Spike-Based Neuromorphic Hardware for Dynamic Tactile Perception with a Self-Powered Mechanoreceptor Array.

A self-powered mechanoreceptor array is demonstrated using four mechanoreceptor cells for recognition of dynamic touch gestures. Each cell consists of a triboelectric nanogenerator (TENG) for touch sensing and a bi-stable resistor (biristor) for spike encoding. It produces informative spike signals by sensing a force of an external touch and encoding the force into the number of spikes. An array of the mechanoreceptor cells is utilized to monitor various touch gestures and it successfully generated spike signals corresponding to all the gestures. To validate the practicality of the mechanoreceptor array, a spiking neural network (SNN), highly attractive for power consumption compared to the conventional von Neumann architecture, is used for the identification of touch gestures. The measured spiking signals are reflected as inputs for the SNN simulations. Consequently, touch gestures are classified with a high accuracy rate of 92.5%. The proposed mechanoreceptor array emerges as a promising candidate for a building block of tactile in-sensor computing in the era of the Internet of Things (IoT), due to the low cost and high manufacturability of the TENG. This eliminates the need for a power supply, coupled with the intrinsic high throughput of the Si-based biristor employing complementary metal-oxide-semiconductor (CMOS) technology.

Rewritable Photoluminescence and Structural Color Display for Dual-Responsive Optical Encryption.

Optical encryption using coloration and photoluminescent (PL) materials can provide highly secure data protection with direct and intuitive identification of encrypted information. Encryption capable of independently controlling wavelength-tunable coloration as well as variable light intensity PL is not adequately demonstrated yet. Herein, a rewritable PL and structural color (SC) display suitable for dual-responsive optical encryption developed with a stimuli-responsive SC of a block copolymer (BCP) photonic crystal (PC) with alternating in-plane lamellae, of which a variety of 3D and 2D perovskite nanocrystals is preferentially self-assembled with characteristic PL, is presented. The SC of a BCP PC is controlled in the visible range with different perovskite precursor doping times. The perovskite nanocrystals developed in the BCP PC are highly luminescent, with a PL quantum yield of ≈33.7%, yielding environmentally stable SC and PL dual-mode displays. The independently programmed SC and PL information is erasable and rewritable. Dual-responsive optical encryption is demonstrated, in which true Morse code information is deciphered only when the information encoded by SCs is properly combined with PL information. Numerous combinations of SC and PL realize high security level of data anticounterfeiting. This dual-mode encryption display offers novel optical encryption with high information security and anti-counterfeiting.

Repairable Macroscopic Monodomain Arrays from Block Copolymers Enabled by Photoplastic and Photodielectric Effects.

Upon exposure to UV light (120 mW/cm2, λ = 365 nm), a trans-cis isomerization occurs in a cylinder-forming, azobenzene-containing block copolymer of polydimethylsiloxane-b-poly((4(phenyldiazenyl)phenoxy)hexyl acrylate) (PDMS-b-PPHA) that enables the generation of monodomains of healable, long-range ordered arrays of nanoscopic domains over macroscopic distances. The trans-cis isomerization gives rise to a significant increase in the dielectric constant (from 6.52 to 19.8 at 100 Hz, photodielectric behavior) and a dramatic decrease in the Tg (from 54 to 1 °C, photoplastic behavior) of the PPHA block. By combining these characteristics with an in-plane electric field, macroscopic monodomains of near-perfectly aligned cylindrical microdomains are achieved at low temperatures, and a damage repair is clearly uncovered, where the 300 nm wide scratches can be completely healed at 40 °C, leaving a smooth, uniformly thick film where the continuity and orientation of the aligned microdomains are restored. Subsequent exposure to visible light causes a cis-trans isomerization, increasing the matrix Tg to 54 °C, producing highly oriented and aligned PDMS cylindrical microdomains in a PPHA matrix.

5 nm Ultrathin Crystalline Ferroelectric P(VDF-TrFE)-Brush Tuned for Hysteresis-Free Sub 60 mV dec-1 Negative-Capacitance Transistors.

