Your browser doesn't support javascript.
loading
Mostrar: 20 | 50 | 100
Resultados 1 - 3 de 3
Filtrar
Mais filtros










Base de dados
Intervalo de ano de publicação
1.
Opt Express ; 32(8): 13628-13639, 2024 Apr 08.
Artigo em Inglês | MEDLINE | ID: mdl-38859328

RESUMO

A mid-infrared (mid-IR) porous silicon (PSi) waveguide gas sensor was fabricated. PSi guiding and confinement layers were prepared by electrochemical anodization. Ridge waveguides were patterned using standard i-line photolithography and reactive ion etching. Due to the open pores, light and gas molecules interact in the inside volume, unlike bulk material in which the interaction takes place with the evanescent part of the light. Propagation losses are measured for a wavelength range spanning from λ = 3.9 to 4.55 µm with a value of 11.4 dB/cm at λ = 4.28 µm. The influence of native oxidation and ageing on the propagation losses was investigated. Limit of detection (LoD) of 1000 ppm is obtained with the waveguide sensor at the carbon dioxide (CO2) absorption peak at λ = 4.28 µm.

2.
Faraday Discuss ; 242(0): 129-143, 2023 Jan 31.
Artigo em Inglês | MEDLINE | ID: mdl-36331026

RESUMO

The development of synthesis methods with enhanced control over the composition, size and atomic structure of High Entropy Nano-Alloys (HENA) could give rise to a new repertoire of nanomaterials with unprecedented functionalities, notably for mechanical, catalytic or hydrogen storage applications. Here, we have developed two original synthesis methods, one by a chemical route and the other by a physical one, to fabricate HENA with a size between 3 and 10 nm and a face centered cubic structure containing three (CoNiPt), four (CoNiPtCu and CoNiPtAu) or five (CoNiPtAuCu) metals close to the equiatomic composition. The key point in the proposed chemical synthesis method is to compensate the difference in reactivity of the different metal precursors by increasing the synthesis temperature using high boiling solvents. Physical syntheses were performed by pulsed laser ablation using a precise alternating deposition of the individual metals on a heated amorphous carbon substrate. Finally, we have exploited aberration-corrected transmission electron microscopy to explore the nanophase diagram of these nanostructures and reveal intrinsic thermodynamic properties of those complex nanosystems. In particular, we have shown (i) that the complete mixing of all elements can only occur close to the equiatomic composition and (ii) how the Ostwald ripening during HENA synthesis can induce size-dependent deviations from the equiatomic composition leading to the formation of large core-shell nanoparticles.

3.
ACS Appl Mater Interfaces ; 13(27): 32579-32589, 2021 Jul 14.
Artigo em Inglês | MEDLINE | ID: mdl-34196522

RESUMO

A perpendicularly magnetized spin injector with a high Curie temperature is a prerequisite for developing spin optoelectronic devices on two-dimensional (2D) materials working at room temperature (RT) with zero applied magnetic field. Here, we report the growth of Ta/CoFeB/MgO structures with large perpendicular magnetic anisotropy (PMA) on full-coverage monolayer (ML) molybdenum disulfide (MoS2). A large perpendicular interface anisotropy energy of 0.975 mJ/m2 has been obtained at the CoFeB/MgO interface, comparable to that observed in magnetic tunnel junction systems. It is found that the insertion of MgO between the ferromagnetic (FM) metal and the 2D material can effectively prevent the diffusion of the FM atoms into the 2D material. Moreover, the MoS2 ML favors a MgO(001) texture and plays a critical role in establishing the large PMA. First-principles calculations on a similar Fe/MgO/MoS2 structure reveal that the MgO thickness can modify the MoS2 band structure, from a direct band gap with 3ML-MgO to an indirect band gap with 7 ML-MgO. The proximity effect induced by Fe results in splitting of 10 meV in the valence band at the Γ point for the 3ML-MgO structure, while it is negligible for the 7 ML-MgO structure. These results pave the way to develop RT spin optoelectronic devices based on 2D transition-metal dichalcogenide materials.

SELEÇÃO DE REFERÊNCIAS
DETALHE DA PESQUISA
...