RESUMO
[Co(0.2 nm)∕Pd(0.8 nm)](20) multilayered films on 15 nm Pd-TiN seed layers were fabricated by dc magnetron sputtering without heating the substrate. The effects of TiN content on microstructure and magnetic properties of the [Co∕Pd] multilayered media were studied. By increasing the TiN content in the Pd-TiN seed layer to an optimum level, coercivity of the [Co∕Pd] multilayered media increased to 6.7 kOe. However, further increase of TiN content beyond 22 vol % reduced coercivity (Hc), implying that there exists a critical TiN concentration to enhance the magnetic property of the [Co∕Pd] multilayered media. Transmission electron microscopic observations revealed that well-isolated [Co∕Pd] multilayered grains with apparent grain boundaries were achieved by controlling the TiN content in the Pd-TiN seed layer. The average grain diameter was 8 nm with a dispersion of 11.2%, grown on the Pd-TiN seed layer with TiN content of 22 vol %.
RESUMO
A novel stress-induced method to grow semimetallic Bi nanowires along with an analysis of their transport properties is presented. Single crystalline Bi nanowires were found to grow on as-sputtered films after thermal annealing at 260-270 degrees C. This was facilitated by relaxation of stress between the film and the thermally oxidized Si substrate that originated from a mismatch of the thermal expansion. The diameter-tunable Bi nanowires can be produced by controlling the mean grain size of the film, which is dependent upon the thickness of the film. Four-terminal devices based on individual Bi nanowires were found to exhibit very large transverse and longitudinal ordinary magnetoresistance, indicating high-quality, single crystalline Bi nanowires. Unusual transport properties, including a mobility value of 76900 cm(2)/(V s) and a mean free path of 1.35 mum in a 120 nm Bi nanowire, were observed at room temperature.
