Effect of Nanocarbon on the Structural and Mechanical Properties of 6061 Aluminum Composites by Powder Metallurgy.

6061 aluminum composites with 0.5 and 1 vol. % graphene nanoplatelets as well as 1 and 2 vol. % activated nanocarbon were manufactured by a powder metallurgy method. Scanning electron microscopy and Raman spectroscopy were used to study the morphology, structure, and distribution of nanocarbon reinforcements in the composite samples. Density Functional Theory (DFT) calculations were performed to understand the aluminum-carbon bonding and the effects of hybridized networks of carbon atoms on nanocarbon aluminum matrix composites. Scanning electron microscopy showed the good distribution and low agglomeration tendencies of nanoparticles in the composites. The formation of secondary phases at the materials interface was not detected in the hot-pressed composites. Raman spectroscopy showed structural changes in the reinforced composites after the manufacturing process. The results from Density Functional Theory calculations suggest that it is thermodynamically possible to form carbon rings in the aluminum matrix, which may be responsible for the improved mechanical strength. Our results also suggest that these carbon networks are graphene-like, which also agrees with the Raman spectroscopy data. Micro-Vickers hardness and compressive tests were used to determine the mechanical properties of the samples. Composites presented enhanced hardness, yield and ultimate strength compared to the 6061 aluminum alloy with no nanocarbon reinforcement. Ductility was also affected, as shown by the reduction in elongation and by the number of dimples in the fractured surfaces of the materials.

Tunable indirect-direct transition of few-layer SnSe via interface engineering.

Tin selenide (SnSe) is one of the best thermoelectric materials reported to date. The possibility of growing few-layer SnSe helped boost the interest in this long-known, earth abundant material. Pristine SnSe in bulk, mono- and few-layer forms are reported to have indirect electronic bandgaps. Possible indirect-direct transition in SnSe is attractive for its optoelectronic-related applications. Based on the results from first principles density functional theory calculations, we carefully analyzed electronic band structures of bulk, and bilayer SnSe with various interlayer stackings. We report the possible stacking-dependent indirect-direct transition of bilayer SnSe. By further analysis, our results reveal that it is the directionality of interlayer interactions that determine the critical features of their electronic band structures. In fact, by engineering the interface stacking between layers, it is possible to achieve few-layer SnSe with direct electronic band gap. This study provides fundamental insights to design few-layer SnSe and SnSe heterostructures for electronic/optoelectronic applications, where the interface geometry plays a fundamental role in device performance.

Symmetry induced semimetal-semiconductor transition in doped graphene.

Substitutional chemical doping is one way of introducing an electronic bandgap in otherwise semimetallic graphene. A small change in dopant arrangement can convert graphene from a semiconducting to a semimetallic state. Based on ab initio Density Functional Theory calculations, we discuss the electron structure of BN-doped graphene with Bravais and non-Bravais lattice-type defect patterns, identifying semiconducting/semimetallic configurations. Semimetallic behavior of graphene with non-Bravais lattice-type defect patterns can be explained by a phase cancellation in the scattering amplitude. Our investigation reveals for the first time that the symmetry of defect islands and the periodicity of defect modulation limit the phase cancellation which controls the semimetal-semiconductor transition in doped graphene.

Tunable electronics in large-area atomic layers of boron-nitrogen-carbon.

We report on the low-temperature electrical transport properties of large area boron and nitrogen codoped graphene layers (BNC). The temperature dependence of resistivity (5 K < T < 400 K) of BNC layers show semiconducting nature and display a band gap which increases with B and N content, in sharp contrast to large area graphene layers, which shows metallic behavior. Our investigations show that the amount of B dominates the semiconducting nature of the BNC layers. This experimental observations agree with the density functional theory (DFT) calculations performed on BNC structures similar in composition to the experimentally measured samples. In addition, the temperature dependence of the electrical conductivity of these samples displays two regimes: at higher temperatures, the doped samples display an Arrhenius-like temperature dependence thus indicating a well-defined band gap. At the lowest temperatures, the temperature dependence of the conductivity deviates from activated behavior and displays a conduction mechanism consistent with Mott's two-dimensional (2D) variable range hopping (2D-VRH). The ability to tune the electronic properties of thin layers of BNC by simply varying the concentration of B and N will provide a tremendous boost for obtaining materials with tunable electronic properties relevant to applications in solid state electronics.

Ab initio thermal transport properties of nanostructures from density functional perturbation theory.

We present a comprehensive first-principles study of the thermal transport properties of low-dimensional nanostructures such as polymers and nanowires. An approach is introduced where the phonon quantum conductance is computed from the combination of accurate plane-wave density functional theory electronic structure calculations, the evaluation of the interatomic force constants through density functional perturbation theory for lattice dynamics, and the calculation of transport properties by a real-space Green's function method based on the Landauer formalism. This approach is computationally very efficient, can be straightforwardly implemented as a post-processing step in a standard electronic structure calculation (Quantum ESPRESSO and WanT in the present implementation), and allows us to directly link the thermal transport properties of a device to the coupling, dimensionality, and atomistic structure of the system. It provides invaluable insight into the mechanisms that govern heat flow at the nanoscale and paves the way to the fundamental understanding of phonon engineering in nanostructures.

Band engineering and magnetic doping of epitaxial graphene on SiC (0001).

Using calculations from first principles we show how specific interface modifications can lead to a fine-tuning of the doping and band alignment in epitaxial graphene on SiC. Upon different choices of dopants, we demonstrate that one can achieve a variation of the valence band offset between the graphene Dirac point and the valence band edge of SiC up to 1.5 eV. Finally, via appropriate magnetic doping one can induce a half-metallic behavior in the first graphene monolayer. These results clearly establish the potential for graphene utilization in innovative electronic and spintronic devices.

Transport in multiterminal graphene nanodevices.

We study the transport properties of multiterminal graphene nanodevices using the Landauer-Buttiker approach and the tight binding model. We consider a four-terminal device made at the crossing of a zigzag and armchair nanoribbons and two types of T-junction devices. The transport properties of graphene multiterminal devices are highly sensitive to the details of the junction region. Thus the properties are drastically different from those on the armchair and zigzag counterparts. In the cross-junction device, we see a conductance dip in the armchair lead associated with a conductance peak in the zigzag lead. We find that this effect is enhanced in a T-junction device with one armchair sidearm.