Negative-capacitance field-effect transistors (NC-FETs) have gathered enormous interest as a way to reduce subthreshold swing (SS) and overcome the issue of power dissipation in modern integrated circuits. For stable NC behavior at low operating voltages, the development of ultrathin ferroelectrics (FE), which are compatible with the industrial process, is of great interest. Here, a new scalable ultrathin ferroelectric polymer layer is developed based on trichloromethyl (CCl3 )-terminated poly(vinylidene difluoride-co-trifloroethylene) (P(VDF-TrFE)) to achieve the state-of-the-art performance of NC-FETs. The crystalline phase of 5-10 nm ultrathin P(VDF-TrFE) is prepared on AlOX by a newly developed brush method, which enables an FE/dielectric (DE) bilayer. FE/DE thickness ratios are then systematically tuned at ease to achieve ideal capacitance matching. NC-FETs with optimized FE/DE thickness at a thickness limit demonstrate hysteresis-free operation with an SS of 28 mV dec-1 at ≈1.5 V, which competes with the best reports. This P(VDF-TrFE)-brush layer can be broadly adapted to NC-FETs, opening an exciting avenue for low-power devices.

Hardware-Intrinsic Physical Unclonable Functions by Harnessing Nonlinear Conductance Variation in Oxide Semiconductor-Based Diode.

With the advancement of the Internet of Things (IoT), numerous electronic devices are connected to each other and exchange a vast amount of data via the Internet. As the number of connected devices increases, security concerns have become more significant. As one of the potential solutions for security issues, hardware intrinsic physical unclonable functions (PUFs) are emerging semiconductor devices that exploit inherent randomness generated during the manufacturing process. The unclonable security key generated from PUF can address the inherent limitations of conventional electronic systems which depend solely on software. Although numerous PUFs based on the emerging memory devices requiring switching operations have been proposed, achieving hardware intrinsic PUF with low power consumption remains a key challenge. Here, we demonstrate that the process-induced nonlinear conductance variations of oxide semiconductor-based Schottky diodes provide a suitable source of entropy for the implementation of PUF without switching operation. Using a mild oxygen plasma treatment, the surface electron accumulation layer that forms naturally in oxide semiconductor film can be partially eliminated, resulting in a large variation of nonlinearity as an exotic entropy source. The mild plasma-treated Schottky diodes showed near ideal 50% average uniformity and uniqueness, as well as an ideal entropy value without the need for additional hardware area and power costs. These findings will pave the way for the development of hardware intrinsic PUFs to realize energy-efficient cryptographic hardware.

Graphene Oxide-Based Memristive Logic-in-Memory Circuit Enabling Normally-Off Computing.

Memristive logic-in-memory circuits can provide energy- and cost-efficient computing, which is essential for artificial intelligence-based applications in the coming Internet-of-things era. Although memristive logic-in-memory circuits have been previously reported, the logic architecture requiring additional components and the non-uniform switching of memristor have restricted demonstrations to simple gates. Using a nanoscale graphene oxide (GO) nanosheets-based memristor, we demonstrate the feasibility of a non-volatile logic-in-memory circuit that enables normally-off in-memory computing. The memristor based on GO film with an abundance of unusual functional groups exhibited unipolar resistive switching behavior with reliable endurance and retention characteristics, making it suitable for logic-in-memory circuit application. In a state of low resistance, temperature-dependent resistance and I-V characteristics indicated the presence of a metallic Ni filament. Using memristor-aided logic (MAGIC) architecture, we performed NOT and NOR gates experimentally. Additionally, other logic gates such as AND, NAND, and OR were successfully implemented by combining NOT and NOR universal logic gates in a crossbar array. These findings will pave the way for the development of next-generation computer systems beyond the von Neumann architecture, as well as carbon-based nanoelectronics in the future.

Artificial Multisensory Neuron with a Single Transistor for Multimodal Perception through Hybrid Visual and Thermal Sensing.

An artificial multisensory device applicable to in-sensor computing is demonstrated with a single-transistor neuron (1T-neuron) for multimodal perception. It simultaneously receives two sensing signals from visual and thermal stimuli. The 1T-neuron transforms these signals into electrical signals in the form of spiking and then fires them for a spiking neural network at the same time. This feature makes it feasible to realize input neurons for multimodal sensing. Visual and thermal sensing is achieved due to the inherent optical and thermal behaviors of the 1T-neuron. To demonstrate a neuromorphic multimodal sensing system with the artificial multisensory 1T-neuron, fingerprint recognition, widely used for biometric security, is implemented. Owing to the simultaneous sensing of heat as well as light, the proposed fingerprint recognition system composed of multisensory 1T-neurons not only identifies a genuine pattern but also judges whether or not it is forged.

Apex hydrogen bonds in dendron assemblies modulate close-packed mesocrystal structures.

