tautomerism on its disassembly was investigated. We have found that curcumin derivatives capable of keto-enol tautomerization also disassemble pentameric oAß42, while, a curcumin derivative incapable of tautomerization did not affect the integrity of pentameric oAß42. These experimental findings indicate that keto-enol tautomerism plays an essential role in the disassembly. We propose a mechanism for oAß42 disassembly by curcumin based on molecular dynamics calculations of the tautomerism. When curcumin and its derivatives bind to the hydrophobic regions of oAß42, the keto-form changes predominantly to the enol-form; this transition is associated with structural (twisting, planarization and rigidification) and potential energy changes that give curcumin enough force to act as a torsion molecular-spring that eventually disassembles pentameric oAß42. This proposed mechanism sheds new light on keto-enol tautomerism as a relevant chemical feature for designing such novel therapeutic drugs that target protein aggregation.

Quantitative spatial mapping of distorted state phases during the metal-insulator phase transition for nanoscale VO2 engineering.

Vanadium dioxide (VO2) material, known for changing physical properties due to metal-insulator transition (MIT) near room temperature, has been reported to undergo a phase change depending on the strain. This fact can be a significant problem for nanoscale devices in VO2, where the strain field covers a large area fraction, spatially non-uniform, and the amount of strain can vary during the MIT process. Direct measurement of the strain field distribution during MIT is expected to establish a methodology for material phase identification. We have demonstrated the effectiveness of geometric phase analysis (GPA), high-resolution transmission electron microscopy techniques, and transmission electron diffraction (TED). The GPA images show that the nanoregions of interest are under tensile strain conditions of less than 0.4% as well as a compressive strain of about 0.7% (Rutile phase VO2[100] direction), indicating that the origin of the newly emerged TED spots in MIT contains a triclinic phase. This study provides a substantial understanding of the strain-temperature phase diagram and strain engineering strategies for effective phase management of nanoscale VO2.

Thermoelectric Properties of PEDOT:PSS Containing Connected Copper Selenide Nanowires Synthesized by the Photoreduction Method.

Organic materials have attracted attention for thermoelectric materials reusing low-temperature waste heat. For the thermoelectric performance enhancement of organic materials, the introduction of inorganic nanowires is effective due to the percolation effect. In this study, we synthesized Cu2Se NWs by the photoreduction method and prepared poly(3,4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS) thin films containing Cu2Se NWs by spin-coating PEDOT:PSS and Cu2Se NWs alternatively. The composite films exhibited a drastic increase in electrical conductivity at more than 40 wt % Cu2Se, and the Cu2Se amount threshold was in good agreement with surface structures as observed by a scanning electron microscope. This indicates that the percolation effect of connected Cu2Se NWs brought high electrical conductivity. As a result, the composite thin films exhibited a higher power factor than the PEDOT:PSS film. This power factor enhancement by the percolation effect would be expected to contribute to the development of thermoelectric performance enhancement for organic materials.

Tunable Thermal Switch via Order-Order Transition in Liquid Crystalline Block Copolymer.

Organic material-based thermal switch is drawing much attention as one of the key thermal management devices in organic electronic devices. This study aims at tuning the switching temperature (TS) of thermal conductivity by using liquid crystalline block copolymers (BCs) with different order-order transition temperature (Ttr) related to the types of mesogens in the side chain. The BC films with low Ttr of 363 K and high Ttr of 395 K exhibit reversible thermal conductivity switching behaviors at TS of ∼360 K and ∼390 K, respectively. The BC films also exhibit thermal conductivity variation originating from the anisotropy of the internal structures: poly(ethylene oxide) domains and liquid crystals. These results demonstrate that the switching behavior is attributed to an order-order transition between BC films with vertically arranged cylinder domains and the ones with ordered sphere domains. This highlights that BCs become a promising thermal conductivity switching material with tailored TS.

The Effect of Ethanol on Disassembly of Amyloid-ß1-42 Pentamer Revealed by Atomic Force Microscopy and Gel Electrophoresis.

The most common type of dementia, Alzheimer's disease, is associated with senile plaques formed by the filamentous aggregation of hydrophobic amyloid-ß (Aß) in the brains of patients. Small oligomeric assemblies also occur and drugs and chemical compounds that can interact with such assemblies have attracted much attention. However, these compounds need to be solubilized in appropriate solvents, such as ethanol, which may also destabilize their protein structures. As the impact of ethanol on oligomeric Aß assembly is unknown, we investigated the effect of various concentrations of ethanol (0 to 7.2 M) on Aß pentameric assemblies (Aßp) by combining blue native-PAGE (BN-PAGE) and ambient air atomic force microscopy (AFM). This approach was proven to be very convenient and reliable for the quantitative analysis of Aß assembly. The Gaussian analysis of the height histogram obtained from the AFM images was correlated with band intensity on BN-PAGE for the quantitative estimation of Aßp. Our observations indicated up to 1.4 M (8.3%) of added ethanol can be used as a solvent/vehicle without quantitatively affecting Aß pentamer stability. Higher concentration induced significant destabilization of Aßp and eventually resulted in the complete disassembly of Aßp.

