Nanowatt-Level Photoactivated Gas Sensor Based on Fully-Integrated Visible MicroLED and Plasmonic Nanomaterials.

Photoactivated gas sensors that are fully integrated with micro light-emitting diodes (µLED) have shown great potential to substitute conventional micro/nano-electromechanical (M/NEMS) gas sensors owing to their low power consumption, high mechanical stability, and mass-producibility. Previous photoactivated gas sensors mostly have utilized ultra-violet (UV) light (250-400 nm) for activating high-bandgap metal oxides, although energy conversion efficiencies of gallium nitride (GaN) LEDs are maximized in the blue range (430-470 nm). This study presents a more advanced monolithic photoactivated gas sensor based on a nanowatt-level, ultra-low-power blue (λpeak  = 435 nm) µLED platform (µLP). To promote the blue light absorbance of the sensing material, plasmonic silver (Ag) nanoparticles (NPs) are uniformly coated on porous indium oxide (In2 O3 ) thin films. By the plasmonic effect, Ag NPs absorb the blue light and spontaneously transfer excited hot electrons to the surface of In2 O3 . Consequently, high external quantum efficiency (EQE, ≈17.3%) and sensor response (ΔR/R0 (%) = 1319%) to 1 ppm NO2 gas can be achieved with a small power consumption of 63 nW. Therefore, it is highly expected to realize various practical applications of mobile gas sensors such as personal environmental monitoring devices, smart factories, farms, and home appliances.

Wafer-scale, highly uniform, and well-arrayed suspended nanostructures for enhancing the performance of electronic devices.

Suspended nanostructures play an important role in enhancing the performance of a diverse group of nanodevices. However, realizing a good arrangement and suspension for nanostructures of various shapes remains a significant challenge. Herein, a rapid and simple method for fabricating wafer-scale, highly uniform, well-arrayed suspended nanostructures via nanowelding lithography is reported. Suspended nanostructures with various shapes (nanowires, nanoholes, nanomesh, and nanofilms) and materials (gold, silver, and palladium metals) were employed to demonstrate the applicability of our method. Moreover, gas sensors and thermoacoustic speakers with suspended nanowires outperformed those with unsuspended nanostructures. The proposed method is expected to help advance the development of future nanodevices based on suspended nanostructures.

Quantitative Photothermal Characterization with Bioprinted 3D Complex Tissue Constructs for Early-Stage Breast Cancer Therapy Using Gold Nanorods.

Plasmonic photothermal therapy (PPTT) using gold nanoparticles (AuNPs) has shown great potential for use in selective tumor treatment, because the AuNPs can generate destructive heat preferentially upon irradiation. However, PPTT using AuNPs has not been added to practice, owing to insufficient heating methods and tissue temperature measurement techniques, leading to unreliable and inaccurate treatments. Because the photothermal properties of AuNPs vary with laser power, particle optical density, and tissue depth, the accurate prediction of heat generation is indispensable for clinical treatment. In this report, bioprinted 3D complex tissue constructs comprising processed gel obtained from porcine skin and human decellularized adipose tissue are presented for characterization of the photothermal properties of gold nanorods (AuNRs) having an aspect ratio of 3.7 irradiated by a near-infrared laser. Moreover, an analytical function is suggested for achieving PPTT that can cause thermal damage selectively on early-stage human breast cancer by regulating the heat generation of the AuNRs in the tissue.

Influence of Self-Heating Effect on Interface Trap Generation in Highly Flexible Single-Crystalline Si Nanomembrane Transistors.

We analyze the interface trap states generated by the self-heating effect in flexible single-crystalline Si nanomembrane (sc-Si NM) transistors. Despite the excellent device performance (Subthreshold swing: ~61 mV/dec, Ion/off: ~109, Nit: ~5 × 1010 cm-2, µeff: ~250 cm²/V·s) and mechanical flexibility (RB,min ═ 1 mm) of sc-Si NM transistors on a polymer substrate, they are vulnerable to thermal reliability issues due to the poor thermal conductivity (κ < 1 W/m·K) of the polymer substrate. Understanding the detailed mechanism driving heat-related device degradation is key to improving device reliability, life expectancy, and overall device performance. Thus, a charge pumping method was employed to systematically analyze the device degradation caused by the self-heating effect. This enabled the interface trap density to be investigated for the flexible sc-Si NM transistors on a polymer substrate after a bias stress. For comparison, a heat spreading layer (HSL) made using a 1-µm thick Ag film (κ~400 W/m·K) was integrated into the sc-Si NM device to mitigate the self-heating effect. The results showed that the interface trap density was proportional to the self-heating effect. This facilitated the fundamental understanding of the self-heating effect of flexible sc-Si NM transistors, opening a robust route to realizing high performance flexible devices using sc-Si NM.