The close-packed mesocrystal structures from soft-matter assemblies have recently received attention due to their structural similarity to atomic crystals, displaying various sphere-packing Frank-Kasper (FK) and quasicrystal structures. Herein, diverse mesocrystal structures are explored in second-generation dendrons (G2-X) designed with identical wedges, in which the terminal functionalities X = CONH2 and CH2NH2 represent two levels of the strong and weak hydrogen-bonding apexes, respectively. The cohesive interactions at the core apex, referred to as the core interactions, are effectively modulated by forming heterogeneous hydrogen bonds between these two functional units. For the dendron assemblies compositionally close to each pure component of G2-CONH2 and G2-CH2NH2, their own FK A15 and C14 phases dominate other phases, respectively. We show the existence of the wide-range FK σ including the dodecagonal quasicrystal (DDQC) phases from the dendron mixtures between G2-CONH2 and G2-CH2NH2, providing an experimental phase sequence of A15-σ-DDQC-C14 as the core interactions are alleviated. Intriguingly, the temperature dependence of particle sizes shows that the high plateau values of particle sizes are maintained equivalently until each threshold temperature (Tth), followed by a prompt decrease above the Tth. A decrease in Tth by alleviating the core interactions and its composition dependence suggest that the more size-dispersed particles, the more susceptibility to chain exchange with increasing temperature. Our results on the formation of supramolecular dendron assemblies provide a guide to understand the core-interaction-dependent mesocrystal structures toward the fundamental principle underlying the temperature dependence of their particle sizes.

A Vertical Single Transistor Neuron with Core-Shell Dual-Gate for Excitatory-Inhibitory Function and Tunable Firing Threshold Voltage.

A novel inhibitable and firing threshold voltage tunable vertical nanowire (NW) single transistor neuron device with core-shell dual-gate (CSDG) was realized and verified by TCAD simulation. The CSDG NW neuron is enclosed by an independently accessed shell gate and core gate to serve an excitatory-inhibitory transition and a firing threshold voltage adjustment, respectively. By utilizing the shell gate, the firing of specific neuron can be inhibited for winner-takes-all learning. It was confirmed that the independently accessed core gate can be used for adjustment of the firing threshold voltage to compensate random conductance variation before the learning and to fix inference error caused by unwanted synapse conductance change after the learning. This threshold voltage tuning can also be utilized for homeostatic function during the learning process. Furthermore, a myelination function which controls the transmission rate was obtained based on the inherent asymmetry between the source and drain in vertical NW structure. Finally, using the CSDG NW neuron device, a letter recognition test was conducted by SPICE simulation for a system-level validation. This multi-functional neuron device can contribute to construct a high-density monolithic SNN hardware combining with the previously developed vertical synapse MOSFET devices.

Comb-type polymer-hybridized MXene nanosheets dispersible in arbitrary polar, nonpolar, and ionic solvents.

Solution-based processing of two-dimensional (2D) nanomaterials is highly desirable, especially for the low-temperature large-area fabrication of flexible multifunctional devices. MXenes, an emerging family of 2D materials composed of transition metal carbides, carbonitrides, or nitrides, provide excellent electrical and electrochemical properties through aqueous processing. Here, we further expand the horizon of MXene processing by introducing a polymeric superdispersant for MXene nanosheets. Segmented anchor-spacer structures of a comb-type polymer, polycarboxylate ether (PCE), provide polymer grafting-like steric spacings over the van der Waals range of MXene surfaces, thereby reducing the colloidal interactions by the order of 103, regardless of solvent. An unprecedented broad dispersibility window for Ti3C2Tx MXene, covering polar, nonpolar, and even ionic solvents, was achieved. Furthermore, close PCE entanglements in MXene@PCE composite films resulted in highly robust properties upon prolonged mechanical and humidity stresses.

Self-Powered Artificial Mechanoreceptor Based on Triboelectrification for a Neuromorphic Tactile System.

A self-powered artificial mechanoreceptor module is demonstrated with a triboelectric nanogenerator (TENG) as a pressure sensor with sustainable energy harvesting and a biristor as a neuron. By mimicking a biological mechanoreceptor, it simultaneously detects the pressure and encodes spike signals to act as an input neuron of a spiking neural network (SNN). A self-powered neuromorphic tactile system composed of artificial mechanoreceptor modules with an energy harvester can greatly reduce the power consumption compared to the conventional tactile system based on von Neumann computing, as the artificial mechanoreceptor module itself does not demand an external energy source and information is transmitted with spikes in a SNN. In addition, the system can detect low pressures near 3 kPa due to the high output range of the TENG. It therefore can be advantageously applied to robotics, prosthetics, and medical and healthcare devices, which demand low energy consumption and low-pressure detection levels. For practical applications of the neuromorphic tactile system, classification of handwritten digits is demonstrated with a software-based simulation. Furthermore, a fully hardware-based breath-monitoring system is implemented using artificial mechanoreceptor modules capable of detecting wind pressure of exhalation in the case of pulmonary respiration and bending pressure in the case of abdominal breathing.

