Facet-specific ligand dynamics: scaling the descriptors of Cs2AgBiBr6 nanocrystals.

Facet control by primary amines can bolster the optoelectronic parameters of A2BIB'IIIX6 perovskite nanocrystals (NCs) with large indirect bandgaps. The 18-C amine competitively attaches to the (222) facet of Cs2AgBiBr6 (CABB) NCs, 16-C and 14-C bind to (400) and (440), and 12-C binds to (400). The NCs with only the (400) facet decrease the bandgap and exciton binding energy by 0.26 eV and 15 meV, respectively.

Aliovalent Ta-Doping-Engineered Oxygen Vacancy Configurations for Ultralow-Voltage Resistive Memory Devices: A DFT-Supported Experimental Study.

Alteration of transport properties of any material, especially metal oxides, by doping suitable impurities is not straightforward as it may introduce multiple defects like oxygen vacancies (Vo) in the system. It plays a decisive role in controlling the resistive switching (RS) performance of metal oxide-based memory devices. Therefore, a judicious choice of dopants and their atomic concentrations is crucial for achieving an optimum Vo configuration. Here, we show that the rational designing of RS memory devices with cationic dopants (Ta), in particular, Au/Ti1-xTaxO2-δ/Pt devices, is promising for the upcoming non-volatile memory technology. Indeed, a current window of ∼104 is realized at an ultralow voltage as low as 0.25 V with significant retention (∼104 s) and endurance (∼105 cycles) of the device by considering 1.11 at % Ta doping. The obtained device parameters are compared with those in the available literature to establish its excellent performance. Furthermore, using detailed experimental analyses and density functional theory (DFT)-based first-principles calculations, we comprehend that the meticulous presence of Vo configurations and the columnar-like dendritic structures is crucial for achieving ultralow-voltage bipolar RS characteristics. In fact, the dopant-mediated Vo interactions are found to be responsible for the enhancement in local current conduction, as evidenced from the DFT-simulated electron localization function plots, and these, in turn, augment the device performance. Overall, the present study on cationic-dopant-controlled defect engineering could pave a neoteric direction for future energy-efficient oxide memristors.

Effect of cobalt doping on the enhanced energy storage performance of 2D vanadium diselenide: experimental and theoretical investigations.

Vanadium Diselenide (VSe2) is a prominent candidate in the 2D transition metal dichalcogenides family for energy storage applications. Herein, we report the experimental and theoretical investigations on the effect of cobalt doping in 1T-VSe2. The energy storage performance in terms of specific capacitance, stability and energy and power density is studied. It is observed that 3% Co doped VSe2exhibits better energy storage performance as compared to other concentrations, with a specific capacitance of âˆ¼193 F g-1in a two-electrode symmetric configuration. First-principles Density Functional Theory based simulations support the experimental findings by suggesting an enhanced quantum capacitance value after the Co doping in the 1T-VSe2. By making use of the advantages of the specific electrode materials, a solid state asymmetric supercapacitor (SASC) is also assembled with MoS2as the negative electrode. The assembled Co-VSe2//MoS2SASC device shows excellent energy storage performance with a maximum energy density of 33.36 Wh kg-1and a maximum power density of 5148 W kg-1with a cyclic stability of 90% after 5000 galvano static charge discharge cycles.

Energy storage performance of 2D MoS2 and carbon nanotube heterojunctions in symmetric and asymmetric configuration.

Excellent cyclic stability and fast charge/discharge capacity demonstrated by supercapacitors foster research interest into new electrode materials with 100% cycle life and high specific capacitance. We report an improvement in the electrochemical performance of MoS2/multiwalled carbon nanotubes (MWCNT) nanohybrid and intensively explored its performance in symmetric and asymmetric supercapacitor (ASC) assembly. The symmetric assembly of MoS2/MWCNT exhibits capacitance of around 274.63 F g-1 at 2 A g-1 with higher specific energy/power outputs (20.70 Wh kg-1/1.49 kW kg-1) as compared to the supercapacitor based on pristine MoS2 (5.82 Wh kg-1/1.07 kW kg-1). On the other hand, a unique all-carbon-based ASC assembled with MoS2/MWCNT and VSe2/MWCNT composite with K2SO4 as electrolyte delivers the highest energy density of 32.18 Wh kg-1 at a power density of 1.121 kW kg-1 with exceptional cycling stability and excellent retention of about 98.43% even after 5000 cycles. These outstanding results demonstrate the excellent electrochemical properties of both symmetric and asymmetric systems with high energy density and performance, which further enable them to be a potential candidate for supercapacitor applications.

