The osteogenic effects of sponges synthesized with biomaterials and nano-hydroxyapatite.

Artificial bone substitutes have been developed using various biomaterials for use in medicine. Silk fibroin (SF) displays excellent mechanical properties and cell compatibility. Nonetheless, the mechanical properties of silk fibroin scaffolds used in artificial bone substitutes are weaker than those of natural bone, and silk fibroin is deficient as an osteogenic agent. This limits their effectiveness in bone tissue engineering. We added nano-hydroxyapatite (nHAp) particles to an existing cell-based artificial bone substitute with a silk fibroin scaffold, which will improve its mechanical properties and osteogenic efficacy, leading to significant bone regeneration. The mechanical characters of silk fibroin modifying with nHAp were measured by Atomic Force Microscopy Analysis, dispersive x-ray spectroscopy, Porosity measurement, and Microcomputed Tomography. The proliferation and toxicity of a fibroin/dextran/collagen sponge (FDS) containing nHAp were evaluatedin vitro, and its osteogenic efficacy was evaluated using nude mouse and rabbit radius defect models. The defect area was repaired and showed callus formation of new bone in the rabbit radius defect models of the nHAp-FDS-treated group, whereas the defect area was unchanged in the FDS-treated group. The nHAp-FDS manufactured in this study showed significant bone regeneration owing to the synergistic effects of the components, such as those due to the broad range of pore sizes in the sponge and protein adsorbability of the nHAp, which could be suggested as a better supportive material for bone tissue engineering.

Analysis of Thermal Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Using Micro-Raman Spectroscopy.

We investigated the heat dissipation in heterostructure field-effect transistors (HFETs) using microRaman measurement of the temperature in active AIGaN/GaN. By varying the gate structure, the heat dissipation through the gate was clearly revealed. The temperature increased to 120 °C at the flat gate device although the inserted gate increased to only 37 °C. Our results showed that the inserted gate structure reduced the self-heating effect by three times compared to the flat gate structure. Temperature mapping using micro-Raman measurement confirmed that the temperature of the near gate area was lower than that of the near drain area. This indicated that the inserted gate electrode structure effectively prohibited self-heating effects.