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1.
Clin Pharmacol Ther ; 109(5): 1274-1281, 2021 05.
Artigo em Inglês | MEDLINE | ID: mdl-33064299

RESUMO

The aim of this trial was to investigate the safety, tolerability, and capability of serum uric acid (UA) elevation of inosine 5'-monophosphate (IMP) in multiple system atrophy (MSA). The IMPROVE-MSA trial was a randomized, double-blind, placebo-controlled trial in patients with MSA with no history of hyperuricemia-related disorders. The participants were assigned to placebo (n = 25) or IMP (n = 30) in a 1 to 1 ratio, and then followed up for 24 weeks. The primary end points included safety, tolerability, and alteration of the serum UA level during the follow-up period. The secondary end points were changes in scores of the unified MSA rating scale (UMSARS) and the Mini-Mental Status Examination (MMSE) and Montreal Cognitive Assessment (MoCA). The total number of adverse events (AEs) and serious AEs was comparable between the active and placebo groups. Serum UA level (mg/dL) was significantly increased from baseline (active vs. placebo, 4.57 vs. 4.58; P = 0.98) to study end point (6.96 vs. 4.43; P < 0.001) in the active group compared with the placebo group (time × group interaction; P < 0.001). The change in UMSARS scores did not differ between the active and placebo groups. However, the active group showed better alterations in MoCA scores with nominal significance (P < 0.001) and tendency for better alterations in MMSE scores (P = 0.09) than the placebo group. Our data demonstrated that IMP treatment was generally safe and well-tolerated in patients with MSA. A further trial with a long-term follow-up is required to examine whether UA elevation will slow clinical progression in early MSA.


Assuntos
Inosina Monofosfato/efeitos adversos , Inosina Monofosfato/uso terapêutico , Atrofia de Múltiplos Sistemas/tratamento farmacológico , Ácido Úrico/sangue , Idoso , Feminino , Humanos , Masculino , Pessoa de Meia-Idade , Atrofia de Múltiplos Sistemas/sangue , Resultado do Tratamento
2.
Nanotechnology ; 28(14): 145602, 2017 Apr 07.
Artigo em Inglês | MEDLINE | ID: mdl-28276339

RESUMO

A network structure consisting of nanomaterials with a stable structural support and charge path on a large area is desirable for various electronic and optoelectronic devices. Generally, network structures have been fabricated via two main strategies: (1) assembly of pre-grown nanostructures onto a desired substrate and (2) direct growth of nanomaterials onto a desired substrate. In this study, we utilized the surface defects of graphene to form a nano-network of ZnO via atomic layer deposition (ALD). The surface of pure and structurally perfect graphene is chemically inert. However, various types of point and line defects, including vacancies/adatoms, grain boundaries, and ripples in graphene are generated by growth, chemical or physical treatments. The defective sites enhance the chemical reactivity with foreign atoms. ZnO nanoparticles formed by ALD were predominantly deposited at the line defects and agglomerated with increasing ALD cycles. Due to the formation of the ZnO nano-network, the photocurrent between two electrodes was clearly changed under UV irradiation as a result of the charge transport between ZnO and graphene. The line patterned ZnO/graphene (ZnO/G) nano-network devices exhibit sensitivities greater than ten times those of non-patterned structures. We also confirmed the superior operation of a fabricated flexible photodetector based on the line patterned ZnO/G nano-network.

3.
Sci Rep ; 5: 11032, 2015 Jun 11.
Artigo em Inglês | MEDLINE | ID: mdl-26067060

RESUMO

Polymer light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nano-material without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions.

4.
Nanoscale ; 6(24): 15175-80, 2014 Dec 21.
Artigo em Inglês | MEDLINE | ID: mdl-25373477

RESUMO

In this work, we have demonstrated the results of several positive effects that arise from the addition of graphene quantum dots (GQDs) to solution-processed small molecule bulk-heterojunction (SM-BHJ) solar cells fabricated from a p-DTS(FBTTh(2))(2)/[6,6]-phenyl C(71) butyric acid methyl-ester (PC(71)BM). The device with an optimized ratio of GQDs exhibits increased current density and fill factor owing to 10% improved external quantum efficiency (EQE) and induction of a favorable SM-BHJ morphology. Additionally, the multiple scattering of the GQDs in the SM-BHJ leads to longer optical pathlengths according to the analysis of diffuse reflectance spectra and UV/Vis absorption spectra. The GQD inserted SM-BHJ film at the optimized concentration exhibits decreased charge transport resistance significantly by impedance measurements with effective charge extraction in the device which contributes to 15% enhancement of power conversion efficiency (PCE).

5.
J Thorac Imaging ; 21(4): 300-2, 2006 Nov.
Artigo em Inglês | MEDLINE | ID: mdl-17110856

RESUMO

Behçet disease is a multisystem disease, which can cause cardiovascular manifestations such as arterial occlusion or aneurysm. This report describes multidetector-row computed tomography findings of an unruptured aneurysm of the left Valsalva sinus which was associated with Behçet disease. A 45-year-old woman with Behçet disease had an aneurysm of the left Valsalva sinus which constricted the left anterior descending artery. The multidetector-row computed tomography was useful in detecting the aneurysm and complications, and was beneficial in the evaluation of patency in the coronary arteries after surgery.


Assuntos
Aneurisma Aórtico/etiologia , Síndrome de Behçet/complicações , Seio Aórtico/patologia , Tomografia Computadorizada por Raios X , Aneurisma Aórtico/diagnóstico por imagem , Aneurisma Aórtico/cirurgia , Síndrome de Behçet/diagnóstico por imagem , Síndrome de Behçet/cirurgia , Angiografia Coronária , Estenose Coronária/diagnóstico por imagem , Estenose Coronária/etiologia , Estenose Coronária/cirurgia , Feminino , Humanos , Processamento de Imagem Assistida por Computador , Anastomose de Artéria Torácica Interna-Coronária , Pessoa de Meia-Idade , Seio Aórtico/diagnóstico por imagem , Seio Aórtico/cirurgia
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