Enhancing the light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes with photonic crystal structures.

In this paper, AlInN nanowire ultraviolet light-emitting diodes (LEDs) with emission at ∼299 nm have been successfully demonstrated. We have further studied the light extraction properties of these nanowire LEDs using photonic crystal structures with square and hexagonal lattices of nanowires. The light extraction efficiency (LEE) of the periodic nanowire LED arrays was found to be significantly increased as compared to random nanowire LEDs. The LEEs reach ∼ 56%, and ∼ 63% for the square and hexagonal photonic crystal-based nanowire structures, respectively. Moreover, highly transverse-magnetic polarized emission was observed with dominant vertical light emission for the AlInN nanowire ultraviolet LEDs.

Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure.

This paper reports the illustration of electron blocking layer (EBL)-free AlGaN light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) wavelength at ∼270nm. In this work, we demonstrated that the integration of an optimized thin undoped AlGaN strip layer in the middle of the last quantum barrier (LQB) could generate enough conduction band barrier height for the effectively reduced electron overflow into the p-GaN region. Moreover, the hole injection into the multi-quantum-well active region is significantly increased due to a large hole accumulation at the interface of the AlGaN strip and the LQB. As a result, the internal quantum efficiency and output power of the proposed LED structure has been enhanced tremendously compared to that of the conventional p-type EBL-based LED structure.