RESUMO
As semiconductor device architecture develops, from planar field-effect transistors (FET) to FinFET and gate-all-around (GAA), there is an increased need to measure 3D structure sidewalls precisely. Here, we present a 3-Dimensional Atomic Force Microscope (3D-AFM), a powerful 3D metrology tool to measure the sidewall roughness (SWR) of vertical and undercut structures. First, we measured three different dies repeatedly to calculate reproducibility in die level. Reproducible results were derived with a relative standard deviation under 2%. Second, we measured 13 different dies, including the center and edge of the wafer, to analyze SWR distribution in wafer level and reliable results were measured. All analysis was performed using a novel algorithm, including auto flattening, sidewall detection, and SWR calculation. In addition, SWR automatic analysis software was implemented to reduce analysis time and to provide standard analysis. The results suggest that our 3D-AFM, based on the tilted Z scanner, will enable an advanced methodology for automated 3D measurement and analysis.
RESUMO
Nanoscale patterning with massively parallel 2D array tips is of significant interest in scanning probe lithography. A challenging task for tip-based large area nanolithography is maintaining parallel tip arrays at the same contact point with a sample substrate in order to pattern a uniform array. Here, polymer pen lithography is demonstrated with a novel leveling method to account for the magnitude and direction of the total applied force of tip arrays by a multipoint force sensing structure integrated into the tip holder. This high-precision approach results in a 0.001° slope of feature edge length variation over 1 cm wide tip arrays. The position sensitive leveling operates in a fully automated manner and is applicable to recently developed scanning probe lithography techniques of various kinds which can enable "desktop nanofabrication."