Control of Functionalities in GO: Effect of Bronsted Acids as Supported by Ab Initio Simulations and Experiments.

Graphene oxide (GO) is an attractive precursor for graphene, provided by the well-known wet-chemical oxidative process. The intercalation of acid in graphite is considered as a crucial step, and its subsequent oxidation holds special relevance in synthesis. So far, the above chemistry is dominated by usage of H2SO4. Recently, H3PO4 appeared as a suitable intercalant for graphite. However, its role is not well understood in the formation of GO, especially when present as a co-acid with H2SO4. Additionally, a relatively lower toxicity of H3PO4 as compared to H2SO4, elimination of toxic NaNO3 usage, and a facile purification protocol are encouraging in terms of low-cost production of GO with a reduced environmental impact. Here, we report the systematic synthesis and characterization of GOs prepared with the variation in the ratio of H2SO4 and H3PO4. Ab initio simulations revealed that intercalation is primarily affected because of the usage of a mixture of co-acids. Interestingly, the ratio of the acids dictated the nature of the functionalities, extent of the defects, and morphology of the GOs, accounting for a pronounced effect on thermal stability, contact angle, zeta potential, and hydrodynamic size. The oxidation mechanism showed a predominance of H2SO4 content, whereas H3PO4 is found to mainly govern the intercalation of graphite, thereby affecting the acid-based intercalation-oxidation chemistry of graphite. The as-prepared GO suspension exhibited a high adsorption capacity for methylene blue dye removal in water, suggesting its potential as an adsorbent material in water treatment. The utility of the two acids affects the acid-based intercalation-oxidation chemistry of graphite and simultaneously may open up new opportunities for synthesized GOs, on tenets of green chemistry, in a wide arena of applications.

One-Dimensional-Sn2X3 (X = S, Se) as Promising Optoelectronic and Thermoelectronic Materials: A Comparison with Three-Dimensional-Sn2X3.

Ever since the discovery of two-dimensional (2D) material graphene, there has been huge interest in the exploration of low-dimensional materials that can be exfoliated from their three-dimensional counterpart with enriched properties due to quantum confinement. Two members of the Sn-S family, Pnma-SnS and P3̅ m1-SnS2 that possess a layered structure with 2D nanosheets stacked via weak van der Waals (vdW) interactions, have widely been studied in this regard. The other member, Pnma-Sn2S3, comprising one-dimensional (1D) nanochains bound via vdW interactions, has never been investigated in the view of exfoliated 1D analogue. In this work, we therefore comprehensively studied 1D-Sn2X3 (X = S and Se) nanochains and demonstrated them to be stable and exfoliable from their bulk counterpart. Further, it is also shown that the exfoliated 1D nanochains can easily be identified from their bulk counterpart using Raman, infrared, and X-ray spectroscopies. Our calculations predict a direct band gap of 2.35 eV (1.67 eV) for 1D-Sn2S3 (1D-Sn2Se3) nanochains under the Heyd, Scuseria, and Ernzerhof functional, with a broad absorption region lying between 2 and 8 eV, lower reflection, high charge-carrier mobility with ambipolar characteristics, as well as a larger value of the Seebeck coefficient and a smaller value of the thermal conductivity, resulting in a better thermoelectric figure of merit. These interesting electronic, optical, transport, and thermoelectric properties make 1D-Sn2X3 nanochains a potential candidate for the application in future optoelectronic and thermoelectronic devices, in fact, better than three-dimensional (3D)-Sn2X3 for few of the applications. Moreover, 3D-Sn2Se3 is also investigated in detail in this work, which to the best of our knowledge has not been done before.

Enhanced and Faster Potassium Storage in Graphene with Respect to Graphite: A Comparative Study with Lithium Storage.

