RESUMO
Monocrystalline bulk silicon with doped impurities has been the widely preferred piezoresistive material for the last few decades to realize micro-electromechanical system (MEMS) sensors. However, there has been a growing interest among researchers in the recent past to explore other piezoresistive materials with varied advantages in order to realize ultra-miniature high-sensitivity sensors for area-constrained applications. Of the various alternative piezoresistive materials, silicon nanowires (SiNWs) are an attractive choice due to their benefits of nanometre range dimensions, giant piezoresistive coefficients, and compatibility with the integrated circuit fabrication processes. This review article elucidates the fundamentals of piezoresistance and its existence in various materials, including silicon. It comprehends the piezoresistance effect in SiNWs based on two different biasing techniques, viz., (i) ungated and (ii) gated SiNWs. In addition, it presents the application of piezoresistive SiNWs in MEMS-based pressure sensors, acceleration sensors, flow sensors, resonators, and strain gauges.