Optical frequency averaging of light.

The use of averaging has long been known to reduce noise in statistically independent systems that exhibit similar levels of stochastic fluctuation. This concept of averaging is general and applies to a wide variety of physical and man-made phenomena such as particle motion, shot noise, atomic clock stability, measurement uncertainty reduction, and methods of signal processing. Despite its prevalence in use for reducing statistical uncertainty, such averaging techniques so far remain comparatively undeveloped for application to light. We demonstrate here a method for averaging the frequency uncertainty of identical laser systems as a means to narrow the spectral linewidth of the resulting radiation. We experimentally achieve a reduction of frequency fluctuations from 40 Hz to 28 Hz by averaging two separate laser systems each locked to a fiber resonator. Only a single seed laser is necessary here as acousto-optic modulation is used to enable independent control of the second path. This technique of frequency averaging provides an effective solution to overcome the linewidth constraints of a single laser alone, particularly when limited by fundamental noise sources such as thermal noise, irrespective of the spectral shape of noise.

Extremely large area (88 mm × 88 mm) superconducting integrated circuit (ELASIC).

Superconducting integrated circuit is a promising "beyond-CMOS" device technology enables speed-of-light, nearly lossless communications to advance cryogenic (4 K or lower) computing. However, the lack of large-area superconducting IC has hindered the development of scalable practical systems. Herein, we describe a novel approach to interconnect 16 high-resolution deep UV (DUV EX4, 248 nm lithography) full reticle circuits to fabricate an extremely large (88 mm × 88 mm) area superconducting integrated circuit (ELASIC). The fabrication process starts by interconnecting four high-resolution DUV EX4 (22 mm × 22 mm) full reticles using a single large-field (44 mm × 44 mm) I-line (365 nm lithography) reticle, followed by I-line reticle stitching at the boundaries of 44 mm × 44 mm fields to fabricate the complete ELASIC field (88 mm × 88 mm). The ELASIC demonstrated a 2X-12X reduction in circuit features and maintained high-stitched line superconducting critical currents. We examined quantum flux parametron circuits to demonstrate the viability of common active components used for data buffering and transmission. Considering that no stitching requirement for high-resolution EX4 DUV reticles is employed, the present fabrication process has the potential to advance the scaling of superconducting qubits and other tri-layer junction-based devices.

Wafer-scale heterogeneous integration of thin film lithium niobate on silicon-nitride photonic integrated circuits with low loss bonding interfaces.

Silicon nitride (Si3N4) is a versatile waveguide material platform for CMOS foundry-based photonic integrated circuits (PICs) with low loss and high-power handling. The range of applications enabled by this platform is significantly expanded with the addition of a material with large electro-optic and nonlinear coefficients such as lithium niobate. This work examines the heterogeneous integration of thin-film lithium-niobate (TFLN) on silicon-nitride PICs. Bonding approaches are evaluated based on the interface used (SiO2, Al2O3 and direct) to form hybrid waveguide structures. We demonstrate low losses in chip-scale bonded ring resonators of 0.4 dB/cm (intrinsic Q = 8.19 × 105). In addition, we are able to scale the process to demonstrate bonding of full 100-mm TFLN wafers to 200-mm Si3N4 PIC wafers with high layer transfer yield. This will enable future integration with foundry processing and process design kits (PDKs) for applications such as integrated microwave photonics and quantum photonics.

Cooling of an integrated Brillouin laser below the thermal limit.

Photonically integrated resonators are promising as a platform for enabling ultranarrow linewidth lasers in a compact form factor. Owing to their small size, these integrated resonators suffer from thermal noise that limits the frequency stability of the optical mode to ∼100 kHz. Here, we demonstrate an integrated stimulated Brillouin scattering (SBS) laser based on a large mode-volume annulus resonator that realizes an ultranarrow thermal-noise-limited linewidth of 270 Hz. In practice, yet narrower linewidths are required before integrated lasers can be truly useful for applications such as optical atomic clocks, quantum computing, gravitational wave detection, and precision spectroscopy. To this end, we employ a thermorefractive noise suppression technique utilizing an auxiliary laser to reduce our SBS laser linewidth to 70 Hz. This demonstration showcases the possibility of stabilizing the thermal motion of even the narrowest linewidth chip lasers to below 100 Hz, thereby opening the door to making integrated microresonators practical for the most demanding future scientific endeavors.

Operation of an optical atomic clock with a Brillouin laser subsystem.