The mechanisms, extent, and rate of K-storage in graphenic and graphitic carbons, as direct comparisons with Li-storage in the same structures/materials, in terms of the effects of dimensional scale and presence of surface and exposed edge sites have been brought to the fore via DFT-based simulations, duly complemented and supplemented by experimental studies. The simulation indicates feasibilities toward K-storage on single-layer graphene (SLG) at a concentration greater than that in graphite ( i. e., beyond KC8), the formation of more than one layer of K on SLG, and K-storage on both the surfaces of SLG, unlike that for Li-storage. Simulations done with graphene nanoribbons (GNRs) indicate that K can get hosted on the graphene surfaces and at the exposed "stepped" edges, in addition to the "classical" K-intercalation in-between the constituent graphene layers. Accordingly, the computation studies indicate considerably enhanced K-storage "specific capacity" of GNR, as compared to bulk graphite, with the capacity decreasing with the increase in number of graphene layers. Electrochemical potassiation/depotassiation of well-ordered fairly pristine few layers graphene films (FLG; ∼6-7 layers) confirms the simultaneous occurrences of bulk ( i. e., K-intercalation) and surface storage of K, resulting in reversible K-storage capacity being greater than that of thicker bulk graphite films by a factor of ∼2.5. This is in agreement with the predictions from DFT. However, this increment is less compared to that for Li-storage, again in accordance with the DFT results. Our measurements indicate lower diffusivity of K, as compared to Li, in the same graphitic structure by an order of magnitude. Accordingly, the rate capability of K-storage in graphite has been found to be considerably inferior to Li-storage, which renders the reduction in dimensional scale even more important in the case of K-storage, as observed here with FLG.

Strategical Designing of Donor-Acceptor-Donor Based Organic Molecules for Tuning Their Linear Optical Properties.

Low-energy linear absorption spectrum of a series of 48 donor-acceptor-donor (D-A-D) scheme based thiophone-benzo(bis-)X-diazole molecules with X = O, S, Se, or Te are calculated using time dependent density functional theory in order to propose strategical design of molecules that can efficiently absorb light in the infrared and visible region of the solar spectrum. Our study establishes that optical properties of the D-A-D based organic molecules significantly depend on the donor-to-acceptor (D/A) ratio and the strength of the acceptor moiety. Thus, by choice of a suitable D/A ratio and type of the acceptor moiety, the linear absorption spectrum can be largely shifted, in general, while the optical gap can be engineered over a wide energy range of ∼0.2-2.3 eV, in particular. It is also noticed that the increase in acceptor units (i.e., when D/A ≤ 1) leads to increase in steric hindrance in between them. This, in turn, disrupts the effective conjugation length and increases the optical gap. However, this effect is found to dominate strongly in the bis-configurations of the molecules as compared to the nonbis compositions. In order to reduce this effect for rational designing of effective D-A-D type chromophores with less steric hindrance, the role of π-conjugated ethylene (-CH═CH-) linkage/spacer between the A-A units is explored further. Here, it is found that introduction of such linkage substantially decreases the steric hindrance and, thereby, the optical gap as well. Besides this, our study also highlights and explains the impact of the acceptor moiety in improving the absorption capabilities of these molecules in the low-energy region.

Understanding the Lithiation of the Sn Anode for High-Performance Li-Ion Batteries with Exploration of Novel Li-Sn Compounds at Ambient and Moderately High Pressure.

