RESUMO
The pre-clinical validation of cell therapies requires monitoring the biodistribution of transplanted cells in tissues of host organisms. Real-time detection of these cells in the circulatory system and identification of their aggregation state is a crucial piece of information, but necessitates deep penetration and fast imaging with high selectivity, subcellular resolution, and high throughput. In this study, multiphoton-based in-flow detection of human stem cells in whole, unfiltered blood is demonstrated in a microfluidic channel. The approach relies on a multiphoton microscope with diffractive scanning in the direction perpendicular to the flow via a rapidly wavelength-swept laser. Stem cells are labeled with metal oxide harmonic nanoparticles. Thanks to their strong and quasi-instantaneous second harmonic generation (SHG), an imaging rate in excess of 10 000 frames per second is achieved with pixel dwell times of 1 ns, a duration shorter than typical fluorescence lifetimes yet compatible with SHG. Through automated cell identification and segmentation, morphological features of each individual detected event are extracted and cell aggregates are distinguished from isolated cells. This combination of high-speed multiphoton microscopy and high-sensitivity SHG nanoparticle labeling in turbid media promises the detection of rare cells in the bloodstream for assessing novel cell-based therapies.
RESUMO
Carrier recombination and scattering at the semiconductor boundaries can substantially limit the device efficiency. However, surface and interface recombination is generally neglected in the nitride-based devices. Here, we study carrier recombination and diffusivity in AlGaN/GaN/sapphire heterointerfaces with AlGaN barriers of different quality. We employ the light induced transient grating and time-resolved photoluminescence spectroscopy techniques to extract carrier lifetime in different depths of the GaN buffer as well as in the AlGaN barrier, and to evaluate the carrier diffusion coefficient in the buffer. Moreover, we assess interface recombination velocity, Shockley-Read-Hall and radiative recombination rates. We reveal the adverse barrier influence on carrier dynamics in the underlying buffer: AlGaN barrier accelerates the nonradiative carrier recombination in the GaN buffer. The interface recombination velocity in the GaN buffer increases with decreasing AlGaN barrier quality, and the dominating recombination mechanism switches from Shockley-Read-Hall to interface recombination. These phenomena are governed by a cumulative effect of various interface-deteriorating barrier defects. Meanwhile, the carrier diffusivity in the GaN buffer is not affected by the AlGaN barrier. We conclude that barrier-accelerated interface recombination can become a major carrier loss mechanism in AlGaN/GaN interface, and may substantially limit the efficiency in nitride-based UV LEDs.
RESUMO
The influence of carrier localization on photoluminescence efficiency droop and stimulated emission is studied in AlGaN multiple quantum wells with different strength of carrier localization. We observe that carrier delocalization at low temperatures predominantly enhances the nonradiative recombination and causes the droop, while the main effect of the delocalization at elevated temperatures is enhancement of PL efficiency due to increasing contribution of bimolecular recombination of free carriers. When the carrier thermal energy exceeds the dispersion of the potential fluctuations causing the carrier localization, the droop is caused by stimulated carrier recombination.
RESUMO
The photoluminescence droop effect, i.e., the decrease in emission efficiency with increasing excitation intensity, is observed and studied in GaN epilayers with different carrier lifetimes. Spontaneous and stimulated emissions have been studied in the front-face and edge emission configurations. The onset of stimulated recombination occurs simultaneously with the droop onset in the front-face configuration and might be considered as an origin of the droop effect in GaN epilayers.
