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1.
Nano Lett ; 6(10): 2184-90, 2006 Oct.
Artigo em Inglês | MEDLINE | ID: mdl-17034080

RESUMO

We present transport measurements of single-molecule junctions bridged by a molecule with three benzene rings connected by two double bonds and with thiol end-groups that allow chemical binding to gold electrodes. The I-V curves show switching behavior between two distinct states. By statistical analysis of the switching events, we show that a 300 meV mode mediates the transition between the two states. We propose that breaking and reformation of a S-H bond in the contact zone between molecule and electrode explains the observed bistability.


Assuntos
Benzeno/química , Eletroquímica/métodos , Microeletrodos , Modelos Químicos , Modelos Moleculares , Nanoestruturas/química , Semicondutores , Simulação por Computador , Impedância Elétrica , Transporte de Elétrons , Cinética
2.
Nano Lett ; 6(5): 937-41, 2006 May.
Artigo em Inglês | MEDLINE | ID: mdl-16683829

RESUMO

We report fabrication as well as proof-of-concept experiments of a noninvasive sensor of weak nanoscale electric fields. The sensor is a single electron transistor (SET) placed at the tip of a noncontact atomic force microscope (AFM). This is a general technology to make any nanometer-sized lithography pattern at edges or tips of a cantilever. The height control of the AFM allows the SET to hover a few nanometers above the substrate, improving both the electric field sensitivity and lateral resolution of the electrometer. Our AFM-SET sensor is prepared by a scalable technology. It means that the probe can be routinely fabricated and replaced, if broken.


Assuntos
Elétrons , Microscopia de Força Atômica/instrumentação , Transistores Eletrônicos
3.
Faraday Discuss ; 131: 337-45; discussion 393-402, 2006.
Artigo em Inglês | MEDLINE | ID: mdl-16512381

RESUMO

We report the first measurements of single C60 molecules trapped in three terminal devices prepared by quench condensation of a gold source and drain electrode on top of an aluminium gate electrode covered with a thin oxide. Our experimental platform allows source and drain electrodes to be fabricated on the gate oxide at low temperatures and high vacuum. In a subsequent step, single molecules are evaporated in situ onto the surface and caught in the gap between a source and a drain electrode. This fabrication method ensures a clean contact between the molecule and the gold electrode due to the unbroken vacuum. Our measurements reveal a strong interaction between the C60 molecule and the gold electrodes resulting in the absence of the Coulomb blockade effects observed by others. In addition, we observe an insignificant gate dependence but a pronounced negative differential resistance (NDR) at bias voltages from 20-50 meV. The position of the peak in the NDR shows a pronounced and universal temperature dependence for all six devices included in the study. The results are related to previous measurements in such devices which focus on the detailed nature of the contact region between the molecule the gold electrode.

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