The Eurasian Elk's (Alces alces) Brain Base Arteries in View of Vascular Variation.

This article presents the results of analysis of the arterial vascular region of the Eurasian elk, which is a representative of the Cervidae family. The study was conducted on 39 Eurasian elks. The head arteries of 25 animals were filled with LBS 3040 synthetic latex. The head arteries of the other 14 Eurasian elks were filled with an acetone solution of stained chlorinated polyvinyl chloride and macerated. The arterial circle of the Eurasian elk's brain is composed of bilateral rostral cerebral arteries and caudal communicating arteries. The basilar artery closes the arterial circle caudally. The rostral cerebral artery first ramifies into the rostral choroidal artery, then, the middle cerebral artery and the rostral communicating artery. The caudal cerebral artery and the rostral cerebellar artery branch off the caudal communicating artery. The arterial pattern of the Eurasian elk's brain base is similar to the arteries found in other deer. Like in other Ruminantia, the rostral epidural rete mirabile is a unique structure in the Eurasian elk's arterial system. Anat Rec, 302:339-345, 2019. © 2018 Wiley Periodicals, Inc.

Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices.

Following the rapid development of the electronics industry and technology, it is expected that future electronic devices will operate based on functional units at the level of electrically active molecules or even atoms. One pathway to observe and characterize such fundamental operation is to focus on identifying isolated or coupled dopants in nanoscale silicon transistors, the building blocks of present electronics. Here, we review some of the recent progress in the research along this direction, with a focus on devices fabricated with simple and CMOS-compatible-processing technology. We present results from a scanning probe method (Kelvin probe force microscopy) which show direct observation of dopant-induced potential modulations. We also discuss tunneling transport behavior based on the analysis of low-temperature I-V characteristics for devices representative for different regimes of doping concentration, i.e., different inter-dopant coupling strengths. This overview outlines the present status of the field, opening also directions toward practical implementation of dopant-atom devices.

The Arteries of the Brain in Hare (Lepus europaeus Pallas, 1778).

Research into course and variability of brain arteries in hare were performed on 38 adult hares of both sexes (males 23 and females 15). The arteries were filled with a synthetic latex at a constant pressure introduced with a medical syringe to the left ventricle. The source of blood supply to the brain was internal carotid arteries, whose branches formed an arterial circle of the brain, vertebral arteries, and basilar artery as the result of its anastomosis. Variability focused on a method of departure of middle cerebral arteries, which were multiple vessels in 39.5% of cases and rostral cerebellar arteries. Caudal communicating arteries in hare comprised bilateral anastomosis of internal carotid arteries and final branches of the basilar artery. It stabilized the steady flow of blood to all parts of the brain. Caudal cerebral arteries comprised final branches of the basilar artery. The largest capacity of all the arteries of the brain was observed in the main trunk of the basilar artery. The capacity of these vessels was 4.53 mm(3) on average. The factor of capacity of cerebral arteries in relation to weight of the brain reaches a high value in hare.

Atom devices based on single dopants in silicon nanostructures.

Silicon field-effect transistors have now reached gate lengths of only a few tens of nanometers, containing a countable number of dopants in the channel. Such technological trend brought us to a research stage on devices working with one or a few dopant atoms. In this work, we review our most recent studies on key atom devices with fundamental structures of silicon-on-insulator MOSFETs, such as single-dopant transistors, preliminary memory devices, single-electron turnstile devices and photonic devices, in which electron tunneling mediated by single dopant atoms is the essential transport mechanism. Furthermore, observation of individual dopant potential in the channel by Kelvin probe force microscopy is also presented. These results may pave the way for the development of a new device technology, i.e., single-dopant atom electronics.

Single-electron transport through single dopants in a dopant-rich environment.

We show that single-electron transport through a single dopant can be achieved even in a random background of many dopants without any precise placement of individual dopants. First, we observe potential maps of a phosphorus-doped channel by low-temperature Kelvin probe force microscopy, and demonstrate potential changes due to single-electron trapping in single dopants. We then show that only one or a small number of dopants dominate the initial stage of source-drain current vs gate voltage characteristics in scaled-down, doped-channel, field-effect transistors.