Gold nanorods-conjugated TiO2 nanoclusters for the synergistic combination of phototherapeutic treatments of cancer cells.

BACKGROUND: Recently, a combination of photodynamic therapy (PDT) and photothermal therapy (PTT) to generate reactive oxygen species (ROS) and heat to kill cancer cells, respectively has attracted considerable attention because it gives synergistic effects on the cancer treatment by utilizing the radiation of nontoxic low-energy photons such as long wavelength visible light and near IR (NIR) penetrating into subcutaneous region. For the effective combination of the phototherapies, various organic photosensitizer-conjugated gold nanocomplexes have been developed, but they have still some disadvantages due to photobleaching and unnecessary energy transfer of the organic photosensitizers. RESULTS: In this study, we fabricated novel inorganic phototherapeutic nanocomplexes (Au NR-TiO2 NCs) by conjugating gold nanorods (Au NRs) with defective TiO2 nanoparticle clusters (d-TiO2 NP clusters) and characterized their optical and photothermal properties. They were observed to absorb a broad range of visible light and near IR (NIR) from 500 to 1000 nm, exhibiting the generation of ROS as well as the photothermal effect for the simultaneous application of PDT and PTT. The resultant combination of PDT and PTT treatments of HeLa cells incubated with the nanocomplexes caused a synergistic increase in the cell death compared to the single treatment. CONCLUSION: The higher efficacy of cell death by the combination of PDT and PTT treatments with the nanocomplexes is likely attributed to the increases of ROS generation from the TiO2 NCs with the aid of local surface plasma resonance (LSPR)-induced hot electrons and heat generation from Au NRs, suggesting that Au NR-TiO2 NCs are promising nanomaterials for the in vivo combinatorial phototherapy of cancer.

Laser Scanning Confocal Thermoreflectance Microscope for the Backside Thermal Imaging of Microelectronic Devices.

In this paper, we report on a confocal thermoreflectance imaging system that can examine the thermal characteristics of microelectronic devices by penetrating the backside of a device through the substrate. In this system, the local reflectivity variations due to heat generation in the device are measured point by point by a laser scanning confocal microscope capable of eliminating out-of-focus reflections and the thermoreflectance is extracted via Fourier-domain signal processing. In comparison to the conventional widefield thermoreflectance microscope, the proposed laser scanning confocal thermoreflectance microscope improves the thermoreflectance sensitivity by ~23 times and the spatial resolution by ~25% in backside thermoreflectance measurements.

Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors.

A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this 'electrical activation', the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 °C to 130 °C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 °C for 1 hour. Without conventional high temperature annealing or electrical activation, current-voltage curves do not show transfer characteristics. However, electrically activated a-IGZO TFTs show superior electrical characteristics, comparable to the reference TFTs annealed at 280 °C for 1 hour. This effect is a result of the lower activation energy, and efficient transfer of electrical and thermal energy to a-IGZO TFTs. With this approach, superior low-temperature a-IGZO TFTs are fabricated successfully.

Quantitative temperature measurement of multi-layered semiconductor devices using spectroscopic thermoreflectance microscopy.

Thermoreflectance microscopy is essential in understanding the unpredictable local heating generation that occurs during microelectronic device operation. However, temperature measurements of multi-layered semiconductor devices represent a challenge because the thermoreflectance coefficient is quite small and is dramatically changed by the optical interference inside transparent layers of the device. Therefore, we propose a spectroscopic thermoreflectance microscopy system using a systematic approach for improving the quantitative temperature measurement of multi-layered semiconductor devices. We demonstrate the quantitative measurement of the temperature profile for physical defects on thin-film polycrystalline silicon resistors via thermoreflectance coefficient calibration and effective coefficient κ estimation.