Experimental Study of the Exciton Gas-Liquid Transition in Coupled Quantum Wells.

We study the exciton gas-liquid transition in GaAs/AlGaAs coupled quantum wells. Below a critical temperature, T_{C}=4.8 K, and above a threshold laser power density the system undergoes a phase transition into a liquid state. We determine the density-temperature phase diagram over the temperature range 0.1-4.8 K. We find that the latent heat increases linearly with temperature at T≲1.1 K, similarly to a Bose-Einstein condensate transition, and becomes constant at 1.1≲T<4.8 K. Resonant Rayleigh scattering measurements reveal that the disorder in the sample is strongly suppressed and the diffusion coefficient sharply increases with decreasing temperature at T

Gate-tunable polarized phase of two-dimensional electrons at the LaAlO3/SrTiO3 interface.

Controlling the coupling between localized spins and itinerant electrons can lead to exotic magnetic states. A novel system featuring local magnetic moments and extended 2D electrons is the interface between LaAlO3 and SrTiO3. The magnetism of the interface, however, was observed to be insensitive to the presence of these electrons and is believed to arise solely from extrinsic sources like oxygen vacancies and strain. Here we show the existence of unconventional electronic phases in the LaAlO3/SrTiO3 system pointing to an underlying tunable coupling between itinerant electrons and localized moments. Using anisotropic magnetoresistance and anomalous Hall effect measurements in a unique in-plane configuration, we identify two distinct phases in the space of carrier density and magnetic field. At high densities and fields, the electronic system is strongly polarized and shows a response, which is highly anisotropic along the crystalline directions. Surprisingly, below a density-dependent critical field, the polarization and anisotropy vanish whereas the resistivity sharply rises. The unprecedented vanishing of the easy axes below a critical field is in sharp contrast with other coupled magnetic systems and indicates strong coupling with the moments that depends on the symmetry of the itinerant electrons. The observed interplay between the two phases indicates the nature of magnetism at the LaAlO3/SrTiO3 interface as both having an intrinsic origin and being tunable.

A universal critical density underlying the physics of electrons at the LaAlO3/SrTiO3 interface.

The two-dimensional electron system at the interface between the insulating oxides LaAlO(3) and SrTiO(3) exhibits ferromagnetism, superconductivity and a range of unique magnetotransport properties. An open experimental challenge is to identify, out of the multitudinous energy bands predicted to exist at the interface, the key ingredients underlying its emergent transport phenomena. Here we show, using magnetotransport measurements, that a universal Lifshitz transition between d orbitals of different symmetries lies at the core of the observed phenomena. We find that LaAlO(3)/SrTiO(3) systems generically switch from one- to two-carrier transport at a universal carrier density, which is independent of the LaAlO(3) thickness and electron mobility. Interestingly, the maximum superconducting critical temperature occurs also at the Lifshitz density, indicating a possible connection between the two phenomena. A simple band model, allowing for spin-orbit coupling at the atomic level, connects the observed transition to a variety of previously reported properties. Our results demonstrate that the fascinating behaviour observed so far in these oxides follows from a small but fundamental set of bands.

Enhanced sensitivity in detection of Kerr rotation by double modulation and time averaging based on Allan variance.

Experiments in spintronics necessarily involve the detection of spin polarization. The sensitivity of this detection becomes an important factor to consider when extending the low temperature studies on semiconductor spintronic devices to room temperature, where the spin signal is weaker. In pump-probe experiments, which optically inject and detect spins, the sensitivity is often improved by using a photoelastic modulator (PEM) for lock-in detection. However, spurious signals can arise if diode lasers are used as optical sources in such experiments, along with a PEM. In this work, we eliminated the spurious electromagnetic coupling of the PEM onto the probe diode laser, by the double modulation technique. We also developed a test for spurious modulated interference in the pump-probe signal, due to the PEM. Besides, an order of magnitude enhancement in the sensitivity of detection of spin polarization by Kerr rotation, to 3x10(-8) rad was obtained by using the concept of Allan variance to optimally average the time series data over a period of 416 s. With these improvements, we are able to experimentally demonstrate at room temperature, photoinduced steady-state spin polarization in bulk GaAs. Thus, the advances reported here facilitate the use of diode lasers with a PEM for sensitive pump-probe experiments. They also constitute a step toward detection of spin-injection in Si at room temperature.

Simplified theory of optical nonlinearities in spin-polarized semiconductors.

The spin degree of freedom is largely disregarded in existing theories of the density-dependent optical properties of an interacting electron-hole plasma in quasiequilibrium. Here, we extended the pair equation, which is applicable to a bulk semiconductor at elevated temperatures, to calculate optical nonlinearities due to a spin-polarized plasma. We obtained agreement with recent circular dichroism data in laser-excited GaAs by using the plasma density alone as the fitting parameter. The simplicity of our theory, based on the analytical pair-equation formula, makes it ideal for conveniently modelling absorption in a carrier spin-polarized semiconductor.