Volume expansion and elastic softening of the Sn anode on lithiation result in mechanical degradation and pulverization of Sn, affecting the overall performance of Li-Sn batteries. It can, however, be overcome with the help of void space engineering by using a LixSn phase as the prelithiated anode, where an optimal value for x is desired. Currently, Li4.25Sn is known as the most lithiated Li-Sn compound, but recent studies have shown that at high pressure, several exotic and unusual stoichiometries can be obtained that may even survive decompression from high-to-ambient pressure with improved mechanical properties. With a belief that hydrostatic pressure may help in realizing Li-richer (x > 4.25) Li-Sn compounds as well, we performed extensive calculations using an evolutionary algorithm and density functional theory to explore all stable and low-energy metastable Li-Sn compositions at pressures ranging from 1 atm to 20 GPa. This not only helped us in enriching the chemistry of a Li-Sn system, in general, but also in improving our understanding of the reaction mechanism in Li-Sn batteries, in particular, and guiding a route to improve the performance of Li-ion batteries through synthesis of Li-rich phases. Besides the experimentally known Li-Sn compounds, our study reveals the existence of five unreported stoichiometries (Li8Sn3, Li3Sn1, Li4Sn1, Li5Sn1, and Li7Sn1) and their associated crystal structures at ambient and high pressure. Although Li8Sn3 has been identified as one of the most stable Li-Sn compound in the entire pressure range (1 atm-20 GPa) with R3̅m symmetry, the Li-rich compounds like Li3Sn1-P2/m, Li4Sn1-R3̅m, Li5Sn1-C2/m, and Li7Sn1-C2/m are predicted to be metastable at ambient pressure and found to get thermodynamically stable at high pressure. Here, the discovery of Li5Sn1 and Li7Sn1 opens up the possibility to integrate them as a prelithiated anode for efficiently preventing electrochemical pulverization, as compared to the experimentally known highest lithiated compound, Li17Sn4.

Impact of Cl Doping on Electrochemical Performance in Orthosilicate (Li2FeSiO4): A Density Functional Theory Supported Experimental Approach.

Safe and high-capacity cathode materials are a long quest for commercial lithium-ion battery development. Among various searched cathode materials, Li2FeSiO4 has taken the attention due to optimal working voltage, high elemental abundance, and low toxicity. However, as per our understanding and observation, the electrochemical performance of this material is significantly limited by the intrinsic low electronic conductivity and slow lithium-ion diffusion, which limits the practical capacity (a theoretical value of ∼330 mAh g-1). In this report, using first-principles density functional theory based approach, we demonstrate that chlorine doping on oxygen site can enhance the electronic conductivity of the electrode and concurrently improve the electrochemical performance. Experimentally, X-ray diffraction, X-ray photoelectron spectroscopy, and field-emission gun scanning electron microscopy elemental mapping confirms Cl doping in Li2-xFeSiO4-xClx/C (x ≤ 0.1), while electrochemical cycling performance demonstrated improved performance. The theoretical and experimental studies collectively predict that, via Cl doping, the lithium deinsertion voltage associated with the Fe2+/Fe3+ and Fe3+/Fe4+ redox couples can be reduced and electronic conductivity can be enhanced, which opens up the possibility of utilization of silicate-based cathode with carbonate-based commercial electrolyte. In view of potential and electronic conductivity benefits, our results indicate that Cl doping can be a promising low-cost method to improve the electrochemical performance of silicate-based cathode materials.

An experimental and computational study to understand the lithium storage mechanism in molybdenum disulfide.

The lithium storage mechanism in molybdenum disulfide (MoS(2)) has been comprehensively investigated as the existing conversion-based storage mechanism is unable to explain the reason behind its high practical capacity, high polarization losses, and the change in the discharge profile after the 1(st) charge-discharge cycle. To resolve these issues and to gain a deeper understanding of MoS(2)-based Li-ion batteries, for the first time, we have studied the reaction mechanism of the MoS(2) anode using various experimental techniques such as XRD, Raman spectroscopy, electrochemical impedance spectroscopy, XANES, and EXAFS, as well as ab initio density functional theory based calculations. On the basis of the results presented here, and in line with some experimental findings, we find that the reaction of MoS(2) with Li is not as simple as with usual metal oxide based conversion reactions, but that the pathway of the conversion reaction changes after the first discharge process. In the first discharge process, lithiation is initiated by a limited intercalation process, followed by a conversion reaction that produces molybdenum nanoparticles (Mo) and lithium sulfide (Li(2)S). Whereas, unlike oxide-based conversion materials, MoS(2) does not transverse back during the delithiation process. Indeed, instead of MoS(2) formation, we identified the presence of polysulfur after the complete cycle. In consecutive cycles, polysulfur reacts with lithium and forms Li(2)S/Li(2)S(2), and this Li-S reaction is found to be highly reversible in nature and the only source of the high practical capacity observed in this electrode. To validate our experimental findings, an atomic scale ab initio computational study was also carried out, which likewise suggests that Li first intercalates between the MoS(2) layers but that after a certain concentration, it reacts with MoS(2) to form Li(2)S. The calculations also support the non-reversibility of the conversion reaction, by showing that Mo + Li(2)S formation is energetically more favorable than the re-formation of MoS(2) + Li.