Mesoscale Frank-Kasper Crystal Structures from Dendron Assembly by Controlling Core Apex Interactions.

Single-component polymeric materials open up a great potential for self-assembly into mesoscale complex crystal structures that are known as Frank-Kasper (FK) phases. Predicting the packing structures of the soft-matter spheres, however, remains a challenge even when the molecular design is precisely known. Here, we investigate the role of the molecules' enthalpic interaction in determining the low-symmetry crystal structures. To this end, we synthesize architecturally asymmetric dendrons by varying their apex functionalities and examine the packing structures of the second-generation (G2) dendritic wedges. Our work shows that weakening the hydrogen bonding of the dendron apex makes the particles softer and smaller, and leads to the formation of various FK structures at lower temperatures, including the new observation of a FK C14 phase in the cone-shaped dendron systems. As a consequence of the free energy balance between the particle's interfacial tension and the chain's stretching, various packing structures are mainly tuned by designing the hydrogen bonding interaction.

Frank-Kasper Phases Identified in PDMS-b-PTFEA Copolymers with High Conformational Asymmetry.

In the search for the formation of Frank-Kasper phases from diblock copolymer self-assembly, a series of compositionally asymmetric poly(dimethylsiloxane)-b-poly(2,2,2-triflouroethyl acrylate)s (PDMS-b-PTFEAs) are synthesized to produce PDMS-rich phases with PDMS volume fractions (fPDMS ) ranging from 0.746 to 0.869. As determined by small-angle X-ray scattering analysis, the Frank-Kasper σ and C14 phases are identified at fPDMS = 0.796 and 0.851, respectively, plausibly due to high conformational asymmetry (ε ≈ 2.20) between the two blocks. Intriguingly, the σ phase develops during heating from a short-range liquid-like packing (LLP) state, whereas the C14 phase is achieved at room temperature, which are both followed by a disordering at higher temperatures. Based on thermal experiments from a super cooled disordered state, the findings further provide compelling evidence of an LLP-hexagonally packed cylinder-σ transition and a direct pathway to the C14 phase during heating from an LLP state.

Functional Circuitry on Commercial Fabric via Textile-Compatible Nanoscale Film Coating Process for Fibertronics.

Fabric-based electronic textiles (e-textiles) are the fundamental components of wearable electronic systems, which can provide convenient hand-free access to computer and electronics applications. However, e-textile technologies presently face significant technical challenges. These challenges include difficulties of fabrication due to the delicate nature of the materials, and limited operating time, a consequence of the conventional normally on computing architecture, with volatile power-hungry electronic components, and modest battery storage. Here, we report a novel poly(ethylene glycol dimethacrylate) (pEGDMA)-textile memristive nonvolatile logic-in-memory circuit, enabling normally off computing, that can overcome those challenges. To form the metal electrode and resistive switching layer, strands of cotton yarn were coated with aluminum (Al) using a solution dip coating method, and the pEGDMA was conformally applied using an initiated chemical vapor deposition process. The intersection of two Al/pEGDMA coated yarns becomes a unit memristor in the lattice structure. The pEGDMA-Textile Memristor (ETM), a form of crossbar array, was interwoven using a grid of Al/pEGDMA coated yarns and untreated yarns. The former were employed in the active memristor and the latter suppressed cell-to-cell disturbance. We experimentally demonstrated for the first time that the basic Boolean functions, including a half adder as well as NOT, NOR, OR, AND, and NAND logic gates, are successfully implemented with the ETM crossbar array on a fabric substrate. This research may represent a breakthrough development for practical wearable and smart fibertronics.

Three-Dimensional Fin-Structured Semiconducting Carbon Nanotube Network Transistor.