Phonon transport in the nano-system of Si and SiGe films with Ge nanodots and approach to ultralow thermal conductivity.

Phonon transport in the nano-system has been studied using well-designed nanostructured materials to observe and control the interesting phonon behaviors like ballistic phonon transport. Recently, we observed drastic thermal conductivity reduction in the films containing well-controlled nanodots. Here, we investigate whether this comes from the interference effect in ballistic phonon transport by comparing the thermal properties of the Si or Si0.75Ge0.25 films containing Ge nanodots. The experimentally-obtained thermal resistance of the nanodot layer shows peculiar nanodot size dependence in the Si films and a constant value in the SiGe films. From the phonon simulation results, interestingly, it is clearly found that in the nanostructured Si film, phonons travel in a non-diffusive way (ballistic phonon transport). On the other hand, in the nanostructured SiGe film, although simple diffusive phonon transport occurs, extremely-low thermal conductivity (∼0.81 W m-1 K-1) close to that of amorphous Si0.7Ge0.3 (∼0.7 W m-1 K-1) is achieved due to the combination of the alloy phonon scattering and Ge nanodot scattering.

High Thermoelectric Power Factor Realization in Si-Rich SiGe/Si Superlattices by Super-Controlled Interfaces.

A Si-based superlattice is one of the promising thermoelectric films for realizing a stand-alone single-chip power supply. Unlike a p-type superlattice (SL) achieving a higher power factor due to strain-induced high hole mobility, in the n-type SL, the strain can degrade the power factor due to lifting conduction band degeneracy. Here, we propose epitaxial Si-rich SiGe/Si SLs with ultrathin Ge segregation interface layers. The ultrathin interface layers are designed to be sufficiently strained, not to give strain to the above Si layers. Therein, a drastic thermal conductivity reduction occurs by larger phonon scattering at the interfaces with the large atomic size difference between Si layers and Ge segregation layers, while unstrained Si layers preserve a high conduction band degeneracy leading to a high Seebeck coefficient. As a result, the n-type Si0.7Ge0.3/Si SL with controlled interfaces achieves a higher power factor of ∼25 µW cm-1 K-2 in the in-plane direction at room temperature, which is superior to ever reported SiGe-based films: SiGe-based SLs and SiGe films. The Si0.7Ge0.3/Si SL with controlled interfaces also exhibits a low thermal conductivity of ∼2.5 W m-1 K-1 in the cross-plane direction, which is ∼5 times lower than the reported value in a conventional Si0.7Ge0.3/Si SL. These results demonstrate that strain and atomic differences controlled by ultrathin layers can bring a breakthrough for realizing high-performance light-element-based thermoelectric films.

Resistive switching memory performance in oxide hetero-nanocrystals with well-controlled interfaces.

For realization of new informative systems, the memristor working like synapse has drawn much attention. We developed isolated high-density Fe3O4 nanocrystals on Ge nuclei/Si with uniform and high resistive switching performance using low-temperature growth. The Fe3O4 nanocrystals on Ge nuclei had a well-controlled interface (Fe3O4/GeOx/Ge) composed of high-crystallinity Fe3O4 and high-quality GeOx layers. The nanocrystals showed uniform resistive switching characteristics (high switching probability of ~90%) and relatively high Off/On resistance ratio (~58). The high-quality interface enables electric field application to Fe3O4 and GeOx near the interface, which leads to effective positively charged oxygen vacancy movement, resulting in high-performance resistive switching. Furthermore, we successfully observed memory effect in nanocrystals with well-controlled interface. The experimental confirmation of the memory effect existence even in ultrasmall nanocrystals is significant for realizing non-volatile nanocrystal memory leading to neuromorphic devices.

Methodology of Thermoelectric Power Factor Enhancement by Controlling Nanowire Interface.

The simultaneous realization of low thermal conductivity and high thermoelectric power factor in materials has long been the goal for the social use of high-performance thermoelectric modules. Nanostructuring approaches have drawn considerable attention because of the success in reducing thermal conductivity. On the contrary, enhancement of the thermoelectric power factor, namely, the simultaneous increase of the Seebeck coefficient and electrical conductivity, has been difficult. We propose a method for the power factor enhancement by introducing coherent homoepitaxial interfaces with controlled dopant concentration, which enables the quasiballistic transmission of high-energy carriers. The wavenumber of the high-energy carriers is nearly conserved through the interfaces, resulting in simultaneous realization of a high Seebeck coefficient and relatively high electrical mobility. Here, we experimentally demonstrate the dopant-controlled epitaxial interface effect for the thermoelectric power factor enhancement using our "embedded-ZnO nanowire structure" having high-quality nanowire interfaces. This presents the methodology for substantial power factor enhancement by interface carrier scattering.