Li segregation induces structure and strength changes at the amorphous Si/Cu interface.

The study of interfacial properties, especially of their change upon lithiation, is a fundamentally significant and challenging topic in designing heterogeneous nanostructured electrodes for lithium ion batteries. This issue becomes more intriguing for Si electrodes, whose ultrahigh capacity is accompanied by large volume expansion and mechanical stress, threatening with delamination of silicon from the metal current collector and failure of the electrode. Instead of inferring interfacial properties from experiments, in this work, we have combined density functional theory (DFT) and ab initio molecular dynamics (AIMD) calculations with time-of-flight secondary ion mass spectrometry (TOF-SIMS) measurements of the lithium depth profile, to study the effect of lithiation on the a-Si/Cu interface. Our results clearly demonstrate Li segregation at the lithiated a-Si/Cu interface (more than 20% compared to the bulk concentration). The segregation of Li is responsible for a small decrease (up to 16%) of the adhesion strength and a dramatic reduction (by one order of magnitude) of the sliding resistance of the fully lithiated a-Si/Cu interface. Our results suggest that this almost frictionless sliding stems from the change of the bonding nature at the interface with increasing lithium content, from directional covalent bonding to uniform metallic. These findings are an essential first step toward an in-depth understanding of the role of lithiation on the a-Si/Cu interface, which may contribute in the development of quantitative electrochemical mechanical models and the design of nonfracture-and-always-connected heterogeneous nanostructured Si electrodes.

Tuning the electronic properties of semiconducting transition metal dichalcogenides by applying mechanical strains.

Semiconducting transition metal dichalcogenides (TMDs) are emerging as the potential alternatives to graphene. As in the case of graphene, the monolayer of TMDs can easily be exfoliated using mechanical or chemical methods, and their properties can also be tuned. At the same time, semiconducting TMDs (MX(2); M = Mo, W and X = S, Se, Te) possess an advantage over graphene in that they exhibit a band gap whose magnitude is appropriate for applications in the opto-electronic devices. Using ab initio simulations, we demonstrate that this band gap can be widely tuned by applying mechanical strains. While the electronic properties of graphene remain almost unaffected by tensile strains, we find TMDs to be sensitive to both tensile and shear strains. Moreover, compared to that of graphene, a much smaller amount of strain is required to vary the band gap of TMDs. Our results suggest that mechanical strains reduce the band gap of semiconducting TMDs causing an direct-to-indirect band gap and a semiconductor-to-metal transition. These transitions, however, significantly depend on the type of applied strain and the type of chalcogenide atoms. The diffuse nature of heavier chalcogenides require relatively more tensile and less shear strain (when the monolayer is expanded in y-direction and compressed in x-direction) to attain a direct-to-indirect band gap transition. In addition, our results demonstrate that the homogeneous biaxial tensile strain of around 10% leads to semiconductor-to-metal transition in all semiconducting TMDs, while through pure shear strain this transition can only be achieved by expanding and compressing the monolayer of MTe(2) in the y- and x-directions, respectively. Our results highlight the importance of tensile and pure shear strains in tuning the electronic properties of TMDs by illustrating a substantial impact of the strain on going from MS(2) to MSe(2) to MTe(2).

The mixing mechanism during lithiation of Si negative electrode in Li-ion batteries: an ab initio molecular dynamics study.

