Carrier density independent scattering rate in SrTiO3-based electron liquids.

We examine the carrier density dependence of the scattering rate in two- and three-dimensional electron liquids in SrTiO3 in the regime where it scales with T(n) (T is the temperature and n ≤ 2) in the cases when it is varied by electrostatic control and chemical doping, respectively. It is shown that the scattering rate is independent of the carrier density. This is contrary to the expectations from Landau Fermi liquid theory, where the scattering rate scales inversely with the Fermi energy (EF). We discuss that the behavior is very similar to systems traditionally identified as non-Fermi liquids (n < 2). This includes the cuprates and other transition metal oxide perovskites, where strikingly similar density-independent scattering rates have been observed. The results indicate that the applicability of Fermi liquid theory should be questioned for a much broader range of correlated materials and point to the need for a unified theory.

Tailoring resistive switching in Pt/SrTiO3 junctions by stoichiometry control.

Resistive switching effects in transition metal oxide-based devices offer new opportunities for information storage and computing technologies. Although it is known that resistive switching is a defect-driven phenomenon, the precise mechanisms are still poorly understood owing to the difficulty of systematically controlling specific point defects. As a result, obtaining reliable and reproducible devices remains a major challenge for this technology. Here, we demonstrate control of resistive switching based on intentional manipulation of native point defects. Oxide molecular beam epitaxy is used to systematically investigate the effect of Ti/Sr stoichiometry on resistive switching in high-quality Pt/SrTiO3 junctions. We demonstrate resistive switching with improved state retention through the introduction of Ti- and Sr-excess into the near-interface region. More broadly, the results demonstrate the utility of high quality metal/oxide interfaces and explicit control over structural defects to improve control, uniformity, and reproducibility of resistive switching processes. Unintentional interfacial contamination layers, which are present if Schottky contacts are processed at low temperature, can easily dominate the resistive switching characteristics and complicate the interpretation if nonstoichiometry is also present.

Element specific monolayer depth profiling.

The electronic phase behavior and functionality of interfaces and surfaces in complex materials are strongly correlated to chemical composition profiles, stoichiometry and intermixing. Here a novel analysis scheme for resonant X-ray reflectivity maps is introduced to determine such profiles, which is element specific and non-destructive, and which exhibits atomic-layer resolution and a probing depth of hundreds of nanometers.

Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique.

There has been much interest in the injection and detection of spin-polarized carriers in semiconductors for the purposes of developing novel spintronic devices. Here we report the electrical injection and detection of spin-polarized carriers into Nb-doped strontium titanate single crystals and La-doped strontium titanate epitaxial thin films using MgO tunnel barriers and the three-terminal Hanle technique. Spin lifetimes of up to ~100 ps are measured at room temperature and vary little as the temperature is decreased to low temperatures. However, the mobility of the strontium titanate has a strong temperature dependence. This behaviour and the carrier doping dependence of the spin lifetime suggest that the spin lifetime is limited by spin-dependent scattering at the MgO/strontium titanate interfaces, perhaps related to the formation of doping induced Ti(3+). Our results reveal a severe limitation of the three-terminal Hanle technique for measuring spin lifetimes within the interior of the subject material.

Tailoring the pore alignment for rapid ion transport in microporous carbons.

The power density and charge-discharge time of electrical double layer capacitors are largely determined by how fast the electrolyte ions can travel within the carbon electrode particles. Our systematic studies using zeolite-templated carbons show that an enhancement in ion transport rate by more than 2 orders of magnitude is possible by minimizing the micropore tortuosity. Very uniform carbon deposition was achieved using a well-controlled process involving the decomposition of acetylene precursor at a reduced pressure of 10 Torr and under a constant flow rate of 100 sccm. Selected carbon samples with well-aligned, straight micropores demonstrate high specific capacitance of up to 300 F/g and outstanding frequency response of up to 10 Hz for 250 microm thick electrodes, indicating an attractive combination of high specific energy and high specific power in electrical double layer capacitors. Such properties are critical for many peak-power hungry applications, such as the leveling of subsecond disturbances in power lines. Our findings provide guidance for the optimal design of porous carbons with greatly improved power storage characteristics.