Microwave atomic clocks have traditionally served as the 'gold standard' for precision measurements of time and frequency. However, over the past decade, optical atomic clocks1-6 have surpassed the precision of their microwave counterparts by two orders of magnitude or more. Extant optical clocks occupy volumes of more than one cubic metre, and it is a substantial challenge to enable these clocks to operate in field environments, which requires the ruggedization and miniaturization of the atomic reference and clock laser along with their supporting lasers and electronics4,7,8,9. In terms of the clock laser, prior laboratory demonstrations of optical clocks have relied on the exceptional performance gained through stabilization using bulk cavities, which unfortunately necessitates the use of vacuum and also renders the laser susceptible to vibration-induced noise. Here, using a stimulated Brillouin scattering laser subsystem that has a reduced cavity volume and operates without vacuum, we demonstrate a promising component of a portable optical atomic clock architecture. We interrogate a 88Sr+ ion with our stimulated Brillouin scattering laser and achieve a clock exhibiting short-term stability of 3.9 × 10-14 over one second-an improvement of an order of magnitude over state-of-the-art microwave clocks. This performance increase within a potentially portable system presents a compelling avenue for substantially improving existing technology, such as the global positioning system, and also for enabling the exploration of topics such as geodetic measurements of the Earth, searches for dark matter and investigations into possible long-term variations of fundamental physics constants10-12.

Demonstration of a highly stable 10 GHz optical frequency comb with low timing jitter from a SCOWA-based harmonically mode-locked nested cavity laser.

An optical frequency comb with mode spacing of 10 GHz operating in the c-band is produced from a harmonically mode-locked laser using a slab-coupled optical waveguide amplifier device with a fiber-coupled external cavity. An intracavity Fabry-Perot etalon serves as a high finesse optical filter for supermode suppression and as the reference for cavity length stabilization using a multi-combline Pound-Drever-Hall setup. The Allan deviation of a single optical combline near 193.4 THz is measured via a heterodyne beat with a cavity stabilized cw laser and reaches a minimum fractional frequency deviation of 3×10-13 at τ=30 ms. In addition, the phase noise of the photodetected pulsed output of the laser shows a timing jitter of <23 fs integrated from 1 Hz to the Nyquist frequency.

Optical unmasking of spectrally overlapping RF signals.

When two signals having overlapping frequency content are received at the same time, they interfere to obstruct detection of the information carried by each individual signal. We introduce here a new nonlinear optoelectronic filtering technique that enables the ability to individually detect two concurrent and spectrally overlapping signals, even when the amplitude ratio between the signals is as high as 100,000. We demonstrate our system for application in steganography where we unveil the information carried by a hidden desired RF signal, while a dominant interferer signal is intentionally transmitted nearby and at the same frequency. Our signal recovery technique, which operates assuming no a priori knowledge of either signal, presents an additional pathway that can be used to control how information can be processed and communicated.

Localized in situ cladding annealing for post-fabrication trimming of silicon photonic integrated circuits.

We report the use of localized annealing via in situ heaters to induce a semi-permanent change in the refractive index of the cladding in ring resonator filters. When compared to other methods for post-fabrication trimming, this method has the advantage that no additional equipment, other than a supply of electrical power, is necessary to cause the index change. Two cladding materials were used: hydrogen silsesquioxane (HSQ) for samples that were externally annealed, and PECVD oxide for samples that were annealed with in situ heaters. The resonant wavelengths could be adjusted by as much as 3.0 nm and 1.7 nm for the HSQ and PECVD cladded filters, respectively. The trimming of a 5 channel, single ring filter bank, and a single, double ring filter is demonstrated.

A nonlinear optoelectronic filter for electronic signal processing.

The conversion of electrical signals into modulated optical waves and back into electrical signals provides the capacity for low-loss radio-frequency (RF) signal transfer over optical fiber. Here, we show that the unique properties of this microwave-photonic link also enable the manipulation of RF signals beyond what is possible in conventional systems. We achieve these capabilities by realizing a novel nonlinear filter, which acts to suppress a stronger RF signal in the presence of a weaker signal independent of their separation in frequency. Using this filter, we demonstrate a relative suppression of 56 dB for a stronger signal having a 1-GHz center frequency, uncovering the presence of otherwise undetectable weaker signals located as close as 3.5 Hz away. The capabilities of the optoelectronic filter break the conventional limits of signal detection, opening up new possibilities for radar and communication systems, and for the field of precision frequency metrology.

Low-noise RF-amplifier-free slab-coupled optical waveguide coupled optoelectronic oscillators: physics and operation.