In order to realize Si as a negative electrode material in commercial Li-ion batteries, it is important to understand the mixing mechanism of Li and Si, and stress evolution during lithiation in Si negative electrode of Li-ion batteries. Available experiments mainly provide the diffusivity of Li in Si as an averaged property, neglecting information regarding diffusivity of Si. However, if Si can diffuse as fast as Li, the stress generated during Li diffusion can be reduced. We, therefore, studied the diffusivity of Li as well as Si atoms in the Si-anode of Li-ion battery using an ab initio molecular dynamics-based methodology. The electrochemical insertion of Li into crystalline Si prompts a crystalline-to-amorphous phase transition. We considered this situation and thus examined the diffusion kinetics of Li and Si atoms in both crystalline and amorphous Si. We find that Li diffuses faster in amorphous Si as compared to crystalline Si, while Si remains relatively immobile in both cases and generates stresses during lithiation. To further understand the mixing mechanism and to relate the structure with electrochemical mixing, we analyzed the evolution of the structure during lithiation and studied the mechanism of breaking of Si-Si network by Li. We find that Li atoms break the Si rings and chains and create ephemeral structures such as stars and boomerangs, which eventually transform to Si-Si dumbbells and isolated Si atoms in the LiSi phase. Our results are found to be in agreement with the available experimental data and provide insights into the mixing mechanism of Li and Si in Si negative electrode of Li-ion batteries.

Modulating optical properties of graphene oxide: role of prominent functional groups.

To modulate the electronic and optical properties of graphene oxide via controlled deoxidation, a proper understanding of the role of the individual functional group in determining these properties is required. We, therefore, have performed ab initio density functional theory based calculations to study the electronic and optical properties of model structures of graphene oxide with different coverages and compositions. In particular, we considered various concentrations of major functional groups like epoxides, hydroxyls, and carbonyls, which mainly consititute the graphene oxide and the reduced graphene oxide. Our calculated electron energy loss spectra (EELS) demonstrate the π plasmon peak to be less sensitive, while π + σ plasmon is found to have a significant blue shift of about 1.0-3.0 eV, when the concentration of epoxy and hydroxyl functional groups in graphene oxide vary from 25% to 75%. However, the increase in carbonyl groups in the center of the graphene sheet creates holes, which lead to the red shift of the EELS. In the case of 37.5% of oxygen-to-carbon ratio, we find the π plasmon peak to be shifted by roughly 1.0 eV as compared to that of the pristine graphene. Our results agree well with the experimental findings which suggest a blue shift in the EELS of graphene oxide and an absorption feature due to a π electron transition of the carbonyl groups at a lower energy than that of epoxy and hydroxyl groups. We also show that the increase in the width of the hole created by the carbonyl groups significantly decreases the optical gap and opens the band gap, and thus, we argue that reduced graphene oxide with mostly carbonyl groups could be a useful material for developing tunable opto-electronic nanodevices.

Tunable dielectric properties of transition metal dichalcogenides.

Since discovery of graphene, layered materials have drawn considerable attention because of their possible exfoliation into single and multilayer 2D sheets. Because of strong surface effects, the properties of these materials vary drastically with the number of layers in a sheet. We have performed first-principles density functional based calculations to evaluate the electron energy loss spectrum (EELS) of bulk, monolayer, and bilayer configurations of several transition metal dichalcogenides, which include semiconducting as well as metallic compounds. Our investigation shows that the peaks in the EELS spectra move toward larger wavelengths (red shift) with the decrease in number of layers. The π plasmon peak shifts slightly by 0.5-1.0 eV, while a significant shift of around 5.5-13.0 eV is obtained for π + σ plasmon, when exfoliated from bulk to single-layer. This underscores the importance of the interlayer coupling on the loss spectra and the dielectric properties. Our results are found to be in very good agreement with the recent measurements performed by Coleman et al. (Science2011, 331, 568).

Spatially-resolved structure and electronic properties of graphene on polycrystalline Ni.

We have used in situ low-energy electron microscopy (LEEM) to correlate the atomic and electronic structure of graphene films on polycrystalline Ni with nm-scale spatial resolution. Spatially resolved electron scattering measurements show that graphene monolayers formed by carbon segregation do not support the π-plasmon of graphene, indicating strong covalent bonding to the Ni. Graphene bilayers have the Bernal stacking characteristic of graphite and show the expected plasmon loss at 6.5 eV. The experimental results, in agreement with first-principles calculations, show that the π-band structure of free-standing graphene appears only in films with a thickness of at least two layers and demonstrate the sensitivity of the plasmon loss to the electronic structure.