1.
Opt Express
; 21(25): 31098-104, 2013 Dec 16.
Artigo
em Inglês
| MEDLINE
| ID: mdl-24514684
RESUMO
We present a diode incorporating a large number (12) of GaAs quantum wells that emits light from exciton-polariton states at room temperature. A reversely biased tunnel junction is placed in the cavity region to improve current injection into the device. Electroluminescence studies reveal two polariton branches which are spectrally separated by a Rabi splitting of 6.5 meV. We observe an anticrossing of the two branches when the temperature is lowered below room temperature as well as a Stark shift of both branches in a bias dependent photoluminescence measurement.