We demonstrate a 10-GHz RF-amplifier-free slab-coupled optical waveguide coupled optoelectronic oscillator (SCOW-COEO) system operating with low phase-noise (<-115 dBc/Hz at 1 kHz offset) and large sidemode suppression (>70 dB measurement-limited). The optical pulses generated by the SCOW-COEO exhibit 26.8-ps pulse width (post compression) with a corresponding spectral bandwidth of 0.25 nm (1.8X transform-limited). We also investigate the mechanisms that limit the performance of the COEO. Our measurements indicate that degradation in the quality factor (Q) of the optical cavity significantly impacts COEO phase-noise through increases in the optical amplifier relative intensity noise (RIN).

Amplifier-free slab-coupled optical waveguide optoelectronic oscillator systems.

We demonstrate a free-running 3-GHz slab-coupled optical waveguide (SCOW) optoelectronic oscillator (OEO) with low phase-noise (<-120 dBc/Hz at 1-kHz offset) and ultra-low sidemode spurs. These sidemodes are indistinguishable from noise on a spectrum analyzer measurement (>88 dB down from carrier). The SCOW-OEO uses high-power low-noise SCOW components in a single-loop cavity employing 1.5-km delay. The noise properties of our SCOW external-cavity laser (SCOWECL) and SCOW photodiode (SCOWPD) are characterized and shown to be suitable for generation of high spectral purity microwave tones. Through comparisons made with SCOW-OEO topologies employing amplification, we observe the sidemode levels to be degraded by any amplifiers (optical or RF) introduced within the OEO cavity.

Uni-traveling-carrier variable confinement waveguide photodiodes.

Uni-traveling-carrier waveguide photodiodes (PDs) with a variable optical confinement mode size transformer are demonstrated. The optical mode is large at the input for minimal front-end saturation and the mode transforms as the light propagates so that the absorption profile is optimized for both high-power and high-speed performance. Two differently designed PDs are presented. PD A demonstrates a 3-dB bandwidth of 12.6 GHz, and saturation currents of 40 mA at 1 GHz and 34 mA at 10 GHz. PD B demonstrates a 3-dB bandwidth of 2.5 GHz, a saturation current greater than 100 mA at 1 GHz, a peak RF output power of + 19 dBm, and a third-order output intercept point of 29.1 dBm at a photocurrent of 60 mA.

Low-noise, low repetition rate, semiconductor-based mode-locked laser source suitable for high bandwidth photonic analog-digital conversion.

A semiconductor-based mode-locked laser source with low repetition rate, ultralow amplitude, and phase noise is introduced. A harmonically mode-locked semiconductor-based ring laser is time demultiplexed at a frequency equal to the cavity fundamental frequency (80MHz), resulting in a low repetition rate pulse train having ultralow amplitude and phase noise, properties usually attributed to multigigahertz repetition rate lasers. The effect of time demultiplexing on the phase noise of harmonically mode-locked lasers is analyzed and experimentally verified.

Continuous-wave two-photon absorption in a Watt-class semiconductor optical amplifier.

We report the observation of photoluminescence produced by the recombination of free carriers generated via continuous-wave (CW) two-photon absorption (TPA) in a packaged, low-confinement (Gamma approximately 0.5%) InGaAsP/InP quantum-well slab-coupled optical waveguide amplifier (SCOWA) having a saturation output power of 0.8 W and 1/e-mode-field diameters of 5 x 7 microm. Photoluminescence power measured at the wavelength corresponding to the bandgap wavelength of the SCOWA's InGaAsP waveguide (lambda(G) approximately 1040 nm) exhibits a quadratic dependence on the amplifier's 1540-nm output power. Comparison between measured and simulated CW gain saturation data reveals that the combination of TPA and TPA-generated free-carrier absorption (FCA) limits the CW output intensity of high-power, low-confinement semiconductor optical amplifiers and semiconductor lasers.

250 mW, 1.5 microm monolithic passively mode-locked slab-coupled optical waveguide laser.

We report the demonstration of a 1.5 microm InGaAsP mode-locked slab-coupled optical waveguide laser (SCOWL) producing 10 ps pulses with energies of 58 pJ and average output powers of 250 mW at a repetition rate of 4.29 GHz. To the best of our knowledge, this is the first passively mode-locked slab-coupled optical waveguide laser. The large mode and low confinement factor of the SCOWL architecture allows the realization of monolithic mode-locked lasers with high output power and pulse energy. The laser output is nearly diffraction limited with M2 values less than 1.2 in both directions.