Nanometer-scale photon confinement in topology-optimized dielectric cavities.

Nanotechnology enables in principle a precise mapping from design to device but relied so far on human intuition and simple optimizations. In nanophotonics, a central question is how to make devices in which the light-matter interaction strength is limited only by materials and nanofabrication. Here, we integrate measured fabrication constraints into topology optimization, aiming for the strongest possible light-matter interaction in a compact silicon membrane, demonstrating an unprecedented photonic nanocavity with a mode volume of V ~ 3 × 10-4 λ3, quality factor Q ~ 1100, and footprint 4 λ2 for telecom photons with a λ ~ 1550 nm wavelength. We fabricate the cavity, which confines photons inside 8 nm silicon bridges with ultra-high aspect ratios of 30 and use near-field optical measurements to perform the first experimental demonstration of photon confinement to a single hotspot well below the diffraction limit in dielectrics. Our framework intertwines topology optimization with fabrication and thereby initiates a new paradigm of high-performance additive and subtractive manufacturing.

Wafer-scale fabrication of nanoapertures using corner lithography.

Several submicron probe technologies require the use of apertures to serve as electrical, optical or fluidic probes; for example, writing precisely using an atomic force microscope or near-field sensing of light reflecting from a biological surface. Controlling the size of such apertures below 100 nm is a challenge in fabrication. One way to accomplish this scale is to use high resolution tools such as deep UV or e-beam. However, these tools are wafer-scale and expensive, or only provide series fabrication. For this reason, in this study a versatile method adapted from conventional micromachining is investigated to fabricate protruding apertures on wafer-scale. This approach is called corner lithography and offers control of the size of the aperture with diameter less than 50 nm using a low-budget lithography tool. For example, by tuning the process parameters, an estimated mean size of 44.5 nm and an estimated standard deviation of 2.3 nm are found. The technique is demonstrated--based on a theoretical foundation including a statistical analysis--with the nanofabrication of apertures at the apexes of micromachined pyramids. Besides apertures, the technique enables the construction of wires, slits and dots into versatile three-dimensional structures.

3D nanofabrication of fluidic components by corner lithography.

A reproducible wafer-scale method to obtain 3D nanostructures is investigated. This method, called corner lithography, explores the conformal deposition and the subsequent timed isotropic etching of a thin film in a 3D shaped silicon template. The technique leaves a residue of the thin film in sharp concave corners which can be used as structural material or as an inversion mask in subsequent steps. The potential of corner lithography is studied by fabrication of functional 3D microfluidic components, in particular i) novel tips containing nano-apertures at or near the apex for AFM-based liquid deposition devices, and ii) a novel particle or cell trapping device using an array of nanowire frames. The use of these arrays of nanowire cages for capturing single primary bovine chondrocytes by a droplet seeding method is successfully demonstrated, and changes in phenotype are observed over time, while retaining them in a well-defined pattern and 3D microenvironment in a flat array.

Capillary negative pressure measured by nanochannel collapse.

A new method is presented to measure capillarity-induced negative pressure. Negative pressures of several bars have been measured for five different liquids (ethanol, acetone, cyclohexane, aniline, and water) over a range of surface tension. Capillary negative pressure was measured in 79 +/- 3 nm silica nanochannels on the basis of the determination of the critical channel width for elastocapillary collapse of the flexible plate covering the channels. The results are consistent with the Young-Laplace equation.

Multi-silicon ridge nanofabrication by repeated edge lithography.

We present a multi-Si nanoridge fabrication scheme and its application in nanoimprint lithography (NIL). Triple Si nanoridges approximately 120 nm high and 40 nm wide separated by 40 nm spacing are fabricated and successfully applied as a stamp in nanoimprint lithography. The fabrication scheme, using a full-wet etching procedure in combination with repeated edge lithography, consists of hot H(3)PO(4) acid SiN(x) retraction etching, 20% KOH Si etching, 50% HF SiN(x) retraction etching and LOCal Oxidation of Silicon (LOCOS). Si nanoridges with smooth vertical sidewalls are fabricated by using Si 110 substrates and KOH etching. The presented technology utilizes a conventional photolithography technique, and the fabrication of multi-Si nanoridges on a full wafer scale has been demonstrated.

MEMS within a Swagelok: a new platform for microfluidic devices.

A novel packaging cum interfacing technique for microfluidic devices is reported. Unlike the conventional approach towards packaging in which the microsystem is first developed and finally packaged, a reverse approach is shown here that integrates the package with the microsystem either at the beginning or within the fabrication process. This new method employs standard glass tubes as substrates on which microfluidic components are fabricated. The tubular-substrate directly translates into a package and an interface, leading to 'plug-n-play' devices. Due to this approach, external handling forces on the microfluidic system are redirected towards the strong glass tube, and thus, improves device robustness. Maintaining the total size of the microsystem within the circumference of the glass tube enables this MEMS-on-tube assembly to be encapsulated within standard Swagelok connectors.

Nanoimprint lithography for nanophotonics in silicon.

A novel inverse imprinting procedure for nanolithography is presented which offers a transfer accuracy and feature definition that is comparable to state-of-the-art nanofabrication techniques. We illustrate the fabrication quality of a demanding nanophotonic structure: a photonic crystal waveguide. Local examination using photon scanning tunneling microscopy (PSTM) shows that the resulting nanophotonic structures have excellent guiding properties at wavelengths in the telecommunications range, which indicates a high quality of the local structure and the overall periodicity.

Periodic arrays of deep nanopores made in silicon with reactive ion etching and deep UV lithography.

We report on the fabrication of periodic arrays of deep nanopores with high aspect ratios in crystalline silicon. The radii and pitches of the pores were defined in a chromium mask by means of deep UV scan and step technology. The pores were etched with a reactive ion etching process with SF(6), optimized for the formation of deep nanopores. We have realized structures with pitches between 440 and 750 nm, pore diameters between 310 and 515 nm, and depth to diameter aspect ratios up to 16. To the best of our knowledge, this is the highest aspect ratio ever reported for arrays of nanopores in silicon made with a reactive ion etching process. Our experimental results show that the etching rate of the nanopores is aspect-ratio-dependent, and is mostly influenced by the angular distribution of the etching ions. Furthermore we show both experimentally and theoretically that, for sub-micrometer structures, reducing the sidewall erosion is the best way to maximize the aspect ratio of the pores. Our structures have potential applications in chemical sensors, in the control of liquid wetting of surfaces, and as capacitors in high-frequency electronics. We demonstrate by means of optical reflectivity that our high-quality structures are very well suited as photonic crystals. Since the process studied is compatible with existing CMOS semiconductor fabrication, it allows for the incorporation of the etched arrays in silicon chips.