The physics of epitaxial graphene on SiC(0001).

Various physical properties of epitaxial graphene grown on SiC(0001) are studied. First, the electronic transport in epitaxial bilayer graphene on SiC(0001) and quasi-free-standing bilayer graphene on SiC(0001) is investigated. The dependences of the resistance and the polarity of the Hall resistance at zero gate voltage on the top-gate voltage show that the carrier types are electron and hole, respectively. The mobility evaluated at various carrier densities indicates that the quasi-free-standing bilayer graphene shows higher mobility than the epitaxial bilayer graphene when they are compared at the same carrier density. The difference in mobility is thought to come from the domain size of the graphene sheet formed. To clarify a guiding principle for controlling graphene quality, the mechanism of epitaxial graphene growth is also studied theoretically. It is found that a new graphene sheet grows from the interface between the old graphene sheets and the SiC substrate. Further studies on the energetics reveal the importance of the role of the step on the SiC surface. A first-principles calculation unequivocally shows that the C prefers to release from the step edge and to aggregate as graphene nuclei along the step edge rather than be left on the terrace. It is also shown that the edges of the existing graphene more preferentially absorb the isolated C atoms. For some annealing conditions, experiments can also provide graphene islands on SiC(0001) surfaces. The atomic structures are studied theoretically together with their growth mechanism. The proposed embedded island structures actually act as a graphene island electronically, and those with zigzag edges have a magnetoelectric effect. Finally, the thermoelectric properties of graphene are theoretically examined. The results indicate that reducing the carrier scattering suppresses the thermoelectric power and enhances the thermoelectric figure of merit. The fine control of the Fermi energy position is thought to be key for the practical use of graphene as a thermoelectric material, which could be achieved with epitaxial graphene. All of these results reveal that epitaxial graphene is physically interesting.

Local conductance measurements of double-layer graphene on SiC substrate.

The microscopic structural and electrical properties of few-layer graphene grown on an SiC substrate were characterized by low-energy electron microscopy, transmission electron microscopy and scanning probe microscopy measurements of local conductance. The double-layer graphene sheet was confirmed to be continuous across the atomic steps on the buried SiC substrate surface, and the measured local conductance was clearly modified in the vicinity of the steps. The conductance decreased (slightly increased) at the lower (upper) side of the steps, suggesting deformation-induced strain is the origin of the conductance modification. From the contact force dependence of the conductance images, the effective contact areas for both nanogap-probe and point-probe measurements were estimated.

In-plane conductance measurement of graphene nanoislands using an integrated nanogap probe.

The in-plane conductance of individual graphene nanoislands thermally grown on SiC substrate was successfully measured using an integrated nanogap probe without lithographic patterning. A Pt nanogap electrode with a 30 nm gap integrated on the cantilever tip of a scanning probe microscope enables us to image a conductance map of graphene nanoislands with nanometer resolution. Single- and double-layer graphene islands are clearly distinguished in the conductance image. The size dependence of the conductance of the nanoislands suggests that the band gap opening is due to the lateral confinement effect.

Impact of space-energy correlation on variable range hopping in a transistor.

Hopping conduction in transistors, i.e., under a transverse electric field, is addressed using percolation theory with a space-energy correlation in the density of states of the impurity band. The computation of the percolation threshold over an extended range of correlation parameters enables us to derive a formula, which, while giving the classical results in the low field limit, describes the emergence of a specific variable range hopping in the high field case. An application of this formula to experimentally extract the localization radius is also proposed.

Photorefractive multiple quantum wells at 1064 nm.

We have fabricated photorefractive InGaAs/GaAs multiple quantum wells that are sensitive at wavelengths near 1.06 mum for what is believed to be the first time. We have measured four-wave-mixing diffraction efficiency, using a Nd:YAG laser. A maximum diffraction efficiency of 7 x 10(-4) and a cutoff grating period of ~2 mum are obtained.

Resonant photorefractive effect in InGaAs/GaAs multiple quantum wells.

Semi-insulating InGaAs/GaAs multiple quantum wells are fabricated by metal-organic vapor-phase epitaxy and proton implantation. Two-wave mixing gain and four-wave mixing diffraction efficiency are measured at wavelengths of 0.91-0.94microm in the Franz-Keldysh geometry. We observe a large photorefractive effect caused by the excitonic electro-optic effect. The maximum diffraction efficiency reaches ~1.5x10(-4) .