Assessment of a 16-Channel Ambulatory Dry Electrode EEG for Remote Monitoring.

Ambulatory EEGs began emerging in the healthcare industry over the years, setting a new norm for long-term monitoring services. The present devices in the market are neither meant for remote monitoring due to their technical complexity nor for meeting clinical setting needs in epilepsy patient monitoring. In this paper, we propose an ambulatory EEG device, OptiEEG, that has low setup complexity, for the remote EEG monitoring of epilepsy patients. OptiEEG's signal quality was compared with a gold standard clinical device, Natus. The experiment between OptiEEG and Natus included three different tests: eye open/close (EOC); hyperventilation (HV); and photic stimulation (PS). Statistical and wavelet analysis of retrieved data were presented when evaluating the performance of OptiEEG. The SNR and PSNR of OptiEEG were slightly lower than Natus, but within an acceptable bound. The standard deviations of MSE for both devices were almost in a similar range for the three tests. The frequency band energy analysis is consistent between the two devices. A rhythmic slowdown of theta and delta was observed in HV, whereas photic driving was observed during PS in both devices. The results validated the performance of OptiEEG as an acceptable EEG device for remote monitoring away from clinical environments.

Active inductor based fully integrated CMOS transmit/ receive switch for 2.4 GHz RF transceiver.

Modern Radio Frequency (RF) transceivers cannot be imagined without high-performance (Transmit/Receive) T/R switch. Available T/R switches suffer mainly due to the lack of good trade-off among the performance parameters, where high isolation and low insertion loss are very essential. In this study, a T/R switch with high isolation and low insertion loss performance has been designed by using Silterra 0.13µm CMOS process for 2.4GHz ISM band RF transceivers. Transistor aspect ratio optimization, proper gate bias resistance, resistive body floating and active inductor-based parallel resonance techniques have been implemented to achieve better trade-off. The proposed T/R switch exhibits 0.85dB insertion loss and 45.17dB isolation in both transmit and receive modes. Moreover, it shows very competitive values of power handling capability (P1dB) and linearity (IIP3) which are 11.35dBm and 19.60dBm, respectively. Due to avoiding bulky inductor and capacitor, the proposed active inductor-based T/R switch became highly compact occupying only 0.003mm2 of silicon space; which will further trim down the total cost of the transceiver. Therefore, the proposed active inductor-based T/R switch in 0.13µm CMOS process will be highly useful for the electronic industries where low-power, high-performance and compactness of devices are the crucial concerns.