Three-dimensional (3-D) fin-structured carbon nanotube field-effect transistors (CNT-FETs) with purified 99.9% semiconducting CNTs were demonstrated on a large scale 8 in. silicon wafer. The fabricated 3-D CNT-FETs take advantage of the 3-D geometry and exhibit enhanced electrostatic gate controllability and superior charge transport. A trigated structure surrounding the randomly networked single-walled CNT channel was formed on a fin-like 3-D silicon frame, and as a result, the effective packing density increased to almost 600 CNTs/µm. Additionally, highly sensitive controllability of the threshold voltage (VTH) was achieved using a thin back gate oxide in the same silicon frame to control power consumption and enhance performance. Our results are expected to broaden the design margin of CNT-based circuit architectures for versatile applications. The proposed 3-D CNT-FETs can potentially provide a desirable alternative to silicon based nanoelectronics and a blueprint for furthering the practical use of emerging low-dimensional materials other than CNTs.

Physically Transient Memory on a Rapidly Dissoluble Paper for Security Application.

We report the transient memory device by means of a water soluble SSG (solid sodium with glycerine) paper. This material has a hydroscopic property hence it can be soluble in water. In terms of physical security of memory devices, prompt abrogation of a memory device which stored a large number of data is crucial when it is stolen because all of things have identified information in the memory device. By utilizing the SSG paper as a substrate, we fabricated a disposable resistive random access memory (RRAM) which has good data retention of longer than 106 seconds and cycling endurance of 300 cycles. This memory device is dissolved within 10 seconds thus it can never be recovered or replicated. By employing direct printing but not lithography technology to aim low cost and disposable applications, the memory capacity tends to be limited less than kilo-bits. However, unlike high memory capacity demand for consumer electronics, the proposed device is targeting for security applications. With this regards, the sub-kilobit memory capacity should find the applications such as one-time usable personal identification, authentication code storage, cryptography key, and smart delivery tag. This aspect is attractive for security and protection system against unauthorized accessibility.

Foldable and Disposable Memory on Paper.

Foldable organic memory on cellulose nanofibril paper with bendable and rollable characteristics is demonstrated by employing initiated chemical vapor deposition (iCVD) for polymerization of the resistive switching layer and inkjet printing of the electrode, where iCVD based on all-dry and room temperature process is very suitable for paper electronics. This memory exhibits a low operation voltage of 1.5 V enabling battery operation compared to previous reports and wide memory window. The memory performance is maintained after folding tests, showing high endurance. Furthermore, the quick and complete disposable nature demonstrated here is attractive for security applications. This work provides an effective platform for green, foldable and disposable electronics based on low cost and versatile materials.

Vertically Integrated Nanowire-Based Unified Memory.

A vertically integrated nanowire-based device for multifunctional unified memory that combine dynamic random access memory (DRAM) and flash memory in a single transistor is demonstrated for the first time. The device utilizes a gate-all-around (GAA) structure that completely surrounds the nanowire; the structure is built on a bulk silicon wafer. A vertically integrated unified memory (VIUM) device composed of five-story channels was fabricated via the one-route all-dry etching process (ORADEP) with reliable reproducibility, stiction-free stability, and high uniformity. In each DRAM and flash memory operation, the five-story VIUM showed a remarkably enhanced sensing current drivability compared with one-story unified memory (UM) characteristics. In addition to each independent memory mode, the switching endurance of the VIUM was evaluated in the unified mode, which alternatively activates two memory modes, resulting in an even higher sensing memory window than that of the UM. In addition to our previous work on a logic transistor joining high performance with good scalability, this work describes a novel memory hierarchy design with high functionality for system-on-chip (SoC) architectures, demonstrating the practicality and versatility of the vertically integrated nanowire configuration for use in various applications.

Electrothermal Annealing (ETA) Method to Enhance the Electrical Performance of Amorphous-Oxide-Semiconductor (AOS) Thin-Film Transistors (TFTs).

An electro-thermal annealing (ETA) method, which uses an electrical pulse of less than 100 ns, was developed to improve the electrical performance of array-level amorphous-oxide-semiconductor (AOS) thin-film transistors (TFTs). The practicality of the ETA method was experimentally demonstrated with transparent amorphous In-Ga-Zn-O (a-IGZO) TFTs. The overall electrical performance metrics were boosted by the proposed method: up to 205% for the trans-conductance (gm), 158% for the linear current (Ilinear), and 206% for the subthreshold swing (SS). The performance enhancement were interpreted by X-ray photoelectron microscopy (XPS), showing a reduction of oxygen vacancies in a-IGZO after the ETA. Furthermore, by virtue of the extremely short operation time (80 ns) of ETA, which neither provokes a delay of the mandatory TFTs operation such as addressing operation for the display refresh nor demands extra physical treatment, the semipermanent use of displays can be realized.