Assuntos
Infecções por Escherichia coli/transmissão , Hospitais/estatística & dados numéricos , Plasmídeos/genética , beta-Lactamases/genética , Idoso , Antibacterianos/farmacologia , Surtos de Doenças , Escherichia coli/efeitos dos fármacos , Escherichia coli/enzimologia , Infecções por Escherichia coli/diagnóstico , Infecções por Escherichia coli/urina , Feminino , Humanos , Masculino , Testes de Sensibilidade Microbiana , Pessoa de Meia-Idade , República da Coreia , Análise de Sequência de DNARESUMO
Zinc tin oxide (ZTO) films were fabricated on SiO2/Si substrate as a function of Mg concentration (the ratio of 3 to 10 atomic%) using a spin-coating process. For the characterization of thin film transistors (TFTs), Zn0.3Sn0.70 channel TFT exhibited a higher on/off ratio compared to Zn0.5 Sn.0.5O channel TFT because the higher Sn concentration can induce more charge carriers. 3 atomic% Mg incorporated Zn0.3Sn0.7O channel TFTs showed stable electrical performances such as I(on/off) - 1 x 10(7), micro(sat) = 1.40 cm2 V(-1) s(-1), and S = 0.39 V/decade. However, 10 atomic% Mg incorporated Zn0.3Sn0.7O channel TFTs deteriorated their electrical performances due to Mg segregation. The Mg incorporated Zn0.3Sn0.7O channel TFTs effectively suppress off-current and threshold voltage change during positive gate bias stress due to their strong bonding with oxygen.
